公开(公告)号：US20190287770A1

公开(公告)日：2019-09-19

申请号：US16110005

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Taku IWASE ,  Tsutomu TETSUKA ,  Kenetsu YOKOGAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus improves uniformity of a plasma in a radial direction, generation efficiency of plasma, and a yield of a process, and the apparatus includes a sample stage which includes a dielectric susceptor ring located surrounding a top surface of the sample stage on an outer peripheral and a dielectric lower ring-shaped plate located at a position lower than a top surface of the susceptor ring on its outer peripheral side. A difference in height between the top surfaces of the lower ring-shaped plate and the sample is set in a range of around 5 mm of a value found by a formula using a distance: G [mm] between the upper and the lower electrodes, a frequency: f [MHz] of a first high-frequency power, and a pressure: P [Pa] in the processing chamber, and −0.1×G−0.06×f−4.4×ln(P)+22.

公开(公告)号：US20180082825A1

公开(公告)日：2018-03-22

申请号：US15443488

申请日：2017-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hayato WATANABE ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  B08B7/00 ,  B08B9/46

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  B08B9/46 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

公开(公告)号：US20190295823A1

公开(公告)日：2019-09-26

申请号：US16286338

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Kenetsu YOKOGAWA ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

公开(公告)号：US20180068862A1

公开(公告)日：2018-03-08

申请号：US15558045

申请日：2017-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi TERAKURA ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H05H1/46 ,  H05H2001/469

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

公开(公告)号：US20200227270A1

公开(公告)日：2020-07-16

申请号：US16482106

申请日：2018-10-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Takao ARASE ,  Satoshi TERAKURA ,  Hayato WATANABE ,  Masahito MORI

IPC: H01L21/311 ,  H01L21/3213

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

公开(公告)号：US20190189396A1

公开(公告)日：2019-06-20

申请号：US15906983

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Taku IWASE ,  Tsutomu TETSUKA ,  Masakazu ISOZAKI ,  Kenetsu YOKOGAWA ,  Masahito MORI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/507

CPC classification number: H01J37/3211 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02274 ,  H01L21/311

Abstract: A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage. A ring-shaped recess and a metal ring-shaped member are provided between the discoid member and the upper electrode, the ring-shaped recess being formed on the discoid member, the metal ring-shaped member being embedded in the ring-shaped recess in contact with the upper electrode.

公开(公告)号：US20180040459A1

公开(公告)日：2018-02-08

申请号：US15425014

申请日：2017-02-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Masahito MORI ,  Takao ARASE ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32724 ,  H01J37/32871 ,  H01J2237/334

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.