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1.发明申请PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 审中-公开形成图案的方法以及用于形成电阻膜的组合物公开(公告)号：US20140371466A1
公开(公告)日：2014-12-18
申请号：US14477306
申请日：2014-09-04
Applicant: JSR Corporation
Inventor： Yushi Matsumura , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
CPC classification number: G03F7/027 , B44C1/22 , C07D407/12 , C07D487/04 , G03F7/004 , G03F7/11 , H05K1/00
Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。
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公开(公告)号：US20220146940A1
公开(公告)日：2022-05-12
申请号：US17584456
申请日：2022-01-26
Applicant: JSR CORPORATION
Inventor： Tatsuya KASAI , Tomohiro Matsuki , Yusuke Anno , Tomoaki Seko , Tatsuya Sakai
IPC: G03F7/11 , C08G77/50 , C08G77/26 , C09D183/08 , H01L21/027
Abstract: A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R4 represents a hydrogen atom.
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公开(公告)号：US08993223B2
公开(公告)日：2015-03-31
申请号：US14158160
申请日：2014-01-17
Applicant: JSR Corporation
Inventor： Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
CPC classification number: G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。
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公开(公告)号：US20230053159A1
公开(公告)日：2023-02-16
申请号：US17950251
申请日：2022-09-22
Applicant: JSR Corporation
Inventor： Tomoaki Seko , Yusuke Anno , Akitaka Nii
IPC: G03F7/11 , C09D183/08 , C08G77/26 , H01L21/027
Abstract: A resist underlayer film-forming composition includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents a group represented by formula (2); a is an integer of 1 to 3; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2; and a sum of a and b is no greater than 3. R2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; n is 1 or 2; R3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; and * denotes a site bonding to the silicon atom in the formula (1). The composition is suitable for lithography with an electron beam or extreme ultraviolet ray.
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公开(公告)号：US10216090B2
公开(公告)日：2019-02-26
申请号：US15082389
申请日：2016-03-28
Applicant: JSR CORPORATION
Inventor： Kanako Meya , Yusuke Anno , Ken Maruyama , Shuto Mori
IPC: G03F7/40 , H01L21/027 , G03F7/039 , G03F7/32
Abstract: A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.
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Patent Agency Ranking
公开(公告)号：US20190025699A1
公开(公告)日：2019-01-24
申请号：US16142242
申请日：2018-09-26
Applicant: JSR CORPORATION
Inventor： Junya Suzuki , Tomoaki Seko , Yusuke Anno
IPC: G03F7/11 , G03F7/09 , C09D183/04 , G03F7/16 , H01L21/308
Abstract: A film-forming material for a resist process includes: a siloxane polymer component including at least two selected from the group consisting of a sulfur atom, a nitrogen atom, a boron atom and a phosphorus atom; and organic solvent. The siloxane polymer component preferably has a formulation represented by formula (1). R1 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom. R2 represents a monovalent organic group comprising at least one of a sulfur atom and a nitrogen atom, a hydrogen atom, a hydroxy group, or a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms. A pattern-forming method includes: applying the film-forming material for a resist process onto a substrate to form a silicon-containing film; forming a pattern using the silicon-containing film as a mask; and removing the silicon-containing film.
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7.发明授权公开(公告)号：US09046769B2
公开(公告)日：2015-06-02
申请号：US14477306
申请日：2014-09-04
Applicant: JSR Corporation
Inventor： Yushi Matsumura , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
IPC: G03F7/027 , G03F7/11 , B44C1/22 , C07D407/12 , C07D487/04 , H05K1/00 , G03F7/004
CPC classification number: G03F7/027 , B44C1/22 , C07D407/12 , C07D487/04 , G03F7/004 , G03F7/11 , H05K1/00
Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
Abstract translation: 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。
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8.发明申请公开(公告)号：US20230069221A1
公开(公告)日：2023-03-02
申请号：US17961611
申请日：2022-10-07
Applicant: JSR CORPORATION
Inventor： Tomoaki SEKO , Tatsuya Sakai , Kazunori Sakai , Yusuke Anno
Abstract: A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.
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公开(公告)号：US10025188B2
公开(公告)日：2018-07-17
申请号：US15440299
申请日：2017-02-23
Applicant: JSR Corporation
Inventor： Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
CPC classification number: G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
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公开(公告)号：US09329478B2
公开(公告)日：2016-05-03
申请号：US13739375
申请日：2013-01-11
Applicant: JSR CORPORATION
Inventor： Yusuke Anno , Takashi Mori , Satoshi Dei , Kazunori Takanashi , Yushi Matsumura , Shin-ya Minegishi
CPC classification number: G03F7/0757 , C08K5/34 , G03F7/0752 , G03F7/091 , G03F7/20 , H01L21/02126 , H01L21/02216 , C08L83/04
Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.
Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。
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