公开(公告)号：US20230028568A1

公开(公告)日：2023-01-26

申请号：US17958302

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Subhash M. Joshi ,  Jin-Sung Chun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L21/768 ,  H01L21/02 ,  H01L23/48 ,  H01L21/283 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/45

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

公开(公告)号：US09853156B2

公开(公告)日：2017-12-26

申请号：US14618414

申请日：2015-02-10

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Subhash M. Joshi ,  Jin-Sung Chun

IPC: H01L29/78 ,  H01L21/02 ,  H01L23/48 ,  H01L29/66 ,  H01L29/417 ,  H01L21/283 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/45

CPC classification number: H01L29/785 ,  H01L21/02 ,  H01L21/02532 ,  H01L21/283 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/48 ,  H01L29/16 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

公开(公告)号：US09580776B2

公开(公告)日：2017-02-28

申请号：US14860341

申请日：2015-09-21

Applicant: INTEL CORPORATION

Inventor： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC: H01L29/78 ,  H01L27/088 ,  C22C30/00 ,  H01L29/45 ,  H01L29/51 ,  H01L29/49 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

Abstract translation: 本说明书涉及制造具有非平面晶体管的微电子器件的领域。 本说明书的实施例涉及在非平面NMOS晶体管内形成栅极，其中可将NMOS功能材料（例如铝，钛和碳的组成）与含钛栅极填充物结合使用 以便于在形成非平面NMOS晶体管栅极的栅电极时使用含钨导电材料。

公开(公告)号：US10770591B2

公开(公告)日：2020-09-08

申请号：US16360309

申请日：2019-03-21

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Subhash M. Joshi ,  Jin-Sung Chun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L21/768 ,  H01L21/02 ,  H01L23/48 ,  H01L21/283 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/45 ,  H01L21/285

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

公开(公告)号：US20170117378A1

公开(公告)日：2017-04-27

申请号：US15401965

申请日：2017-01-09

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/40 ,  H01L27/092 ,  H01L29/417 ,  H01L23/522 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/78 ,  C23C14/06

CPC classification number: H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

公开(公告)号：US10283640B2

公开(公告)日：2019-05-07

申请号：US15656290

申请日：2017-07-21

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Subhash M. Joshi ,  Jin-Sung Chun

IPC: H01L29/78 ,  H01L21/02 ,  H01L23/48 ,  H01L29/66 ,  H01L29/417 ,  H01L21/283 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/45 ,  H01L21/768 ,  H01L21/285

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

公开(公告)号：US10020375B2

公开(公告)日：2018-07-10

申请号：US15726609

申请日：2017-10-06

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC: H01L29/49 ,  C23C14/06 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L23/522 ,  H01L29/78

CPC classification number: H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

公开(公告)号：US20160035724A1

公开(公告)日：2016-02-04

申请号：US14860336

申请日：2015-09-21

Applicant: INTEL CORPORATION

Inventor： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC: H01L27/088 ,  H01L29/51 ,  C22C30/00 ,  H01L29/06 ,  C22C14/00 ,  C22C21/00 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

公开(公告)号：US20180047825A1

公开(公告)日：2018-02-15

申请号：US15726609

申请日：2017-10-06

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Daniel B. Bergstrom ,  Jin-Sung Chun ,  Julia Chiu

IPC: H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L23/522 ,  C23C14/06 ,  H01L29/78

CPC classification number: H01L29/4966 ,  C22C30/00 ,  C23C14/0635 ,  C23C14/0652 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L23/5226 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of gates within non-planar NMOS transistors, wherein an NMOS work-function material, such as a composition of aluminum, titanium, and carbon, may be used in conjunction with a titanium-containing gate fill barrier to facilitate the use of a tungsten-containing conductive material in the formation of a gate electrode of the non-planar NMOS transistor gate.

公开(公告)号：US20170323966A1

公开(公告)日：2017-11-09

申请号：US15656290

申请日：2017-07-21

Applicant: Intel Corporation

Inventor： Sameer S. Pradhan ,  Subhash M. Joshi ,  Jin-Sung Chun

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417 ,  H01L29/16 ,  H01L23/48 ,  H01L21/3205 ,  H01L21/283

CPC classification number: H01L29/785 ,  H01L21/02 ,  H01L21/02532 ,  H01L21/283 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L23/48 ,  H01L29/16 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.