公开(公告)号：US20230348754A1

公开(公告)日：2023-11-02

申请号：US18127053

申请日：2023-03-28

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Bin Hu ,  Hsin Hsien Lu

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  H01L21/7684

Abstract: This disclosure relates to polishing compositions containing at least one abrasive, at least one organic acid or a salt thereof, at least one organic solvent in an amount of from about 3% to about 50% by weight of the composition, and an aqueous solvent.

公开(公告)号：US20230136601A1

公开(公告)日：2023-05-04

申请号：US17970668

申请日：2022-10-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Bin Hu ,  Yannan Liang ,  James Johnston ,  James McDonough

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

Abstract: A polishing composition includes an anionic abrasive; a pH adjuster; a transition metal catalyst; and an amino acid. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises tungsten or molybdenum; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210261822A1

公开(公告)日：2021-08-26

申请号：US17318011

申请日：2021-05-12

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US20210108106A1

公开(公告)日：2021-04-15

申请号：US17063965

申请日：2020-10-06

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Bin Hu ,  Liqing Wen ,  Shu-Wei Chang

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.

公开(公告)号：US20190300750A1

公开(公告)日：2019-10-03

申请号：US16299935

申请日：2019-03-12

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen

IPC: C09G1/02 ,  H01L21/321

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20250101263A1

公开(公告)日：2025-03-27

申请号：US18889658

申请日：2024-09-19

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Changhong Wu ,  Bin Hu ,  Hyosang Lee

IPC: C09G1/02 ,  H01L21/321

Abstract: The present document relates to a polishing composition that includes at least one abrasive, at least one pH adjuster, at least one guanamine compound, and water. The polishing composition can be used in a method of polishing a substrate including applying the polishing composition to a surface of a substrate and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate. The surface of the substrate can include tungsten and/or molybdenum.

公开(公告)号：US20240309241A1

公开(公告)日：2024-09-19

申请号：US18670879

申请日：2024-05-22

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US20240174892A1

公开(公告)日：2024-05-30

申请号：US18515857

申请日：2023-11-21

Applicant: Fujifilm Electronic Materials U.S.A. Inc.

Inventor： Ting-Kai Huang ,  Yannan Liang ,  Bin Hu ,  Chun-Fu Chen ,  Ying-Shen Chuang ,  Tzu-Wei Chiu ,  Sung TsaiLin ,  Hanyu Fan ,  Hsin-Hsien Lu

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

公开(公告)号：US20240034958A1

公开(公告)日：2024-02-01

申请号：US18356486

申请日：2023-07-21

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： Yannan Liang ,  Bin Hu ,  Shu-Wei Chang

IPC: C11D11/00 ,  C11D1/02 ,  C11D3/00 ,  C11D3/33 ,  C11D3/30 ,  C11D3/28 ,  C11D3/39 ,  H01L21/306

CPC classification number: C11D11/0047 ,  C11D1/02 ,  C11D3/0047 ,  C11D3/33 ,  C11D3/30 ,  C11D3/28 ,  C11D3/3942 ,  H01L21/30625

Abstract: A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.

公开(公告)号：US11851585B2

公开(公告)日：2023-12-26

申请号：US17880758

申请日：2022-08-04

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC classification number: C09G1/02 ,  C09K15/30 ,  H01L21/3212

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.