公开(公告)号：US20130059439A1

公开(公告)日：2013-03-07

申请号：US13670356

申请日：2012-11-06

Applicant: Hitachi Chemical Company, Ltd.

Inventor： Takashi Shinoda ,  Kazuhiro Enomoto ,  Toshiaki Akutsu

IPC: H01L21/306 ,  H01L21/304

CPC classification number: C09K3/1472 ,  C09G1/02 ,  H01L21/31053

Abstract: The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second solution comprises a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, the pH of the second solution is 6.5 or higher, and the first solution and second solution are mixed so that the phosphoric acid compound content is within a prescribed range. The CMP polishing liquid of the invention comprises cerium-based abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, with the phosphoric acid compound content being within a prescribed range.

Abstract translation: 本发明的CMP抛光液通过混合第一溶液和第二溶液来使用，第一溶液包括铈基磨料颗粒，分散剂和水，第二溶液包含聚丙烯酸化合物，表面活性剂，pH调节剂， 磷酸化合物和水，第二溶液的pH为6.5以上，第一溶液和第二溶液混合，使得磷酸化合物含量在规定范围内。 本发明的CMP抛光液含有磷酸化合物含量在规定范围内的铈系磨粒，分散剂，聚丙烯酸化合物，表面活性剂，pH调节剂，磷酸化合物和水。

公开(公告)号：US09318346B2

公开(公告)日：2016-04-19

申请号：US14468688

申请日：2014-08-26

Applicant: HITACHI CHEMICAL COMPANY., LTD.

Inventor： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

Abstract translation: 含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。 二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。 二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。

公开(公告)号：US09966269B2

公开(公告)日：2018-05-08

申请号：US15314692

申请日：2015-05-29

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Shigeru Yoshikawa ,  Munehiro Oota ,  Takaaki Tanaka ,  Takashi Shinoda

IPC: C09K13/06 ,  H01L21/306 ,  B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/30625 ,  B24B37/00 ,  B24B37/044 ,  C01F17/0043 ,  C01P2002/70 ,  C01P2002/72 ,  C01P2004/62 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

Abstract: One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2θ=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 μm or greater is 5000×103/mL or less.

公开(公告)号：US20170267895A9

公开(公告)日：2017-09-21

申请号：US14799971

申请日：2015-07-15

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

Abstract: The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

公开(公告)号：US20150315419A1

公开(公告)日：2015-11-05

申请号：US14799971

申请日：2015-07-15

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Takashi Shinoda ,  Shigeru Nobe ,  Takafumi Sakurada ,  Yoshikazu Oomori ,  Tadahiro Kimura

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

Abstract: The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50±5° C. is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

Abstract translation: 本发明提供了通过抑制电子在阻挡导体和导电物质之间的边界附近转移而抑制导电物质的布线的腐蚀或抑制阻挡导体和导电物质的双金属腐蚀的CMP抛光浆料，例如 作为铜。 本发明提供了用于CMP的抛光浆料，用于至少对与导体层接触的导体层和导电物质层进行抛光，其中在50±5℃下导电物质与导体之间的电位差的绝对值为0.25 当电位计的正电极和负电极分别连接到导电物质和导体时，抛光浆料中的V或更小。 用于CMP的抛光浆料优选包含至少一种选自含有羟基，羰基，羧基，氨基，酰胺基和亚磺酰基中的任何一种的杂环化合物并且含有氮和硫原子中的至少一个的化合物。

公开(公告)号：US20170133237A1

公开(公告)日：2017-05-11

申请号：US15366380

申请日：2016-12-01

Applicant: Hitachi Chemical Company, Ltd.

Inventor： Munehiro Oota ,  Takaaki Tanaka ,  Toshio Takizawa ,  Shigeru Yoshikawa ,  Takaaki Matsumoto ,  Takahiro Yoshikawa ,  Takashi Shinoda

IPC: H01L21/3105 ,  B24B37/04 ,  C09G1/02

CPC classification number: H01L21/31055 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

公开(公告)号：US20140363973A1

公开(公告)日：2014-12-11

申请号：US14468688

申请日：2014-08-26

Applicant: HITACHI CHEMICAL COMPANY., LTD.

Inventor： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

IPC: H01L21/321 ,  C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

Abstract translation: 含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。 二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。 二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。