公开(公告)号：US20220221954A1

公开(公告)日：2022-07-14

申请号：US17557757

申请日：2021-12-21

Applicant: Japan Display Inc.

Inventor： Tomoyuki ITO ,  Kazuki MATSUNAGA ,  Shigesumi ARAKI ,  Kazuhide MOCHIZUKI

IPC: G06F3/042 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  H01L27/146 ,  G06F3/041

Abstract: According to one embodiment, a liquid crystal display device comprises first and second substrates and a liquid crystal layer. The first substrate includes a base member, a sensor between the base member and the liquid crystal layer, a collimation layer between the sensor and the liquid crystal layer, an insulating layer between the sensor and the collimation layer, an insulating layer, and a light shielding layer between the sensor and the base member. The sensor is configured to output a signal corresponding to light incident from a liquid crystal layer side. The light shielding layer overlaps with an outer peripheral part of the first collimation layer.

公开(公告)号：US20230253506A1

公开(公告)日：2023-08-10

申请号：US18163286

申请日：2023-02-02

Applicant: Japan Display Inc.

Inventor： Ryo ONODERA ,  Akihiro HANADA ,  Takuo KAITOH ,  Tomoyuki ITO

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368

Abstract: According to one embodiment, a semiconductor device includes a first gate electrode formed to be integrated with a scanning line, an oxide semiconductor layer, a first signal line and a second signal line in contact with the oxide semiconductor layer, and a second gate electrode disposed opposing the first gate electrode with the oxide semiconductor layer interposed therebetween, and connected to the first gate electrode, wherein the second gate electrode does not overlap the first signal line, but overlaps the second signal line.

公开(公告)号：US20230127181A1

公开(公告)日：2023-04-27

申请号：US17974601

申请日：2022-10-27

Applicant: Japan Display Inc.

Inventor： Tomoyuki ITO

IPC: G06V40/13 ,  G06V10/143 ,  G06V10/147

Abstract: According to one embodiment, an optical sensor includes a display panel and a sensor panel under at least a part of the display panel. The display panel includes pixels arranged two-dimensionally. The sensor panel includes a sensor layer including sensor elements arranged two-dimensionally, a collimator layer on the sensor layer including openings, and lenses on the collimator layer. A first number of openings in the openings are on one of the sensor elements. The first number of lenses in the lenses are on the first number of openings. The first number of lenses are at positions different for each of the sensor elements.

公开(公告)号：US20220229329A1

公开(公告)日：2022-07-21

申请号：US17578723

申请日：2022-01-19

Applicant: Japan Display Inc.

Inventor： Tomoyuki ITO ,  Kazuki MATSUNAGA ,  Shigesumi ARAKI ,  Kazuhide MOCHIZUKI

IPC: G02F1/1335 ,  G02F1/1343 ,  G02F1/1333 ,  G06V40/13

Abstract: According to one embodiment, a display device comprises a collimating layer including first to third openings, first to third color filters overlaid on the first to third openings, respectively, a first sensor outputting a first detection signal corresponding to light made incident through the first opening and the first color filter, a second sensor outputting a second detection signal corresponding to light made incident through the second opening and the second color filter, and a third sensor outputting a third detection signal corresponding to light made incident through the third opening and the third color filter.

公开(公告)号：US20200259020A1

公开(公告)日：2020-08-13

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20230317853A1

公开(公告)日：2023-10-05

申请号：US18328788

申请日：2023-06-05

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

CPC classification number: H01L29/78627 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869 ,  H01L27/127 ,  H01L21/02178 ,  H01L21/02565 ,  H01L21/426 ,  H01L21/47573 ,  H01L21/47635 ,  H01L29/66969 ,  H01L27/1225 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20230005291A1

公开(公告)日：2023-01-05

申请号：US17940239

申请日：2022-09-08

Applicant: Japan Display Inc.

Inventor： Makoto UCHIDA ,  Takanori TSUNASHIMA ,  Masahiro TADA ,  Tomoyuki ITO ,  Takashi NAKAMURA

IPC: G06V40/13 ,  H01L27/146

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

公开(公告)号：US20220302227A1

公开(公告)日：2022-09-22

申请号：US17654266

申请日：2022-03-10

Applicant: Japan Display Inc.

Inventor： Tomoyuki ITO ,  Jin HIROSAWA

IPC: H01L27/32 ,  G02B27/30 ,  G06V10/147

Abstract: According to one embodiment, a detection device comprises a base, a sensor layer, a collimator, a plurality of lenses, and a spacer. The sensor layer is placed on the base and includes a plurality of sensors which output detection signals corresponding to incident light. The collimator layer is placed on the sensor layer and includes a collimator having a plurality of openings which overlap the sensors, respectively. The plurality of lenses are placed on the collimator layer and overlap the openings, respectively. The spacer protrudes more than the lenses in a stacking direction of the base, the sensor layer and the collimator layer.

公开(公告)号：US20220029026A1

公开(公告)日：2022-01-27

申请号：US17499908

申请日：2021-10-13

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/49 ,  H01L21/426 ,  H01L29/423 ,  H01L29/24 ,  H01L21/4757 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US20210012082A1

公开(公告)日：2021-01-14

申请号：US17033040

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Makoto UCHIDA ,  Takanori TSUNASHIMA ,  Masahiro TADA ,  Tomoyuki ITO ,  Takashi NAKAMURA

IPC: G06K9/00 ,  H01L27/146

Abstract: A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.