公开(公告)号：US08383517B2

公开(公告)日：2013-02-26

申请号：US12023491

申请日：2008-01-31

申请人： Eiichi Nishimura ,  Chie Kato ,  Akitaka Shimizu ,  Hiroyuki Takahashi

发明人： Eiichi Nishimura ,  Chie Kato ,  Akitaka Shimizu ,  Hiroyuki Takahashi

IPC分类号： H01L21/311

CPC分类号： H01L21/3065 ,  H01L21/02057

摘要： A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200° C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.

摘要翻译： 可以选择性地去除通过干蚀刻硅产生的沉积物的衬底处理方法。 基板具有硅基材料和由氮化硅膜和/或氧化硅膜制成并形成在硅基材上的硬掩模，硬掩模具有开口，至少部分硅基材料 被暴露。 通过使用由卤化气体产生的等离子体的干蚀刻，在硅基材中形成对应于开口的沟槽。 在干蚀刻之后，将基板加热至不低于200℃的温度，然后向基板供应氟化氢气体和氦气。

公开(公告)号：US20100206846A1

公开(公告)日：2010-08-19

申请号：US12706094

申请日：2010-02-16

申请人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

发明人： Eiichi Nishimura ,  Masato Morishima ,  Morihiro Takanashi ,  Akitaka Shimizu ,  Yuichi Setsuhara

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01L21/31138 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/0273

摘要： A substrate processing apparatus that can appropriately carry out desired plasma processing on a substrate. The substrate is accommodated in an accommodating chamber. An ion trap partitions the accommodating chamber into a plasma producing chamber and a substrate processing chamber. High-frequency antennas are disposed in the plasma producing chamber. A process gas is introduced into the plasma producing chamber. The substrate is mounted on a mounting stage disposed in the substrate processing chamber, and a bias voltage is applied to the mounting stage. The ion trap has grounded conductors and insulating materials covering surfaces of the conductors.

摘要翻译： 能够适当地进行基板上的等离子体处理的基板处理装置。 基板容纳在容纳室中。 离子阱将容纳室分隔成等离子体产生室和基板处理室。 高频天线设置在等离子体产生室中。 将工艺气体引入等离子体产生室。 基板安装在设置在基板处理室中的安装台上，并且偏压被施加到安装台。 离子阱具有接地导体和覆盖导体表面的绝缘材料。

公开(公告)号：US08642136B2

公开(公告)日：2014-02-04

申请号：US12575076

申请日：2009-10-07

申请人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

IPC分类号： H05H1/00 ,  C23C16/52 ,  B05C11/00

CPC分类号： H01J37/32935 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.

摘要翻译： 基板处理方法包括：在减压处理室内部并引入气体的同时，在基板上进行沉积薄膜的沉积工艺; 并且在进行沉积处理的同时，通过监视窗将经过安装在处理室的监视窗的照射光朝向处理室的内部照射，并且通过接收该反射光来监视反射光的反射光强度 反射光通过监控窗口。 基板处理方法还包括测量沉积处理期间的反射光强度的时间变化，并且基于时间变化的测量值计算沉积处理的终止时间; 并且通过将终止时间设置为沉积过程的终点来终止沉积过程。

公开(公告)号：US20100086670A1

公开(公告)日：2010-04-08

申请号：US12575076

申请日：2009-10-07

申请人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Eiichi Nishimura ,  Akitaka Shimizu

IPC分类号： C23C16/52 ,  B05C11/10

CPC分类号： H01J37/32935 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.

摘要翻译： 基板处理方法包括：在减压处理室内部并引入气体的同时，在基板上进行沉积薄膜的沉积工艺; 并且在进行沉积处理的同时，通过监视窗将经过安装在处理室的监视窗的照射光朝向处理室的内部照射，并且通过接收该反射光来监视反射光的反射光强度 反射光通过监控窗口。 基板处理方法还包括测量沉积处理期间的反射光强度的时间变化，并且基于时间变化的测量值计算沉积处理的终止时间; 并且通过将终止时间设置为沉积过程的终点来终止沉积过程。

公开(公告)号：US20080179292A1

公开(公告)日：2008-07-31

申请号：US12014540

申请日：2008-01-15

申请人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

发明人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

IPC分类号： C23F1/02 ,  H01L21/306

CPC分类号： H01L21/31116

摘要： A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.

摘要翻译： 可以去除氮化硅膜而不损坏热氧化膜的基板处理方法。 将在热氧化膜上形成有至少具有热氧化膜和氮化硅膜的基板加热至不低于60℃的温度。然后向基板供给氟化氢气体。

公开(公告)号：US08034720B2

公开(公告)日：2011-10-11

申请号：US12014540

申请日：2008-01-15

申请人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

发明人： Eiichi Nishimura ,  Chie Kato ,  Jun Yamawaku

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.

摘要翻译： 可以去除氮化硅膜而不损坏热氧化膜的基板处理方法。 将在热氧化膜上形成有至少具有热氧化膜和氮化硅膜的基板加热至不低于60℃的温度。然后向基板供给氟化氢气体。

公开(公告)号：US08741396B2

公开(公告)日：2014-06-03

申请号：US13060821

申请日：2009-06-30

申请人： Hiraku Ishikawa ,  Eiichi Nishimura

发明人： Hiraku Ishikawa ,  Eiichi Nishimura

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  C23C16/347 ,  C23C16/5096 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/318

摘要： An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.

摘要翻译： 形成了具有优异的耐蚀刻性并且当抗蚀剂膜暴露于光时能够降低反射率的无定形碳膜。 一种制造半导体器件的方法包括在晶片上形成待蚀刻的目标薄膜，将含有CO气体和N 2气体的工艺气体供给到处理容器中，从供给的CO气体和N 2气体形成无定形氮化碳膜 在无定形氮化碳膜上形成氧化硅膜，在氧化硅膜上形成ArF抗蚀剂膜，对ArF抗蚀剂膜进行构图，使用ArF抗蚀剂膜作为掩模蚀刻氧化硅膜，蚀刻无定形碳氮化物 通过使用氧化硅膜作为掩模，并且通过使用无定形氮化碳膜作为掩模来蚀刻待蚀刻的目标膜。

公开(公告)号：US08530354B2

公开(公告)日：2013-09-10

申请号：US13415363

申请日：2012-03-08

申请人： Masato Kushibiki ,  Eiichi Nishimura

发明人： Masato Kushibiki ,  Eiichi Nishimura

IPC分类号： H01L21/311

CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136

摘要： The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.

摘要翻译： 本发明提供一种基板处理方法，用于处理至少包括依次堆叠的处理层，中间层和掩模层的基板。 掩模层包括被配置为暴露中间层的一部分的孔。 基板处理方法包括：材料沉积步骤，其在所述孔的侧表面上沉积材料，并且通过用沉积气体产生的等离子体蚀刻所述中间层的暴露部分来暴露所述处理层的一部分;以及蚀刻步骤 蚀刻处理层的暴露部分。

公开(公告)号：US08518828B2

公开(公告)日：2013-08-27

申请号：US12623556

申请日：2009-11-23

申请人： Tetsuo Endoh ,  Eiichi Nishimura

发明人： Tetsuo Endoh ,  Eiichi Nishimura

IPC分类号： H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/3088 ,  H01L29/66181 ,  H01L29/66787 ,  H01L29/66795

摘要： According to a disclosed semiconductor device fabrication method according to one embodiment of the present invention, a layer having a line-and-space pattern extending in one direction is etched using another layer having a line-and-space pattern extending in another direction intersecting the one direction, thereby obtaining a mask having two-dimensionally arranged dots. An underlying layer is etched using the mask, thereby providing two-dimensionally arranged pillars.

摘要翻译： 根据本发明的一个实施例公开的半导体器件制造方法，使用具有在与另一方向相交的另一个方向上延伸的线间距图案的另一层蚀刻具有沿一个方向延伸的线间距图案的层 从而获得具有二维排列的点的掩模。 使用掩模蚀刻下层，由此提供二维布置的柱。

公开(公告)号：US08491804B2

公开(公告)日：2013-07-23

申请号：US12721962

申请日：2010-03-11

申请人： Masato Kushibiki ,  Eiichi Nishimura

发明人： Masato Kushibiki ,  Eiichi Nishimura

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/311

CPC分类号： H01L21/0273 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

摘要： A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

摘要翻译： 处理具有加工对象层和作为掩模层的有机膜的基板的处理方法包括使有机膜成矿化的矿化工序。 矿化方法包括使含硅气体吸附在有机膜的表面上的吸附方法; 以及用于氧化被吸收的待转化为氧化硅膜的含硅气体的氧化工艺。 使用一价氨基硅烷作为含硅气体。