公开(公告)号：US11846860B2

公开(公告)日：2023-12-19

申请号：US18164809

申请日：2023-02-06

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Toshihide Jinnai ,  Isao Suzumura ,  Hajime Watakabe ,  Ryo Onodera

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US12191397B2

公开(公告)日：2025-01-07

申请号：US17522258

申请日：2021-11-09

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Hajime Watakabe ,  Takuo Kaitoh ,  Ryo Onodera

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.

公开(公告)号：US12148840B2

公开(公告)日：2024-11-19

申请号：US17542515

申请日：2021-12-06

Applicant: Japan Display Inc.

Inventor： Kentaro Miura ,  Hajime Watakabe ,  Ryo Onodera

IPC: H01L29/786 ,  H01L29/66

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a first insulating layer above a polycrystalline silicon semiconductor, forming an oxide semiconductor on the first insulating layer, forming a second insulating layer on the oxide semiconductor, forming contact holes penetrating to the polycrystalline silicon semiconductor in insulating layers including the first insulating layer and the second insulating layer, forming a metal film on the second insulating layer, forming a patterned resist on the metal film, etching the metal film using the resist as a mask, performing ion implantation into the oxide semiconductor without removing the resist, and removing the resist.

公开(公告)号：US11640088B2

公开(公告)日：2023-05-02

申请号：US17159154

申请日：2021-01-27

Applicant: Japan Display Inc.

Inventor： Ryo Onodera ,  Hajime Watakabe ,  Akihiro Hanada

IPC: G02F1/1362 ,  G02F1/1335 ,  G02F1/1368

Abstract: A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.

公开(公告)号：US12072595B2

公开(公告)日：2024-08-27

申请号：US18503351

申请日：2023-11-07

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Toshihide Jinnai ,  Isao Suzumura ,  Hajime Watakabe ,  Ryo Onodera

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136277 ,  G02F1/136286 ,  H01L29/78633 ,  H01L29/78672 ,  H10K50/865 ,  H10K59/131

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US11721765B2

公开(公告)日：2023-08-08

申请号：US17499908

申请日：2021-10-13

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L21/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  G02F1/1368

CPC classification number: H01L29/78627 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/426 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675 ,  G02F1/1368 ,  H01L2029/42388

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US11630361B2

公开(公告)日：2023-04-18

申请号：US17471881

申请日：2021-09-10

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Toshihide Jinnai ,  Isao Suzumura ,  Hajime Watakabe ,  Ryo Onodera

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US11181792B2

公开(公告)日：2021-11-23

申请号：US16787054

申请日：2020-02-11

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US12213351B2

公开(公告)日：2025-01-28

申请号：US17570396

申请日：2022-01-07

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Toshinari Sasaki ,  Ryo Onodera

IPC: H10K59/124 ,  H10K59/121

Abstract: According to one embodiment, in a first concentration of an impurity element contained in a first impurity region, a second concentration of the impurity element contained in a second impurity region, a third concentration of the impurity element contained in a third impurity region, and a fourth concentration of the impurity element contained in a high-concentration impurity region, the third concentration is equal to the fourth concentration, the third concentration is higher than the first concentration, and the first concentration is higher than the second concentration.

公开(公告)号：US12166131B2

公开(公告)日：2024-12-10

申请号：US18328788

申请日：2023-06-05

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.