公开(公告)号：US20200036297A1

公开(公告)日：2020-01-30

申请号：US16526762

申请日：2019-07-30

Applicant: DENSO CORPORATION

Inventor： Yuu YAMAHIRA ,  Tetsuya MATSUOKA ,  Kazuma FUKUSHIMA ,  Akifumi ARARAGI ,  Noriyuki KAKIMOTO ,  Masakiyo SUMITOMO

IPC: H02M7/537 ,  H02M1/088

Abstract: In a power converter, a control circuit has a speed adjustment resistor that limits a control current to adjust a switching speed of each of first and second switching elements. The speed adjustment resistor has a resistance that varies depending on a voltage at the control electrode of each of the first and second switching elements. A feedback route connects between the control electrode of the first switching element and the control electrode of the second switching element. The feedback route has a resistance that is set to be lower than a value of the resistance of the speed adjustment resistor during a predetermined Miller period of each of the first and second switching elements.

公开(公告)号：US20200321319A1

公开(公告)日：2020-10-08

申请号：US16904088

申请日：2020-06-17

Applicant: DENSO CORPORATION

Inventor： Tetsuya MATSUOKA ,  Yuu YAMAHIRA ,  Kazuma FUKUSHIMA ,  Noriyuki KAKIMOTO

IPC: H01L25/07 ,  H01L25/18 ,  H02M7/48 ,  H01L29/739

Abstract: A power converter includes: at least one pair of first and second semiconductor devices including multiple first and second semiconductor chips, having first and second switching elements providing upper and lower arms, and multiple first and second main terminals having at least one of multiple first and second high potential terminals and multiple first and second low potential terminals; and a bridging member providing an upper and lower coupling portion, together with the first low and second high potential terminals. The first and second semiconductor chips are arranged in line symmetry with respect to first and second axes and in line symmetry with the second axis as a symmetry axis to differentiate the arrangement of the second low potential terminal with respect to the second high potential terminal from the arrangement of the first low potential terminal with respect to the first high potential terminal.

公开(公告)号：US20140001839A1

公开(公告)日：2014-01-02

申请号：US13926001

申请日：2013-06-25

Applicant: DENSO CORPORATION

Inventor： Noriyuki KAKIMOTO

IPC: H02P27/06

CPC classification number: H02P27/06 ,  H02M1/32 ,  H02M1/38 ,  H02M7/53871 ,  H02P27/08

Abstract: A power converter includes an output circuit and a control circuit. The output circuit has an upper switching device connected to a direct-current power source and a lower switching device connected in series with the upper switching device. The output circuit supplies power to a load from a connection point between the switching devices. The control circuit supplies pulse-modulated control signals to the switching devices to turn ON and OFF the switching devices. The control circuit variably sets a switching speed and a dead-time of the switching devices in such a manner that as the switching speed becomes slower, the dead-time becomes longer.

Abstract translation: 电力转换器包括输出电路和控制电路。 输出电路具有连接到与上部开关装置串联连接的直流电源和下部开关装置的上部开关装置。 输出电路从开关器件之间的连接点向负载供电。 控制电路向开关装置提供脉冲调制的控制信号以使开关装置接通和断开。 控制电路以切换速度变慢的方式可变地设定切换装置的切换速度和死区时间，死区时间变长。

公开(公告)号：US20220278030A1

公开(公告)日：2022-09-01

申请号：US17747629

申请日：2022-05-18

Applicant: DENSO CORPORATION

Inventor： Syunsuke ARAI ,  Masayoshi NISHIHATA ,  Shinji HIRAMITSU ,  Noriyuki KAKIMOTO

IPC: H01L23/495 ,  H01L23/00 ,  H01L25/07

Abstract: A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

公开(公告)号：US20180138905A1

公开(公告)日：2018-05-17

申请号：US15572640

申请日：2016-05-18

Applicant: DENSO CORPORATION

Inventor： Noriyuki KAKIMOTO

IPC: H03K17/567 ,  H03K5/08 ,  G01R19/00

CPC classification number: H03K17/567 ,  G01R19/0092 ,  G01R31/2608 ,  G01R31/44 ,  H02M1/08 ,  H03K5/08 ,  H03K17/08128 ,  H03K17/127 ,  H03K17/164 ,  H03K17/56 ,  H03K2217/0036

Abstract: A driving apparatus configured to drive a plurality of switching elements including a first switching element and a second switching element, and each of the plurality of switching elements has a gate electrode. The driving apparatus includes: a driving circuit configured to supply a voltage to the gate electrode; and a controller configured to control the plurality of switching elements to turn on or off. The controller includes a control mode having a multi-driving mode configured to drive both of the first switching element and the second switching element, and a single driving mode configured to drive only the first switching element. The controller at the single driving mode sets a gate voltage to be applied to a gate electrode of the first switching element at a clamping voltage, which is smaller than the gate voltage of the first switching element at the multi-driving mode.

公开(公告)号：US20170358512A1

公开(公告)日：2017-12-14

申请号：US15540695

申请日：2016-05-07

Applicant: DENSO CORPORATION

Inventor： Noriyuki KAKIMOTO

IPC: H01L23/34 ,  H03K17/08 ,  H01L21/822 ,  H01L25/18 ,  H01L27/04 ,  H01L25/07

CPC classification number: H01L23/34 ,  H01L21/822 ,  H01L25/07 ,  H01L25/18 ,  H01L27/04 ,  H01L2224/40137 ,  H01L2924/0002 ,  H03K17/08 ,  H03K17/127 ,  H03K2017/0806

Abstract: A semiconductor device includes: a first power semiconductor element; a second power semiconductor element that is connected in parallel with the first power semiconductor element; a voltage changing unit that changes a voltage applied to a control terminal of the first power semiconductor element when the second power semiconductor element is turned on; a detection unit that detects a current flowing in the first power semiconductor element when the voltage changing unit has changed the voltage applied to the control terminal of the first power semiconductor element; and a temperature estimation unit that estimates a temperature of the first power semiconductor element based on a characteristic of the change of the current of the first power semiconductor element with respect to a change of the voltage applied to the first power semiconductor element.

公开(公告)号：US20180308757A1

公开(公告)日：2018-10-25

申请号：US15770258

申请日：2016-12-16

Applicant: DENSO CORPORATION

Inventor： Noriyuki KAKIMOTO

IPC: H01L21/8234 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/868 ,  H01L27/088

CPC classification number: H01L21/823418 ,  H01L27/06 ,  H01L27/0727 ,  H01L27/088 ,  H01L29/407 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868 ,  H01L29/87 ,  H02M1/08 ,  H02M7/003 ,  H02M7/538

Abstract: A semiconductor device includes: reverse conducting switching elements-in each of which a diode element and a switching element are arranged in parallel on a single semiconductor substrate; a driver applying a gate voltage to a plurality of gate electrodes in the reverse conducting switching elements; and a mode determination unit determining whether a forward conduction mode in which a current mainly flows through the switching element or a reverse conduction mode in which the current flows through the diode element is being operated.

公开(公告)号：US20180212028A1

公开(公告)日：2018-07-26

申请号：US15878143

申请日：2018-01-23

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  DENSO CORPORATION

Inventor： Takashi KUNO ,  Hiroki TSUMA ,  Satoshi KUWANO ,  Akitaka SOENO ,  Toshitaka KANEMARU ,  Kenta HASHIMOTO ,  Noriyuki KAKIMOTO ,  Shuji YONEDA

IPC: H01L29/417 ,  H01L23/31 ,  H01L23/00 ,  H01L21/285 ,  H01L29/45 ,  H01L29/739 ,  H01L29/66

CPC classification number: H01L29/41708 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/32133 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/53223 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/29 ,  H01L29/0696 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66348 ,  H01L29/7397 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05018 ,  H01L2224/05076 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05224 ,  H01L2224/05347 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01014

Abstract: A semiconductor device may include: a semiconductor substrate; a surface electrode covering a surface of the semiconductor substrate; an insulating protection film covering a part of a surface of the surface electrode; and a solder-bonding metal film, the solder-bonding metal film covering a range spreading from a surface of the insulating protection film to the surface of the surface electrode, wherein the surface electrode may include: a first metal film provided on the semiconductor substrate; a second metal film being in contact with a surface of the first metal film, and having tensile strength higher than tensile strength of the first metal film; and a third metal film being in contact with a surface of the second metal film, and having tensile strength which is lower than the tensile strength of the second metal film and is higher than the tensile strength of the first metal film.