Abstract:
A package substrate includes a substrate, an insulating protective layer and an interposer. The substrate has a first surface and a second surface opposing to the first surface. The substrate includes a plurality of first conductive pads embedded in the first surface. The insulating protective layer is disposed on the first surface of the substrate. The insulating protective layer has an opening for exposing the first conductive pads embedded in the first surface of the substrate. The interposer has a top surface and a bottom surface opposing to the top surface. The interposer includes a plurality of conductive vias and a plurality of second conductive pads located on the bottom surface. The interposer is located in a recess defined by the opening of the insulating protective layer and the first surface of the substrate. Each of the second conductive pads is electrically connected to corresponding first conductive pad.
Abstract:
A chip package including a heat-dissipating device, a first thermal interface material layer disposed on the heat-dissipating device, a patterned circuit layer disposed on the first thermal interface material layer, a chip disposed on the patterned circuit layer and electrically connected to the patterned circuit layer, and an insulating encapsulant covering the chip, the patterned circuit layer, and the first thermal interface material layer is provided. The first thermal interface material layer has a thickness between 100 μm and 300 μm. The first thermal interface material layer is located between the patterned circuit layer and the heat-dissipating device.
Abstract:
A chip package including a lead frame, a first chip, a heat dissipation structure, and an insulating encapsulant is provided. The lead frame includes a chip pad having a first surface and a second surface opposite to the first surface and a lead connected to the chip pad. The first chip is disposed on the first surface of the chip pad and electrically connected to the lead of the lead frame and to the outside of the insulating encapsulant via the lead. The head dissipation structure is disposed on the second surface of the chip pad and includes a thermal interface material layer attached to the second surface. The insulating encapsulant encapsulates the first chip, the heat dissipation structure, and a portion of the lead frame.
Abstract:
A hetero-integrated structure includes a substrate, a die, a passivation layer, a first redistribution layer, a second redistribution layer, and connecting portions. The die is attached on the substrate. The die has an active surface and a non-active surface. The active surface has pads. The passivation layer covers sidewalls and a surface of the die to expose a surface of the pads. The first redistribution layer is located on the passivation layer and electrically connected to the pads. The second redistribution layer is located on the substrate and adjacent to the die. The connecting portions are connected to the first redistribution layer and the second redistribution layer.
Abstract:
A chip package including a lead frame, a first chip, a heat dissipation structure, and an insulating encapsulant is provided. The lead frame includes a chip pad having a first surface and a second surface opposite to the first surface and a lead connected to the chip pad. The first chip is disposed on the first surface of the chip pad and electrically connected to the lead of the lead frame and to the outside of the insulating encapsulant via the lead. The head dissipation structure is disposed on the second surface of the chip pad and includes a thermal interface material layer attached to the second surface. The insulating encapsulant encapsulates the first chip, the heat dissipation structure, and a portion of the lead frame.
Abstract:
A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
Abstract:
A package structure for a light emitting device is provided, wherein an anisotropic conductive film (ACF) and flip-chip bonding technique can be applied for bonding the light emitting device to a carrier. In addition, plural package units are stacked by performing a build-up process or a lamination process to form a full color micro-display. The package structure for the light emitting device provides simple and quick manufacturing process and is suitable for mass production. Furthermore, solutions for optical issues such as light guiding or light mixing are also provided.
Abstract:
A chip scale package structure is provided. The chip scale package structure includes an image sensor chip and a chip. The image sensor chip includes a first redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the first redistribution layer. The chip includes a plurality of through silicon via (TSV) and a second redistribution layer including a conductive wire and a conductive pad formed on the conductive wire, wherein the conductive pad is exposed from the surface of the second redistribution layer. The area of the chip is smaller than that of the image sensor chip. The second redistribution layer of the chip bonds to the first redistribution layer of the image sensor chip.
Abstract:
A package structure and a method for connecting components are provided, in which the package includes a first substrate including a first wiring and at least one first contact connecting to the first wiring; a second substrate including a second wiring and at least one second contact connecting to the second wiring, the at least one first contact and the at least one second contact partially physically contacting with each other or partially chemically interface reactive contacting with each other; and at least one third contact surrounding the at least one first contact and the at least one second contact. The first substrate and the second substrate are electrically connected with each other at least through the at least one first contact and the at least one second contact.
Abstract:
A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.