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公开(公告)号：US06605890B1
公开(公告)日：2003-08-12
申请号：US09598323
申请日：2000-06-21
IPC分类号： H01J2907
CPC分类号： H01J29/07 , H01J2229/0744
摘要： A color cathode ray tube has an electron gun, a phosphor screen, and a shadow mask closely spaced from the phosphor screen. The shadow mask has plural strips extending in a direction perpendicular to a horizontal scanning direction of electron beams emitted from the electron gun and plural bridge portions connecting adjacent ones among the plural strips. The shadow mask is formed with an aperture area having plural slot-shaped electron beam apertures therein. The shadow mask is provided with at least one wire held under tension in the extending direction of the plural strips so as to be superposed on a surface of one of the plural strips in the aperture area. The surface of the one of the plural strips is a surface of the one of the plural strips facing the electron gun.
摘要翻译： 彩色阴极射线管具有与荧光屏紧密间隔的电子枪，荧光屏和荫罩。 荫罩具有沿从垂直于从电子枪发射的电子束的水平扫描方向垂直的方向延伸的多个条带，以及连接多个条带中的相邻的多个桥接部分。 荫罩形成有其中具有多个槽形电子束孔的开口区域。 荫罩设置有至少一根沿多个条的延伸方向张力保持的线，以便在开口区域中的多个条带之一的表面上重叠。 多个条带之一的表面是面对电子枪的多个条带之一的表面。
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公开(公告)号：US07388228B2
公开(公告)日：2008-06-17
申请号：US11174674
申请日：2005-07-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
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公开(公告)号：US20050242354A1
公开(公告)日：2005-11-03
申请号：US11174674
申请日：2005-07-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/786
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
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4.发明授权Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film 有权具有改进的接触孔布置的显示装置，用于使半导体层通过绝缘膜接触公开(公告)号：US06936847B2
公开(公告)日：2005-08-30
申请号：US10408451
申请日：2003-04-08
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/786 , H01L29/15 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。
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公开(公告)号：US06624443B2
公开(公告)日：2003-09-23
申请号：US10066702
申请日：2002-02-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： H01L2701
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
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公开(公告)号：US4543441A
公开(公告)日：1985-09-24
申请号：US579597
申请日：1984-02-13
申请人： Masaharu Kumada , Hideo Tanabe , Katsuo Yuhara , Akira Misumi , Hiroshi Kawasaki
发明人： Masaharu Kumada , Hideo Tanabe , Katsuo Yuhara , Akira Misumi , Hiroshi Kawasaki
IPC分类号： H01L31/04 , H01L31/0216 , H01L31/0224 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/03921 , Y02E10/50
摘要： A solar battery has a pair of opposed light incident transparent electroconductive and back electrodes sandwiching amorphous silicon layers formed on a substrate with at least a major surface of the back electrode surface being in contact with an organic resin layer and being made of a compound of a transition metal and silicon, a compound of a transition metal and nitrogen, or a compound of a transition metal and carbon. Excellent corrosion resistance of the back electrode is obtained and the battery has high performance and high reliability.
摘要翻译： 太阳能电池具有一对相对的光入射透明导电和背面电极，其夹持形成在基板上的非晶硅层，所述背面电极表面的至少主表面与有机树脂层接触，并且由 过渡金属和硅，过渡金属和氮的化合物，或过渡金属和碳的化合物。 获得背电极的优异的耐腐蚀性，并且电池具有高性能和高可靠性。
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公开(公告)号：US07570337B2
公开(公告)日：2009-08-04
申请号：US11898278
申请日：2007-09-11
IPC分类号： G02F1/1345
CPC分类号： G02F1/133345 , G02F1/133555 , G02F1/13452 , G02F2001/133357
摘要： In a liquid crystal display device disposed with reflective regions and transmissive regions, two organic insulating films are formed on a connection terminal portion and radial non-uniformities are prevented from occurring when applying the upper organic insulating film. Pixel portions including transmissive regions and reflective regions are formed, and a second organic insulating film is formed between a metal layer that forms reflective electrodes and a transparent conductive film that forms pixel electrodes to planarize concavo-convexities in the reflective electrodes. In contact holes of a connection terminal portion, the inclination of a first organic resin film is made smooth to control the occurrence of radial non-uniformities occurring in the second organic insulating film.
摘要翻译： 在设置有反射区域和透射区域的液晶显示装置中，在连接端子部分上形成两个有机绝缘膜，并且当施加上部有机绝缘膜时防止发生径向不均匀性。 形成包括透射区域和反射区域的像素部分，并且在形成反射电极的金属层和形成像素电极的透明导电膜之间形成第二有机绝缘膜，以平坦化反射电极中的凹凸。 在连接端子部分的接触孔中，使第一有机树脂膜的倾斜平滑，以控制在第二有机绝缘膜中发生的径向非均匀性的发生。
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8.发明授权
公开(公告)号：US6111723A
公开(公告)日：2000-08-29
申请号：US84321
申请日：1998-05-26
申请人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
发明人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
CPC分类号： G11B5/3903 , G11B5/1278 , G11B5/1871 , G11B5/3103 , G11B5/3106 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3967 , G11B5/112
摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.
摘要翻译： 在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将它们插入在它们之间的软磁性部件的感应型写头，包括在移动方向上形成的磁极 的介质和导体，并且设置在磁阻头附近以及支撑这些磁头的基板上，本发明公开了一种复合磁头，其特征在于，包括磁头构成部件的浮动面的一部分 具有凹槽，并且来自介质的读/写操作由这些凹槽插入的部分实现。
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公开(公告)号：US5897969A
公开(公告)日：1999-04-27
申请号：US975332
申请日：1997-11-20
申请人： Akira Taniyama , Makoto Morijiri , Haruko Tanaka , Isamu Yuito , Eiji Ashida , Hiroaki Koyanagi , Hideo Tanabe , Tetsuo Kobayashi
发明人： Akira Taniyama , Makoto Morijiri , Haruko Tanaka , Isamu Yuito , Eiji Ashida , Hiroaki Koyanagi , Hideo Tanabe , Tetsuo Kobayashi
CPC分类号： G11B5/3906 , G11B5/3163 , G11B5/3903 , G11B5/3932
摘要： A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by the patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks.
摘要翻译： 通过在下屏蔽膜上形成的下绝缘膜上的图案化技术形成用于控制磁阻膜的磁畴的磁畴控制膜。 磁阻膜形成在磁畴控制膜上，用于使用磁阻效应将来自磁记录介质的磁信号转换成电信号。 通过剥离方法在磁阻膜上形成抗蚀剂图案，以便留下与磁记录介质的轨道相对应的磁阻膜的区域。 通过离子铣削形成磁阻元件，仅留下对应于轨道的磁阻膜的部分。
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公开(公告)号：US4893052A
公开(公告)日：1990-01-09
申请号：US3325
申请日：1987-01-14
申请人： Hideo Tanabe , Mamoru Tsuzurahara
发明人： Hideo Tanabe , Mamoru Tsuzurahara
CPC分类号： H01J1/28
摘要： A cathode structure comprises a substrate including a porous sinter of a metal having a high melting point, which is impregnated with electron emitting material, a metal cup for receiving the substrate, a layer of solder disposed between the substrate and the metal cup, a covering layer disposed between the substrate and the solder layer and made of a metal having a melting point higher than that of the solder, a metal sleeve for supporting the metal cup, and a heater.
摘要翻译： 阴极结构包括：基底，其包括浸渍有电子发射材料的具有高熔点金属的多孔烧结体，用于接收基底的金属杯，设置在基底和金属杯之间的焊料层，覆盖物 层，其设置在基板和焊料层之间，并且由熔点高于焊料的金属制成，用于支撑金属杯的金属套和加热器。
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