Controlling warping in integrated circuit devices
    1.
    发明授权
    Controlling warping in integrated circuit devices 有权
    集成电路器件控制翘曲

    公开(公告)号:US07408246B2

    公开(公告)日:2008-08-05

    申请号:US11095929

    申请日:2005-03-31

    IPC分类号: H01L23/495

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES
    2.
    发明申请
    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES 有权
    控制集成电路设备中的加热

    公开(公告)号:US20110250742A1

    公开(公告)日:2011-10-13

    申请号:US13041674

    申请日:2011-03-07

    IPC分类号: H01L21/3205

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES
    3.
    发明申请
    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES 有权
    控制集成电路设备中的加热

    公开(公告)号:US20090311853A1

    公开(公告)日:2009-12-17

    申请号:US12546083

    申请日:2009-08-24

    IPC分类号: H01L21/3205

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    Controlling warping in integrated circuit devices
    4.
    发明授权
    Controlling warping in integrated circuit devices 有权
    集成电路器件控制翘曲

    公开(公告)号:US08133799B2

    公开(公告)日:2012-03-13

    申请号:US13041674

    申请日:2011-03-07

    IPC分类号: H01L21/30 H01L21/46

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    Controlling warping in integrated circuit devices
    5.
    发明授权
    Controlling warping in integrated circuit devices 有权
    集成电路器件控制翘曲

    公开(公告)号:US07923347B2

    公开(公告)日:2011-04-12

    申请号:US12546083

    申请日:2009-08-24

    IPC分类号: H01L21/30 H01L21/46

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    Controlling warping in integrated circuit devices
    6.
    发明授权
    Controlling warping in integrated circuit devices 有权
    集成电路器件控制翘曲

    公开(公告)号:US07598602B2

    公开(公告)日:2009-10-06

    申请号:US12163453

    申请日:2008-06-27

    IPC分类号: H01L23/495

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。

    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES
    7.
    发明申请
    CONTROLLING WARPING IN INTEGRATED CIRCUIT DEVICES 有权
    控制集成电路设备中的加热

    公开(公告)号:US20080258275A1

    公开(公告)日:2008-10-23

    申请号:US12163453

    申请日:2008-06-27

    IPC分类号: H01L23/495 H01L21/50

    摘要: Techniques for integrated circuit device fabrication are provided. In one aspect, an integrated circuit device comprises a base, at least one die attached to the base, and a counterbalancing layer on at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die. In another aspect, warping of an integrated circuit device comprising at least one die attached to a base is controlled by applying a counterbalancing layer to at least a portion of at least one side of the base adapted to compensate for at least a portion of a thermal expansion difference existing between the base and the die.

    摘要翻译: 提供了集成电路器件制造技术。 在一个方面,一种集成电路装置包括基座,至少一个连接到基座的管芯,以及基座的至少一侧的至少一部分上的平衡层,其适于补偿至少一部分热膨胀 基座和模具之间存在差异。 在另一方面,包括至少一个连接到基座的管芯的集成电路器件的翘曲通过将平衡层施加到所述基底的至少一个侧面的至少一部分上来进行控制,该至少一个侧面适于补偿至少一部分热 基地和死亡之间存在扩张差异。