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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20150034985A1

    公开(公告)日：2015-02-05

    申请号：US14153160

    申请日：2014-01-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Miyuki SHIMOJUKU ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/60 ,  H01L33/50

    CPC分类号： H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/50 ,  H01L2933/0033

    摘要： According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.

    摘要翻译： 根据一个实施例，光学层具有比半导体层更大的平面尺寸。 光学层对发光层的发射光是透射的。 第一绝缘膜设置在从第一表面延续的半导体层的侧表面上。 金属膜包括经由第一绝缘膜覆盖半导体层的侧表面的第一反射部分。 金属膜包括在半导体层的侧表面周围的区域中与光学层相对的第二反射部分，并且从第一反射部分朝向与半导体层的侧表面相对的一侧延伸。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT 有权
    半导体发光器件和光源单元

    公开(公告)号：US20130313589A1

    公开(公告)日：2013-11-28

    申请号：US13779690

    申请日：2013-02-27

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC分类号： H01L33/48

    CPC分类号： H01L33/48 ,  H01L33/56 ,  H01L2224/18

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.

    摘要翻译： 根据实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和树脂层。 半导体层具有与第一面相反的第一面和第二面，并且包括发光层。 p侧电极设置在第二面侧的半导体层上。 n侧电极设置在第二面侧的半导体层上。 树脂层设置在第一面上，透射从发光层发射的光，树脂层包括与第一面相对的顶表面和沿着第一面的外边缘设置的四个侧面，并连接到顶表面 所述树脂层包括散射从所述发光层发射的光的散射物质。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20170054065A1

    公开(公告)日：2017-02-23

    申请号：US15059754

    申请日：2016-03-03

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/62 ,  H01L33/36 ,  H01L33/50

    CPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/505 ,  H01L33/54

    摘要： According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括包括第一半导体层，第二半导体层，发光层，第一表面和第二表面的半导体层; 包括第一n侧电极和第二n侧电极的n侧电极; 第一接触单元; 第二接触单元; n侧互连单元; p侧电极; 和绝缘膜。 绝缘膜包括第一绝缘部分，第二绝缘部分，第三绝缘部分和第四绝缘部分。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20160268478A1

    公开(公告)日：2016-09-15

    申请号：US14830039

    申请日：2015-08-19

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hideyuki TOMIZAWA ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideto FURUYAMA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L33/40

    CPC分类号： H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50

    摘要： According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

    摘要翻译： 根据一个实施例，p侧电极设置在第二半导体层上。 绝缘膜设置在p侧电极上。 n侧电极包括第一部分，第二部分和第三部分。 第一部分设置在第一半导体层的侧面上。 第二部分设置在第一n侧区域中。 第三部分经由绝缘膜与p侧电极重叠，并将第一部分和第二部分彼此连接。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20150364664A1

    公开(公告)日：2015-12-17

    申请号：US14822277

    申请日：2015-08-10

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke AKIMOTO ,  Yoshiaki SUGIZAKI ,  Hideyuki TOMIZAWA ,  Masanobu ANDO ,  Akihiro KOJIMA ,  Gen WATARI ,  Naoya USHIYAMA ,  Tetsuro KOMATSU ,  Miyoko SHIMADA ,  Hideto FURUYAMA

    IPC分类号： H01L33/62 ,  H01L33/50 ,  H01L33/54

    CPC分类号： H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16

    摘要： A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

    摘要翻译： 半导体发光器件包括半导体层，第一电极，第二电极，第一互连部分，第二互连部分和可变电阻膜。 半导体层包括发光层。 第一电极设置在第二表面上的发射区域中。 第二电极设置在第二表面上的不发射区域中。 第一互连部分设置在第一电极上并电连接到第一电极。 第二互连部分设置在第二电极和第一电极上并电连接到第二电极。 非线性电阻膜设置成与第一电极和第二互连部分在第一电极和第二互连部分之间接触。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140231843A1

    公开(公告)日：2014-08-21

    申请号：US13848134

    申请日：2013-03-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke AKIMOTO ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC分类号： H01L33/50

    CPC分类号： H01L33/50 ,  H01L33/44 ,  H01L33/508

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The fluorescent material layer includes a plurality of fluorescent materials and a bonding material integrating the fluorescent materials. The fluorescent material layer includes a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials. The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极和荧光材料层。 半导体层具有与第一表面相反一侧的第一表面和第二表面，并且包括发光层。 荧光材料层包括多个荧光材料和整合荧光材料的接合材料。 荧光材料层包括设置在整个第一表面上并且具有比荧光材料的尺寸更大的厚度的下层部分和部分地设置在下层部分上并具有较大厚度和较大宽度的上层部分 比荧光材料的大小。 荧光材料不存在于未设置上层部分的下层部分的一部分上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE 有权
    半导体发光器件和发光器件

    公开(公告)号：US20140231842A1

    公开(公告)日：2014-08-21

    申请号：US13848117

    申请日：2013-03-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke AKIMOTO ,  Akihiro KOJIMA ,  Miyoko SHIMADA ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC分类号： H01L33/50

    CPC分类号： H01L33/507 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating film, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a second insulating film and a fluorescent material layer. The first electrode is provided in an emitting region of the semiconductor layer. The first electrode, the first insulating film, the first interconnection layer, the second interconnection layer, and the second insulating layer are configured to transmit radiated light of the light emitting layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘膜，第一互连层，第二互连层，第一金属柱，第二金属柱，第二金属柱 绝缘膜和荧光材料层。 第一电极设置在半导体层的发射区域中。 第一电极，第一绝缘膜，第一互连层，第二互连层和第二绝缘层被配置为透射发光层的辐射光。