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    SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
    3.
    发明申请
    SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION 有权
    具有断点终止延伸的半导体器件

    公开(公告)号：US20150115284A1

    公开(公告)日：2015-04-30

    申请号：US14396852

    申请日：2013-05-15

    Applicant: GENERAL ELECTRIC COMPANY

    Inventor： Stephen Daley Arthur ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  Kevin Sean Matocha ,  Richard Joseph Saia ,  Zachary Matthew Stum ,  Ljubisa Dragoljub Stevanovic ,  Kuna Venkat Satya Rama Kishore ,  James William Kretchmer

    IPC: H01L29/36 ,  H01L29/06 ,  H01L29/16

    CPC classification number: H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

    Abstract: A semiconductor device includes a substrate including silicon carbide; a drift layer disposed over the substrate including a drift region doped with a first dopant and conductivity type; and a second region, doped with a second dopant and conductivity type, adjacent to the drift region and proximal to a surface of the drift layer. The semiconductor device further includes a junction termination extension adjacent to the second region with a width and discrete regions separated in a first and second direction doped with varying concentrations of the second dopant type, and an effective doping profile of the second conductivity type of functional form that generally decreases away from the edge of the primary blocking junction. The width is less than or equal to a multiple of five times the width of the one-dimensional depletion width, and the charge tolerance of the semiconductor device is greater than 1.0×1013 per cm2.

    Abstract translation: 半导体器件包括：包含碳化硅的衬底; 设置在所述衬底上的漂移层，包括掺杂有第一掺杂剂和导电类型的漂移区; 以及掺杂有第二掺杂剂和导电类型的第二区域，其邻近漂移区并且靠近漂移层的表面。 所述半导体器件还包括与所述第二区相邻的连接终端延伸部，所述连接终端延伸部具有在掺杂有不同浓度的所述第二掺杂剂类型的第一和第二方向上分离的宽度和离散区域以及所述第二导电类型的功能形式的有效掺杂分布 这通常从主阻塞结的边缘减小。 宽度小于或等于一维耗尽宽度宽度的五倍的倍数，半导体器件的电荷容差大于1.0×1013 / cm2。

    Power module
    4.
    发明授权
    Power module 有权

    公开(公告)号：US10559553B2

    公开(公告)日：2020-02-11

    申请号：US16379527

    申请日：2019-04-09

    Applicant: General Electric Company

    Inventor： Brian Lynn Rowden ,  Ljubisa Dragoljub Stevanovic

    IPC: H01L25/07 ,  H01L29/16 ,  H02M7/00 ,  H01L23/64

    Abstract: A power module includes a first bus bar having a first plurality of tabs, wherein each of the first plurality of tabs is electrically coupled to a respective conductive trace of a plurality of conductive traces disposed on a first side; a second bus bar having a second plurality of tabs, wherein each of the second plurality of tabs is electrically coupled to a respective conductive trace of a plurality of conductive traces disposed on a second side; and a third bus bar having a third plurality of tabs, wherein at least one tab of the third plurality of tabs is electrically coupled to a respective conductive trace of the plurality of conductive traces disposed on the first side and at least one tab of the third plurality of tabs is electrically coupled to a respective conductive trace of the plurality of conductive traces disposed on the second side.

    POWER MODULE
    6.
    发明申请
    POWER MODULE 审中-公开

    公开(公告)号：US20190237440A1

    公开(公告)日：2019-08-01

    申请号：US16379527

    申请日：2019-04-09

    Applicant: General Electric Company

    Inventor： Brian Lynn Rowden ,  Ljubisa Dragoljub Stevanovic

    IPC: H01L25/07 ,  H01L29/16 ,  H02M7/00

    CPC classification number: H01L25/072 ,  H01L23/645 ,  H01L29/1608 ,  H01L2224/0603 ,  H01L2224/49111 ,  H01L2224/49113 ,  H02M7/003

    Abstract: A power module may include a first bus bar having a first plurality of tabs, wherein each of the first plurality of tabs is electrically coupled to a respective conductive trace of a plurality of conductive traces disposed on a first side; a second bus bar having a second plurality of tabs, wherein each of the second plurality of tabs is electrically coupled to a respective conductive trace of a plurality of conductive traces disposed on a second side; and a third bus bar having a third plurality of tabs, wherein at least one tab of the third plurality of tabs is electrically coupled to a respective conductive trace of the plurality of conductive traces disposed on the first side and at least one tab of the third plurality of tabs is electrically coupled to a respective conductive trace of the plurality of conductive traces disposed on the second side.

    Automatic short circuit protection switching device systems and methods
    7.
    发明授权
    Automatic short circuit protection switching device systems and methods 有权

    公开(公告)号：US10033298B1

    公开(公告)日：2018-07-24

    申请号：US15411422

    申请日：2017-01-20

    Applicant: General Electric Company

    Inventor： Ravisekhar Nadimpalli Raju ,  Ramanujam Ramabhadran ,  Ljubisa Dragoljub Stevanovic ,  William George Earls

    IPC: H02M7/217 ,  H02M1/32 ,  H02M1/08

    Abstract: Systems and methods for providing automatic short circuit protection in an electrical system via a switching device. In some embodiments, the switching device includes a switching transistor that selectively switches between an open position and a closed position based at least in part on a switching control signal, for example, to facilitate converting electrical power with first electrical characteristics output into electrical power with the second electrical characteristics. Additionally, the switching device includes a protection transistor electrically coupled in series with the switching transistor, in which a constant gate voltage is supplied to the protection transistor to maintain the first protection transistor in the closed position during operation of the power converter; and the protection transistor automatically limits current flow through the first switching device by reducing a gate voltage applied to the switching transistor when a short circuit is expected to be present in the electrical system.

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