公开(公告)号：US10545225B2

公开(公告)日：2020-01-28

申请号：US15783062

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano Parascandola ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Jens Prima ,  Robert Roessler ,  Michael Sommer

IPC: H04N13/257 ,  H01L27/146 ,  G01S17/36

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate with a conversion region configured to convert at least a portion of the electromagnetic signal into photo-generated charge carriers. A deep control electrode is formed in a trench extending into the semiconductor substrate. The deep control electrode extends deeper into the semiconductor substrate than a shallow control electrode. A control circuit is configured to apply to the deep control electrode and to the shallow control electrode varying potentials having a fixed phase relationship to each other, to generate electric potential distributions in the conversion region, by which the photo-generated charge carriers in the conversion region are directed. The directed photo-generated charge carriers are detected at at least one readout node.

公开(公告)号：US10541261B2

公开(公告)日：2020-01-21

申请号：US15783071

申请日：2017-10-13

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Robert Roessler ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Stefano Parascandola ,  Jens Prima

IPC: H01L27/146 ,  G01S17/08 ,  H01L23/48 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/101

Abstract: An optical sensor device includes a semiconductor substrate including a conversion region to convert an electromagnetic signal into photo-generated charge carriers, a read-out node configured to read-out a first portion of the photo-generated charge carriers, a control electrode, which is formed in a trench extending into the semiconductor substrate, and a doping region in the semiconductor substrate, where the doping region is adjacent to the trench, where the doping region has a doping type different from the read out node, and where the doping region has a doping concentration so that the doping region remains depleted during operation.

公开(公告)号：US11175389B2

公开(公告)日：2021-11-16

申请号：US16747084

申请日：2020-01-20

Applicant: Infineon Technologies AG ,  pmdtechnologies ag

Inventor： Stefano Parascandola ,  Henning Feick ,  Matthias Franke ,  Dirk Offenberg ,  Jens Prima ,  Robert Roessler ,  Michael Sommer

IPC: H01L27/146 ,  G01S7/4914 ,  G01S7/4915 ,  G01S17/36 ,  H04N13/257

Abstract: An optical sensor device configured to detect a time of flight of an electromagnetic signal includes a semiconductor substrate having a main surface and a conversion region configured to convert at least a fraction of the electromagnetic signal into photo-generated charge carriers; a first control electrode formed in a trench extending from the main surface into the semiconductor substrate; a second control electrode disposed directly or indirectly on the main surface; a control circuit configured to apply a varying first potential to the first control electrode and to apply a varying second potential to the second control electrode, where the varying second potential has a fixed phase relationship to the first varying potential, to generate electric potential distributions in the conversion region to direct the photo-generated charge carriers; and a readout node arranged in the semiconductor substrate and configured to detect the directed photo-generated charge carriers.

公开(公告)号：US10854669B2

公开(公告)日：2020-12-01

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US09905609B2

公开(公告)日：2018-02-27

申请号：US15637478

申请日：2017-06-29

Applicant: Infineon Technologies AG

Inventor： Dirk Offenberg ,  Henning Feick ,  Stefano Parascandola

IPC: H01L27/00 ,  H01L27/148 ,  H01L27/146 ,  G01S7/486 ,  H04N5/369

CPC classification number: H01L27/14856 ,  G01S7/4865 ,  G01S7/4914 ,  H01L27/14601 ,  H01L27/14683 ,  H04N5/369

Abstract: Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

公开(公告)号：US09882600B2

公开(公告)日：2018-01-30

申请号：US14172925

申请日：2014-02-05

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H04B1/00 ,  H04B1/44 ,  H01L21/324 ,  H01L29/78 ,  H01L29/10

CPC classification number: H04B1/44 ,  H01L21/324 ,  H01L29/1079 ,  H01L29/78

Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

公开(公告)号：US20170358697A1

公开(公告)日：2017-12-14

申请号：US15688356

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  G01S7/491 ,  H01L27/148

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

公开(公告)号：US09659992B2

公开(公告)日：2017-05-23

申请号：US14186390

申请日：2014-02-21

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14687 ,  H01L27/14806

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

公开(公告)号：US20200006418A1

公开(公告)日：2020-01-02

申请号：US16566171

申请日：2019-09-10

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US10008621B2

公开(公告)日：2018-06-26

申请号：US15688356

申请日：2017-08-28

Applicant: Infineon Technologies AG

Inventor： Thomas Bever ,  Henning Feick ,  Dirk Offenberg ,  Stefano Parascandola ,  Ines Uhlig ,  Thoralf Kautzsch ,  Dirk Meinhold ,  Hanno Melzner

IPC: H01L31/0352 ,  H01L27/148 ,  G01S7/491

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.