公开(公告)号：US08944707B2

公开(公告)日：2015-02-03

申请号：US12104745

申请日：2008-04-17

Applicant: Hyun-soo Kim

Inventor： Hyun-soo Kim

IPC: B41J11/58 ,  B41J13/10 ,  B65H1/26 ,  B65H3/66

CPC classification number: B41J13/103 ,  B65H1/26 ,  B65H3/66 ,  B65H2404/61 ,  B65H2405/113 ,  B65H2405/31 ,  B65H2801/06

Abstract: A printing medium supplying unit usable with an image forming apparatus which includes a casing and a feeding unit to feed a printing medium, and the image forming apparatus having the same. The printing medium supplying unit includes a feeding cassette to store and to supply the printing medium; and a guide unit rotatably coupled to the feeding cassette to guide the printing medium to the feeding unit.

Abstract translation: 一种可用于图像形成装置的打印介质供给单元，其包括壳体和用于输送打印介质的进给单元，以及具有该打印介质供给单元的图像形成装置。 打印介质供给单元包括用于存储和供应打印介质的进给盒; 以及引导单元，其可旋转地联接到所述馈送盒以将所述打印介质引导到所述馈送单元。

公开(公告)号：US08331175B2

公开(公告)日：2012-12-11

申请号：US12576543

申请日：2009-10-09

Applicant: Kwang-kyu Bang ,  Kwan-jong Park ,  Hyun-soo Kim

Inventor： Kwang-kyu Bang ,  Kwan-jong Park ,  Hyun-soo Kim

IPC: G11C29/00

CPC classification number: G11C29/48 ,  G01R31/3004 ,  G11C29/12005 ,  G11C29/1201 ,  G11C29/50 ,  G11C2029/2602

Abstract: According to example embodiments, a solid state drive system includes at least one semiconductor memory, a control circuit including first connection terminals, and second connection terminals. The first connection terminals may be configured to supply one or more operational voltages to the at least one semiconductor memory. The second connection terminals may be configured to supply one or more test voltages to the at least one semiconductor memory.

Abstract translation: 根据示例性实施例，固态驱动系统包括至少一个半导体存储器，包括第一连接端子的控制电路和第二连接端子。 第一连接端子可以被配置为向至少一个半导体存储器提供一个或多个工作电压。 第二连接端子可以被配置为向至少一个半导体存储器提供一个或多个测试电压。

公开(公告)号：US08173506B2

公开(公告)日：2012-05-08

申请号：US12626959

申请日：2009-11-30

Applicant: Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

Inventor： Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

IPC: H01L21/336

CPC classification number: H01L21/28052 ,  H01L29/4236

Abstract: A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a conformal gate oxide layer on the semiconductor in which the trench has been formed, forming a first gate electrode layer on the gate oxide layer, forming a silicon layer on the first gate electrode layer to fill the trench. Then, a portion of the first gate electrode layer is removed to form a recess which exposed a portion of a lateral surface of the silicon layer. A metal layer is then formed on the semiconductor substrate including on the silicon layer. Next, the semiconductor substrate is annealed while the lateral surface of the silicon layer is exposed to form a metal silicide layer on the silicon layer.

Abstract translation: 形成掩埋栅电极的方法防止在栅电极的硅化物层中形成空隙。 该方法开始于在半导体衬底中形成沟槽，在已经形成沟槽的半导体上形成共形栅极氧化层，在栅极氧化层上形成第一栅电极层，在第一栅电极上形成硅层 层填补沟槽。 然后，去除第一栅极电极层的一部分以形成暴露硅层的侧表面的一部分的凹部。 然后在包括硅层的半导体衬底上形成金属层。 接下来，半导体衬底退火，同时暴露硅层的侧表面以在硅层上形成金属硅化物层。

公开(公告)号：US07781246B2

公开(公告)日：2010-08-24

申请号：US11882259

申请日：2007-07-31

Applicant: Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

Inventor： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/44

Abstract: Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

Abstract translation: 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

Applicant: Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

Inventor： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC: H01L33/00

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract translation: 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20060067736A1

公开(公告)日：2006-03-30

申请号：US11170039

申请日：2005-06-30

Applicant: Hyun-soo Kim ,  Hyung-seong Shin

Inventor： Hyun-soo Kim ,  Hyung-seong Shin

IPC: G03G15/00

CPC classification number: G03G21/1647 ,  G03G21/1638 ,  G03G21/1685 ,  G03G2215/1661 ,  G03G2215/20

Abstract: A driving apparatus with a power disconnecting part for disconnecting power transmitted to an image fixing unit while an image formed on an image transfer belt is cleaned when a paper jam occurs, and an image forming apparatus and method for performing the same. The image forming apparatus comprises a driving motor, a belt unit driving part having a belt driving gear connected to the driving motor to drive an image belt, an image fixing unit driving part having an image fixing gear for driving an image fixing roller for fixing a toner image onto a recording medium, a power disconnecting part for transmitting the power of the driving motor of the belt unit driving part to the image fixing unit driving part or for disconnecting the power transmission of the driving motor from the image fixing unit driving part, and a power disconnection actuating part for actuating the power disconnecting part.

Abstract translation: 当发生卡纸时，清洁形成在图像转印带上的图像的用于断开传送到图像定影单元的电力的驱动装置，以及用于执行该图像形成装置和方法。 图像形成装置包括驱动电机，带单元驱动部分，具有连接到驱动电机的带驱动齿轮以驱动图像带;图像定影单元驱动部分，具有用于驱动图像定影辊的图像定影齿轮，用于固定图像定影辊 调色剂图像到记录介质上，电源断开部分，用于将带单元驱动部分的驱动电机的电力传送到图像定影单元驱动部分，或用于将驱动电机的动力传输与图像定影单元驱动部分分离; 以及用于致动动力分离部的动力断路致动部。

公开(公告)号：US20110198652A1

公开(公告)日：2011-08-18

申请号：US13095487

申请日：2011-04-27

Applicant: Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

Inventor： Joon-seop Kwak ,  Tae-yeon Seong ,  Jae-hee Cho ,  June-o Song ,  Dong-seok Leem ,  Hyun-soo Kim

IPC: H01L33/60 ,  B82Y99/00

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32

Abstract: A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Abstract translation: 提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。 沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极 反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

公开(公告)号：US20110121509A1

公开(公告)日：2011-05-26

申请号：US12785899

申请日：2010-05-24

Applicant: Dong-hyup Shin ,  Hyun-soo Kim

Inventor： Dong-hyup Shin ,  Hyun-soo Kim

IPC: B65H3/06

CPC classification number: B65H3/0684 ,  B65H3/0669 ,  B65H85/00 ,  B65H2403/47 ,  B65H2403/72 ,  B65H2403/723 ,  B65H2801/06

Abstract: A medium supply unit of an image forming apparatus, the medium supply unit may include: a main body housing; a tray connected to the main body housing and loading a printing-target medium therein; an activating shaft connected to the main body housing and being rotated in a predetermined direction by an activating force of an activating source; an intermediate member supported by one end of the activating shaft to deliver a rotating force of the activating shaft; a first elastic member having one end connected to the intermediate member and the other end supported by the activating shaft; and elastically biasing the intermediate member in a direction facing the printing-target medium according to a rotation of the activating shaft; and a roller unit having a roller unit housing that is attachable to the intermediate member and at least one roller that is supported by the roller unit housing and picks up and supplies printing-target media loaded in the tray; and configured to deliver to the roller(s) an elastic force of the first elastic member and a rotating force of the activating shaft when the activating shaft is rotated.

Abstract translation: 一种图像形成装置的介质供给单元，所述介质供给单元可以包括：主体壳体; 连接到主体壳体并在其中装载印刷目标介质的托盘; 活动轴，其连接到主体壳体并且通过激活源的激活力沿预定方向旋转; 中间构件，其由所述致动轴的一端支撑以传递所述致动轴的旋转力; 第一弹性构件，其一端连接到中间构件，另一端由活动轴支撑; 并且根据所述致动轴的旋转使所述中间构件朝向所述印刷对象介质的方向弹性偏置; 以及滚子单元，其具有可附接到所述中间构件的辊单元壳体和由所述滚子单元壳体支撑并提供并供给装载在所述托盘中的印刷对象介质的至少一个辊; 并且构造成当所述致动轴旋转时，将所述第一弹性构件的弹力和所述致动轴的旋转力传递到所述辊。

公开(公告)号：US07935554B2

公开(公告)日：2011-05-03

申请号：US12407361

申请日：2009-03-19

Applicant: Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

Inventor： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC: H01L21/302

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract translation: 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20100240184A1

公开(公告)日：2010-09-23

申请号：US12626959

申请日：2009-11-30

Applicant: Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

Inventor： Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

IPC: H01L21/336 ,  H01L21/28

CPC classification number: H01L21/28052 ,  H01L29/4236

Abstract: A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a conformal gate oxide layer on the semiconductor in which the trench has been formed, forming a first gate electrode layer on the gate oxide layer, forming a silicon layer on the first gate electrode layer to fill the trench. Then, a portion of the first gate electrode layer is removed to form a recess which exposed a portion of a lateral surface of the silicon layer. A metal layer is then formed on the semiconductor substrate including on the silicon layer. Next, the semiconductor substrate is annealed while the lateral surface of the silicon layer is exposed to form a metal silicide layer on the silicon layer.

Abstract translation: 形成掩埋栅电极的方法防止在栅电极的硅化物层中形成空隙。 该方法开始于在半导体衬底中形成沟槽，在已经形成沟槽的半导体上形成共形栅极氧化层，在栅极氧化层上形成第一栅电极层，在第一栅电极上形成硅层 层填补沟槽。 然后，去除第一栅极电极层的一部分以形成暴露硅层的侧表面的一部分的凹部。 然后在包括硅层的半导体衬底上形成金属层。 接下来，半导体衬底退火，同时暴露硅层的侧表面以在硅层上形成金属硅化物层。