公开(公告)号：US3190773A

公开(公告)日：1965-06-22

申请号：US10310361

申请日：1961-04-14

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  MARINACE JOHN C ,  O'ROURKE INGHAM MARY J

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/00 ,  Y10S438/925

公开(公告)号：US3046459A

公开(公告)日：1962-07-24

申请号：US86288759

申请日：1959-12-30

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  O'ROURKE MARY J

IPC: H01L21/205 ,  H01L27/00 ,  H01L29/00 ,  H01L31/0687

CPC classification number: H01L31/0687 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/00 ,  H01L29/00 ,  Y02E10/544 ,  Y10S438/979

公开(公告)号：US3208887A

公开(公告)日：1965-09-28

申请号：US11911161

申请日：1961-06-23

Applicant: IBM

Inventor： ANDERSON RICHARD L

IPC: C30B25/02 ,  H01L21/205 ,  H01L29/00 ,  H03K17/74

CPC classification number: H03K17/74 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/00

公开(公告)号：US3072507A

公开(公告)日：1963-01-08

申请号：US82411559

申请日：1959-06-30

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  MARINACE JOHN C ,  SILVEY GENE A

IPC: C30B19/04 ,  C30B19/10 ,  C30B25/02 ,  C30B25/18 ,  H01L21/00 ,  H01L21/205 ,  H01L21/363 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B19/04 ,  C30B19/106 ,  C30B25/02 ,  C30B25/18 ,  C30B29/08 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/00 ,  Y10S148/022 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S148/17

Abstract: 886,393. Coating with germanium. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 16, 1960 [June 30, 1959], No. 21142/60. Class 82(2). [Also in Group XXXVI] A semi-conductor device is made by epitaxially depositing germanium on a gallium arsenide substrate. The device may be produced in the apparatus shown, germanium source 6 and iodine 7 being heated to 550‹C. by coil 2a to form germanium iodide which decomposes on gallium arsenide substrate 5 (maintained at 420‹C. by coil 2b) to deposit germanium layer 9. Thus a diode may be produced by depositing P type germanium on N type gallium arsenide.

公开(公告)号：US3082283A

公开(公告)日：1963-03-19

申请号：US85539359

申请日：1959-11-25

Applicant: IBM

Inventor： ANDERSON RICHARD L

IPC: H01L21/205 ,  H01L31/00

CPC classification number: H01L21/02395 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02576 ,  H01L31/00 ,  Y10S148/072 ,  Y10S438/933

公开(公告)号：US2894152A

公开(公告)日：1959-07-07

申请号：US50854055

申请日：1955-05-16

Applicant: IBM

Inventor： ANDERSON RICHARD L

IPC: H01L29/00 ,  H01L29/417

CPC classification number: H01L29/00 ,  H01L29/417

公开(公告)号：US3234057A

公开(公告)日：1966-02-08

申请号：US12828661

申请日：1961-06-23

Applicant: IBM

Inventor： ANDERSON RICHARD L

IPC: H01L21/00 ,  H01L21/18

CPC classification number: H01L21/185 ,  H01L21/00 ,  Y10S148/072 ,  Y10S438/933

公开(公告)号：US3067387A

公开(公告)日：1962-12-04

申请号：US82701259

申请日：1959-07-14

Applicant: IBM

Inventor： ANDERSON RICHARD L ,  O'ROURKE MARY J

IPC: G01R31/26

CPC classification number: G01R31/2601