公开(公告)号：US09299747B1

公开(公告)日：2016-03-29

申请号：US14552205

申请日：2014-11-24

Applicant: Intel Corporation

Inventor： Fabio Pellizzer ,  Giulio Albini ,  Stephen W. Russell ,  Max F. Hineman ,  Sanjay Rangan

IPC: H01L27/115 ,  H01L27/24 ,  H01L45/00 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例描述了增加相变存储器元件的电热隔离和相关技术的电极配置。 在一个实施例中，一种装置包括多个相变存储器（PCM）元件，其中多个PCM元件中的各个PCM元件包括相变材料层，设置在相变材料层上的第一电极层和 与所述相变材料层直接接触，以及设置在所述第一电极层上并与所述第一电极层直接接触的第二电极层。 可以描述和/或要求保护其他实施例。

公开(公告)号：US20190198756A1

公开(公告)日：2019-06-27

申请号：US16292180

申请日：2019-03-04

Applicant: Intel Corporation

Inventor： Pengyuan Zheng ,  Stephen W. Russell ,  David R. Economy

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.

公开(公告)号：US09608042B2

公开(公告)日：2017-03-28

申请号：US15017552

申请日：2016-02-05

Applicant: INTEL CORPORATION

Inventor： Fabio Pellizzer ,  Giulio Albini ,  Stephen W. Russell ,  Max F. Hineman ,  Sanjay Rangan

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.

公开(公告)号：US20160233271A1

公开(公告)日：2016-08-11

申请号：US15017552

申请日：2016-02-05

Applicant: INTEL CORPORATION

Inventor： Fabio Pellizzer ,  Giulio Albini ,  Stephen W. Russell ,  Max F. Hineman ,  Sanjay Rangan

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.

Abstract translation: 本公开的实施例描述了增加相变存储器元件的电热隔离和相关技术的电极配置。 在一个实施例中，一种装置包括多个相变存储器（PCM）元件，其中多个PCM元件中的各个PCM元件包括相变材料层，设置在相变材料层上的第一电极层和 与所述相变材料层直接接触，以及设置在所述第一电极层上并与所述第一电极层直接接触的第二电极层。 可以描述和/或要求保护其他实施例。

公开(公告)号：US11349068B2

公开(公告)日：2022-05-31

申请号：US16292180

申请日：2019-03-04

Applicant: Intel Corporation

Inventor： Pengyuan Zheng ,  Stephen W. Russell ,  David R. Economy

IPC: H01L29/00 ,  H01L45/00 ,  H01L27/24

Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.

公开(公告)号：US20190044060A1

公开(公告)日：2019-02-07

申请号：US15997628

申请日：2018-06-04

Applicant: Intel Corporation

Inventor： Stephen W. Russell ,  Andrea Gotti ,  Andrea Redaelli ,  Enrico Varesi ,  Innocenzo Tortorelli ,  Lorenzo Fratin ,  Alessandro Sebastiani

IPC: H01L45/00 ,  G11C13/00

Abstract: A phase change memory (PCM) cell can include a PCM layer. A first electrode and a second electrode disposed on opposite sides of the PCM layer. The first electrode, the second electrode, or both includes a metal ceramic composite material layer disposed between an upper barrier layer and a lower barrier layer and wherein the metal ceramic composite material layer provides a corresponding electrode with an electrical resistivity of from 10 mOhm-cm to 1000 mOhm-cm.