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29 条记录 (耗时 0.026 秒)

    MOLECULE DETECTING DEVICE AND MOLECULE DETECTING METHOD
    3.
    发明申请
    MOLECULE DETECTING DEVICE AND MOLECULE DETECTING METHOD 有权

    公开(公告)号：US20210278365A1

    公开(公告)日：2021-09-09

    申请号：US17017284

    申请日：2020-09-10

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Ko YAMADA ,  Atsunobu ISOBAYASHI ,  Tatsuro SAITO

    IPC分类号： G01N27/414 ,  G01N1/40 ,  G01N33/00

    摘要： According to one embodiment, a molecule detecting device includes a first detector including a first detecting element configured to detect a first molecular group in a gaseous sample, a second detector including a second detecting element configured to detect a second molecular group having a concentration higher than the first molecular group in a gaseous sample, and an absorber including an adsorbing material provided between the first detector and the second detector and configured to adsorb at least the first molecular group.

    GRAPHENE TRANSISTOR
    6.
    发明公开
    GRAPHENE TRANSISTOR 审中-公开

    公开(公告)号：US20230246074A1

    公开(公告)日：2023-08-03

    申请号：US17822905

    申请日：2022-08-29

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Hideyuki TOMIZAWA ,  Akiko YUZAWA ,  Yoshiaki SUGIZAKI ,  Tatsuro SAITO

    IPC分类号： H01L29/16 ,  H01L29/66 ,  H01L21/02

    CPC分类号： H01L29/1606 ,  H01L21/02527 ,  H01L29/66037

    摘要： A graphene transistor includes an insulating film extending in a first direction and a second direction, the second direction crossing the first direction; graphene located on the insulating film, the graphene including a first opening and a second opening separated from each other in the first direction; a first electrode, the first electrode contacting an upper surface of the graphene, contacting an edge of the graphene positioned in the first opening, and contacting the insulating film in the first opening; and a second electrode, the second electrode contacting the upper surface of the graphene, contacting an edge of the graphene positioned in the second opening, and contacting the insulating film in the second opening.

    SENSOR, DETECTION METHOD, REAGENT AND KIT
    7.
    发明申请
    SENSOR, DETECTION METHOD, REAGENT AND KIT 有权

    公开(公告)号：US20220081702A1

    公开(公告)日：2022-03-17

    申请号：US17199380

    申请日：2021-03-11

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tatsuro SAITO ,  Yoshiaki SUGIZAKI

    IPC分类号： C12Q1/46

    摘要： According to one embodiment, a sensor for detecting a target substance in gas a sample includes a target substance uptake unit that brings an acetylcholine aqueous solution into contact with a gas sample to dissolve a target substance in the gas sample into the acetylcholine aqueous solution, a reaction unit that holds acetylcholinesterase and brings the solution delivered from the target substance uptake unit into contact with the acetylcholinesterase, and a detection unit that measures a change in an amount of acetylcholine decomposition product produced in the solution delivered from the reaction unit.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160268210A1

    公开(公告)日：2016-09-15

    申请号：US14842545

    申请日：2015-09-01

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tatsuro SAITO ,  Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Akihiro KAJITA ,  Tadashi SAKAI

    IPC分类号： H01L23/532 ,  H01L21/768

    CPC分类号： H01L23/53276 ,  H01L21/76861 ,  H01L21/76876 ,  H01L21/76885

    摘要： According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to fifth catalyst regions arranged along a first direction in order of the first to fifth catalyst regions. The first, third and fifth catalyst regions include upper surfaces higher than those of the second and fourth catalyst regions. Adjacent ones of the first to fifth catalyst regions are in contact with each other. A distance between the first and the third catalyst region and a distance between the third and fifth catalyst region are greater than a mean free path of graphene. The graphene layer includes a first graphene layer on the second catalyst region and a second graphene layer on the fourth catalyst region.

    摘要翻译： 根据一个实施例，公开了一种半导体器件。 该装置包括各自包括催化剂层和其上的石墨烯层的互连。 催化剂层包括按照第一至第五催化剂区域的顺序沿第一方向布置的第一至第五催化剂区域。 第一，第三和第五催化剂区域包括高于第二和第四催化剂区域的上表面。 相邻的第一至第五催化剂区域彼此接触。 第一和第三催化剂区域之间的距离以及第三和第五催化剂区域之间的距离大于石墨烯的平均自由程。 石墨烯层包括第二催化剂区上的第一石墨烯层和第四催化剂区上的第二石墨烯层。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140084250A1

    公开(公告)日：2014-03-27

    申请号：US13846850

    申请日：2013-03-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Makoto WADA ,  Yuichi YAMAZAKI ,  Akihiro KAJITA ,  Atsunobu ISOBAYASHI ,  Tatsuro SAITO

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66977 ,  B82Y30/00 ,  C01B32/186 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/932 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.

    摘要翻译： 根据一个实施例，半导体器件包括形成在其上形成有并以布线图案形成的半导体元件的基板上的催化剂底层，形成在催化剂下层上的宽度比其宽度窄的催化剂金属层 催化剂底层，以及生长在催化剂金属层的侧壁上的石墨烯层，其被设置为生长来源并形成以包围催化剂金属层。