Abstract:
A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.
Abstract:
A method for producing a multilayer component (21) is specified, which involves providing a body having dielectric layers (3) arranged one above another and first and second electrically conductive layers (4, 84, 5, 85) arranged therebetween. The first conductive layers (4, 84) are connected to a first auxiliary electrode (6) and the second conductive layers (5, 85) are connected to a second auxiliary electrode (7). The body (1, 81) is introduced into a medium and a voltage is applied between the first and second auxiliary electrodes (6, 7) for producing a material removal. Furthermore, a multilayer component is specified, which has depressions (20) formed by an electrochemically controlled material removal.
Abstract:
A method for producing a multilayer component (21) is specified, which involves providing a body having dielectric layers (3) arranged one above another and first and second electrically conductive layers (4, 84, 5, 85) arranged therebetween. The first conductive layers (4, 84) are connected to a first auxiliary electrode (6) and the second conductive layers (5, 85) are connected to a second auxiliary electrode (7). The body (1, 81) is introduced into a medium and a voltage is applied between the first and second auxiliary electrodes (6, 7) for producing a material removal. Furthermore, a multilayer component is specified, which has depressions (20) formed by an electrochemically controlled material removal.
Abstract:
A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.
Abstract:
A method for producing a multilayer substrate (1) is specified, wherein a main body (26) comprising a plurality of ceramic layers (2) is provided, wherein at least one layer (2) comprises a hole (27). In order to form a plated-through hole (4, 18, 20, 21), the hole (27) is filled with a metal by depositing the metal from a solution. Furthermore, a multilayer substrate is specified wherein a plated-through hole (4, 18, 20, 21) in the interior of the main body (26) is connected to a further contact (11), wherein the plated-through hole (4, 18, 20, 21) comprises a different material than the further contact (11) and/or is produced by a different method.macros hash =multilayer substrate star =plated-throuch hole pie =connection contact alpha =photoresist mask beta =further contact gamma =HTCC technology delta =main body matt =ceramic layer