公开(公告)号：US11372340B2

公开(公告)日：2022-06-28

申请号：US13508495

申请日：2012-04-04

申请人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

发明人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

IPC分类号： G03F7/20 ,  G03F1/48

摘要： The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：US20130035888A1

公开(公告)日：2013-02-07

申请号：US13508495

申请日：2012-04-04

申请人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

发明人： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

IPC分类号： G01N37/00 ,  G06F19/00

摘要： The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

摘要翻译： 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布来生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

公开(公告)号：US08848186B2

公开(公告)日：2014-09-30

申请号：US13386524

申请日：2010-07-21

申请人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

发明人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

IPC分类号： G01B11/00 ,  G01J4/00 ,  G03F7/20 ,  G01B11/24 ,  G01N21/956

CPC分类号： G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

摘要： A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

摘要翻译： 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

公开(公告)号：US20130044331A1

公开(公告)日：2013-02-21

申请号：US13209778

申请日：2011-08-15

申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

IPC分类号： G01B11/14 ,  G01B11/26

CPC分类号： G03F7/70633

摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

公开(公告)号：US08582114B2

公开(公告)日：2013-11-12

申请号：US13209778

申请日：2011-08-15

申请人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

发明人： Amnon Manassen ,  Daniel Kandel ,  Moshe Baruch ,  Vladimir Levinski ,  Noam Sapiens ,  Joel Seligson ,  Andy Hill ,  Ohad Bachar ,  Daria Negri ,  Ofer Zaharan

IPC分类号： G01B11/02

CPC分类号： G03F7/70633

摘要： The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

摘要翻译： 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

公开(公告)号：US20120120396A1

公开(公告)日：2012-05-17

申请号：US13386524

申请日：2010-07-21

申请人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

发明人： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

IPC分类号： G01B11/00

CPC分类号： G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

摘要： A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

摘要翻译： 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。

公开(公告)号：US09927718B2

公开(公告)日：2018-03-27

申请号：US13186144

申请日：2011-07-19

申请人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

发明人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC分类号： G01J4/00 ,  G03F7/20

CPC分类号： G03F7/70633 ,  G03F7/70683

摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：US20120033215A1

公开(公告)日：2012-02-09

申请号：US13186144

申请日：2011-07-19

申请人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

发明人： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC分类号： G01B11/06 ,  G01J4/00

CPC分类号： G03F7/70633 ,  G03F7/70683

摘要： A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

摘要翻译： 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为在目标结构对准时共享公共对称中心，每个目标结构 目标结构相对于公共对称中心不变为N度旋转，其中N等于或大于180度，其中两个或更多个图案元素中的每一个具有单独的对称中心，其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的，其中M等于或大于180度。

公开(公告)号：US20070279630A1

公开(公告)日：2007-12-06

申请号：US11754892

申请日：2007-05-29

申请人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

发明人： Daniel Kandel ,  Vladimir Levinski ,  Michael Adel ,  Joel Seligson

IPC分类号： G01B11/00

CPC分类号： G03F7/70633

摘要： Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.

摘要翻译： 公开了用于测量半导体靶的特性（例如覆盖）的装置和方法。 通常，在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中，仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中，在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中，可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中，对于给定的n（其中n是整数且不等于零）的选择，仅选择±n，并且光栅仅以这些衍射级成像。

公开(公告)号：US20110069312A1

公开(公告)日：2011-03-24

申请号：US12872988

申请日：2010-08-31

申请人： Daniel Kandel ,  Vladimir Levinski ,  Alexander Svizher ,  Joel Seligson ,  Andrew Hill ,  Ohad Bachar ,  Amnon Manassen ,  Yung-Ho Alex Chuang ,  Ilan Sela ,  Moshe Markowitz ,  Daria Negri ,  Efraim Rotem

发明人： Daniel Kandel ,  Vladimir Levinski ,  Alexander Svizher ,  Joel Seligson ,  Andrew Hill ,  Ohad Bachar ,  Amnon Manassen ,  Yung-Ho Alex Chuang ,  Ilan Sela ,  Moshe Markowitz ,  Daria Negri ,  Efraim Rotem

IPC分类号： G01J4/00 ,  G01J3/28 ,  G01B11/14

CPC分类号： G01N21/47 ,  G01B11/02 ,  G01B11/0641 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/105 ,  G03F7/70625 ,  G03F7/70633

摘要： Various metrology systems and methods are provided.

摘要翻译： 提供了各种计量系统和方法。