公开(公告)号：US09929319B2

公开(公告)日：2018-03-27

申请号：US14304098

申请日：2014-06-13

Applicant: General Electric Company

Inventor： Anant Achyut Setlur ,  Stanton Earl Weaver ,  Thomas Bert Gorczyca ,  Ashfaqul Islam Chowdhury ,  James Edward Murphy ,  Florencio Garcia

IPC: H01L33/50 ,  C09K11/61 ,  H01L33/00 ,  C09K11/77

CPC classification number: H01L33/504 ,  C09K11/617 ,  C09K11/7774 ,  H01L33/005 ,  H01L33/502 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012

Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+  (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

公开(公告)号：US20170236915A1

公开(公告)日：2017-08-17

申请号：US15046184

申请日：2016-02-17

Applicant: General Electric Company

Inventor： Thomas Bert Gorczyca

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/324 ,  H01L29/16

CPC classification number: H01L29/4933 ,  H01L21/049 ,  H01L21/324 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/4916 ,  H01L29/66068 ,  H01L29/7802

Abstract: In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped semiconductor layer disposed directly over the gate dielectric layer and a metal-containing layer disposed directly over the in-situ doped semiconductor layer.

公开(公告)号：US20150364659A1

公开(公告)日：2015-12-17

申请号：US14304098

申请日：2014-06-13

Applicant: General Electric Company

Inventor： Anant Achyut Setlur ,  Stanton Earl Weaver ,  Thomas Bert Gorczyca ,  Ashfaqul Islam Chowdhury ,  James Edward Murphy ,  Florencio Garcia

IPC: H01L33/50 ,  H01L33/00

CPC classification number: H01L33/504 ,  C09K11/617 ,  C09K11/7774 ,  H01L33/005 ,  H01L33/502 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012

Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+  (I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract translation: 制造LED照明装置的方法包括在LED芯片的表面上设置复合涂层。 复合涂层包括具有式I的锰掺杂磷光体和第一粘合剂的第一复合层和包含第二磷光体组合物和第二粘合剂的第二复合层。 第一粘合剂，第二粘合剂或两者包括聚（甲基）丙烯酸酯。 Ax [MFy]：Mn4 +（I）其中A是Li，Na，K，Rb，Cs或它们的组合; M是Si，Ge，Sn，Ti，Zr，Al，Ga，In，Sc，Hf，Y，La，Nb，Ta，Bi，Gd或它们的组合; x是[MFy]离子的电荷的绝对值; y是5,6或7。

公开(公告)号：US20150236151A1

公开(公告)日：2015-08-20

申请号：US14182765

申请日：2014-02-18

Applicant: GENERAL ELECTRIC COMPANY

Inventor： James Jay McMahon ,  Ljubisa Dragoljub Stevanovic ,  Stephen Daley Arthur ,  Thomas Bert Gorczyca ,  Richard Alfred Beaupre ,  Zachary Matthew Stum ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/78 ,  H01L29/40 ,  H01L21/28 ,  H01L29/16

CPC classification number: H01L29/7827 ,  H01L21/045 ,  H01L21/049 ,  H01L21/28247 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7816

Abstract: A semiconductor device is presented. The device includes a semiconductor layer including silicon carbide, and having a first surface and a second surface. A gate insulating layer is disposed on a portion of the first surface of the semiconductor layer, and a gate electrode is disposed on the gate insulating layer. The device further includes an oxide disposed between the gate insulating layer and the gate electrode at a corner adjacent an edge of the gate electrode so as the gate insulating layer has a greater thickness at the corner than a thickness at a center of the layer. A method for fabricating the device is also provided.

Abstract translation: 介绍了半导体器件。 该器件包括具有碳化硅的半导体层，并具有第一表面和第二表面。 栅极绝缘层设置在半导体层的第一表面的一部分上，栅电极设置在栅极绝缘层上。 该器件还包括设置在栅极绝缘层和栅电极之间的邻近栅电极的边缘的角部处的氧化物，因此栅极绝缘层在角部具有比层的中心处的厚度更大的厚度。 还提供了一种用于制造该装置的方法。

公开(公告)号：US08629003B2

公开(公告)日：2014-01-14

申请号：US13859005

申请日：2013-04-09

Applicant: General Electric Company

Inventor： Thomas Bert Gorczyca ,  Paul Alan McConnelee

IPC: H01L21/02 ,  C08J7/18 ,  B05D3/02

CPC classification number: H01L23/28 ,  C08G59/50 ,  C08K5/1515 ,  C08K5/1539 ,  C08K5/17 ,  C08K5/18 ,  C09J163/00 ,  H01L21/56 ,  H01L23/293 ,  H01L2224/48091 ,  H01L2224/92144

Abstract: An adhesive includes an epoxy resin and a hardener. The hardener includes trioxdiamine, diaminodicyclohexylmethane, toluene diamine, and bisphenol-A dianhydride.

Abstract translation: 粘合剂包括环氧树脂和硬化剂。 硬化剂包括三氧二胺，二氨基二环己基甲烷，甲苯二胺和双酚A二酐。

公开(公告)号：US20130214435A1

公开(公告)日：2013-08-22

申请号：US13859005

申请日：2013-04-09

Applicant: General Electric Company

Inventor： Thomas Bert Gorczyca ,  Paul Alan McConnelee

IPC: H01L23/28 ,  H01L21/56

CPC classification number: H01L23/28 ,  C08G59/50 ,  C08K5/1515 ,  C08K5/1539 ,  C08K5/17 ,  C08K5/18 ,  C09J163/00 ,  H01L21/56 ,  H01L23/293 ,  H01L2224/48091 ,  H01L2224/92144

Abstract: An adhesive includes an epoxy resin and a hardener. The hardener includes trioxdiamine, diaminodicyclohexylmethane, toluene diamine, and bisphenol-A dianhydride.

Abstract translation: 粘合剂包括环氧树脂和硬化剂。 硬化剂包括三氧二胺，二氨基二环己基甲烷，甲苯二胺和双酚A二酐。

公开(公告)号：US20200161442A1

公开(公告)日：2020-05-21

申请号：US16748493

申请日：2020-01-21

Applicant: General Electric Company

Inventor： Thomas Bert Gorczyca

IPC: H01L29/49 ,  H01L21/04 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/16 ,  H01L21/324

Abstract: In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped semiconductor layer disposed directly over the gate dielectric layer and a metal-containing layer disposed directly over the in-situ doped semiconductor layer.

公开(公告)号：US10573722B2

公开(公告)日：2020-02-25

申请号：US15046184

申请日：2016-02-17

Applicant: General Electric Company

Inventor： Thomas Bert Gorczyca

IPC: H01L29/66 ,  H01L29/49 ,  H01L29/78 ,  H01L21/04 ,  H01L21/324 ,  H01L29/16 ,  H01L29/40

Abstract: In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed above the wide bandgap semiconductor substrate layer; a gate dielectric layer disposed directly over a portion of the epitaxial semiconductor layer; and a gate electrode disposed directly over the gate dielectric layer. The gate electrode includes an in-situ doped semiconductor layer disposed directly over the gate dielectric layer and a metal-containing layer disposed directly over the in-situ doped semiconductor layer.