Composition and method for polishing memory hard disks exhibiting reduced edge roll-off
    3.
    发明授权
    Composition and method for polishing memory hard disks exhibiting reduced edge roll-off 有权
    用于抛光显示减少边缘滚降的存储硬盘的组合物和方法

    公开(公告)号:US09481811B2

    公开(公告)日:2016-11-01

    申请号:US14627081

    申请日:2015-02-20

    摘要: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

    摘要翻译: 本发明提供一种化学机械抛光组合物,其包含(a)选自湿法二氧化硅,α氧化铝,热解氧化铝,二氧化铈,氧化锆,二氧化钛及其组合的研磨剂,(b)氧化催化剂,(c) 过渡金属硫酸盐,(d)络合剂,(e)过氧化氢,(f)非离子表面活性剂,(g)阴离子表面活性剂和(h)水。 抛光组合物的pH为约1至约5,并且抛光组合物基本上不含过氧化二硫酸盐。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底,特别是镍 - 磷基底进行化学机械抛光的方法,相对于基底移动抛光垫和抛光组合物, 并研磨基底的至少一部分以抛光基底。

    CMP composition and method for polishing rigid disks

    公开(公告)号:US10315285B2

    公开(公告)日:2019-06-11

    申请号:US15091275

    申请日:2016-04-05

    IPC分类号: B24B37/24 C09G1/04

    摘要: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.