公开(公告)号：US20060024976A1

公开(公告)日：2006-02-02

申请号：US11146742

申请日：2005-06-07

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/31 ,  H01L21/26

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

公开(公告)号：US06630406B2

公开(公告)日：2003-10-07

申请号：US09855177

申请日：2001-05-14

申请人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

发明人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01J2237/3342 ,  H01L21/31138

摘要： An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.

公开(公告)号：US20100130017A1

公开(公告)日：2010-05-27

申请号：US12275394

申请日：2008-11-21

申请人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

发明人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

摘要： Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程的前端（FEOL）通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含 活性氮和活性氧，其大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：US07704872B2

公开(公告)日：2010-04-27

申请号：US11702465

申请日：2007-02-05

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

公开(公告)号：US20090277871A1

公开(公告)日：2009-11-12

申请号：US12398390

申请日：2009-03-05

申请人： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

发明人： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： G03F7/38 ,  G03F7/427 ,  H01J37/32449 ,  H01L21/31138

摘要： Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.

摘要翻译： 用于剥离高剂量离子注入的光致抗蚀剂同时尽量减少底物损失的方法。 这些方法通常包括在等离子体介质剥离过程之前和/或期间对衬底表面的钝化。 通过在等离子体介质剥离过程之前和/或期间钝化衬底表面，在等离子体剥离期间，氧化显着降低，从而导致衬底损耗降低。

公开(公告)号：US20070134935A1

公开(公告)日：2007-06-14

申请号：US11702465

申请日：2007-02-05

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/469

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

摘要翻译： 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：US20060141806A1

公开(公告)日：2006-06-29

申请号：US11155525

申请日：2005-06-17

申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L21/26

CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。

公开(公告)号：US06834656B2

公开(公告)日：2004-12-28

申请号：US09864003

申请日：2001-05-23

申请人： Han Qingyuan ,  Carlo Waldfried ,  Orlando Escorcia ,  Gary Dahrooge ,  Ivan Berry

发明人： Han Qingyuan ,  Carlo Waldfried ,  Orlando Escorcia ,  Gary Dahrooge ,  Ivan Berry

IPC分类号： B08B704

CPC分类号： H01L21/02063 ,  B08B7/0035 ,  C03C15/00 ,  C03C23/0075 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02071 ,  H01L21/31138

摘要： A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.

摘要翻译： 一种用于去除在蚀刻期间形成的聚合物的方法，并通过将衬底暴露于中性化学的等离子体来蚀刻残留物从半导体衬底。 等离子体产生大约相等量的原子氢物质和原子氧物质，其与聚合物反应并除去基底上的残留物。 该方法特别适用于包含低k电介质材料和/或铜互连的半导体衬底。

公开(公告)号：US20060105566A1

公开(公告)日：2006-05-18

申请号：US10987276

申请日：2004-11-12

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

摘要翻译： 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外线（UV）辐射，有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：US07678682B2

公开(公告)日：2010-03-16

申请号：US10987276

申请日：2004-11-12

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/8238 ,  H01L21/76 ,  H01L21/4763

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

摘要翻译： 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外线（UV）辐射，有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。