Abstract:
Separation of wirings formed on an organic passivation film is prevented in an organic EL display device or a liquid crystal display device. The organic EL display device includes a TFT formed on a substrate and an organic passivation film formed to cover the TFT. An intermediate film containing SiO or SiN is formed to cover the organic passivation film. An insulation film formed with an organic material is formed on the intermediate film. A reflective electrode is formed on the intermediate film. The reflective electrode is connected to the TFT via a through-hole formed in the organic passivation film and a through-hole formed in the intermediate film.
Abstract:
An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first bather layer which contains AlOx is formed between the substrate and the TFT.
Abstract:
The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
Abstract:
An organic EL display device has a semiconductor circuit substrate comprising a TFT and an organic passivation layer thereon. An AlO layer is formed over the organic passivation layer, and an electrode layer is formed on the AlO layer. The electrode layer connects with TFT via a through hole formed in the AlO layer and in the organic passivation layer.
Abstract:
A manufacturing method of an organic electroluminescence display device including a device substrate provided with a plurality of pixel electrodes which have a gap part therebetween, a common electrode disposed opposite to the plurality of pixel electrodes, a light emitting layer provided over the plurality of pixel electrodes, and a bank layer provided in the gap part of the plurality of pixel electrodes, the method comprising forming a cover layer including a concave region to fit into a convex shaped part of the bank layer at a support substrate, forming a color filter layer facing the pixel electrode to the concave region, disposing a surface of the color filter layer on the device substrate so that the concave region fits into a convex shaped part, and attaching the cover layer and the color filter layer on the device substrate by peeling the cover layer from the support substrate.
Abstract:
A sealing substrate is arranged to oppositely face an element substrate on which organic EL layers are formed in a matrix array with a sealing material sandwiched therebetween. A gel-state desiccant is filled in an inner space surrounded by the element substrate, the sealing substrate and the sealing material. Since the gel-state desiccant is in a gel state, the gel-state desiccant is flexibly filled in the inner space of the organic EL display device thus completely eliminating a gap. Since the inner space is filled with the gel-state desiccant, moisture hardly intrudes into the inner-space from the outside and, at the same time, a mechanical strength of the organic EL display device is also enhanced.
Abstract:
The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
Abstract:
A method for manufacturing a display device includes providing an array substrate, providing a counter substrate to be opposed to the array substrate, applying a seal material on at least one of the array substrate and the counter substrate to seamlessly surround the display region, applying a filling material on a region surrounded by the seal material, and bonding the array substrate and the counter substrate together. In the applying the seal material, the seal material is provided to include a first region and a second region having a sectional area orthogonal to a length direction of disposition smaller than a sectional area of the first region. In the bonding the array substrate and the counter substrate together, the filling material is caused to leak to region between the second region and one of the array substrate and the counter substrate.
Abstract:
A display device includes a first substrate having a first step part formed in a frame area on a periphery of a display area, a second substrate arranged facing the first substrate, and a filler material filled between the first substrate in one part of the display area and the frame area, and the second substrate, a periphery edge part being located in a range from the first step part to an end part of the first substrate and the second substrate.
Abstract:
The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.