公开(公告)号：US20220246640A1

公开(公告)日：2022-08-04

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi SAWA ,  Kazuhiro MATSUO ,  Kazuhisa MATSUDA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Shinji MORI ,  Masayuki TANAKA ,  Kenichiro TORATANI ,  Atsushi TAKAHASHI ,  Shouji HONDA

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11519

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20240074172A1

公开(公告)日：2024-02-29

申请号：US18181821

申请日：2023-03-10

Applicant: Kioxia Corporation

Inventor： Keiichi SAWA ,  Tomoyuki TAKEMOTO ,  Yuta KAMIYA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Tatsunori ISOGAI

IPC: H10B41/27 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor storage device includes a lower electrode layer, a lower insulator, an upper electrode layer and an upper insulator along a first direction. The device further includes a first insulator provided on a side of a second direction of the upper electrode layer, and a second insulator provided between the upper electrode layer and the lower/upper/first insulator. The device further includes a charge storage layer, a third insulator and a semiconductor layer sequentially provided on a side of the second direction of the first insulator. A side face of the first insulator on a side of the upper electrode layer has a convex shape, the charge storage layer includes a first portion having a first thickness, and a second portion having a second thickness less than the first thickness, and the first portion is in contact with the first insulator.

公开(公告)号：US20220336492A1

公开(公告)日：2022-10-20

申请号：US17850699

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Yuta SAITO ,  Shinji MORI ,  Atsushi TAKAHASHI ,  Toshiaki YANASE ,  Keiichi SAWA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/02 ,  H01L29/04

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US20220077183A1

公开(公告)日：2022-03-10

申请号：US17197305

申请日：2021-03-10

Applicant: Kioxia Corporation

Inventor： Takaumi MORITA ,  Hisashi OKUCHI ,  Keiichi SAWA ,  Hiroyuki YAMASHITA ,  Toshiaki YANASE ,  Tsubasa IMAMURA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

Abstract: In one embodiment, a semiconductor device includes a substrate, and a plurality of electrode layers provided separately from each other in a first direction perpendicular to a surface of the substrate. The device further includes a first insulator, a charge storage layer, a second insulator, a first semiconductor region including silicon, and a second semiconductor region including silicon and carbon, which are provided in order on side faces of the electrode layers, wherein an interface between the first semiconductor region and the second insulator includes fluorine.

公开(公告)号：US20240315036A1

公开(公告)日：2024-09-19

申请号：US18593502

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Shin ISHIMATSU ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Hiroyuki YAMASHITA ,  Wataru MATSUURA ,  Daisuke NISHIDA ,  Junichi KANEYAMA ,  Tomoyuki TAKEMOTO

IPC: H10B43/35 ,  G11C16/04 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  G11C16/0483 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: According to one embodiment, a semiconductor memory device includes a stacked film in which a plurality of silicon oxide layers, one of which having a film density of 2.3 g/cm3 or more, and a plurality of conductive layers, are alternately stacked in a first direction, and a memory pillar that penetrates the stacked film in the first direction, wherein a plurality of memory cells is provided in the memory pillar.

公开(公告)号：US20230309310A1

公开(公告)日：2023-09-28

申请号：US17930889

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA ,  Satoshi NAGASHIMA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Shota KASHIYAMA ,  Keiichi SAWA ,  Junichi KANEYAMA

IPC: H01L27/1158 ,  G11C5/06 ,  H01L27/1157

CPC classification number: H01L27/1157 ,  G11C5/063 ,  H01L27/1158

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

公开(公告)号：US20210013225A1

公开(公告)日：2021-01-14

申请号：US16809887

申请日：2020-03-05

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Atsushi TAKAHASHI ,  Toshiaki YANASE ,  Keiichi SAWA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L29/04 ,  H01L21/02

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

公开(公告)号：US20230048781A1

公开(公告)日：2023-02-16

申请号：US17695280

申请日：2022-03-15

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA

IPC: H01L21/02 ,  H01L21/8234 ,  H01L27/088

Abstract: A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.

公开(公告)号：US20220336493A1

公开(公告)日：2022-10-20

申请号：US17854072

申请日：2022-06-30

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Keiichi SAWA ,  Kazuhisa MATSUDA ,  Kazuhiro MATSUO ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L21/324 ,  H01L23/532 ,  H01L21/28

Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.

公开(公告)号：US20240324227A1

公开(公告)日：2024-09-26

申请号：US18593379

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASHITA ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Junichi KANEYAMA ,  Shin ISHIMATSU ,  Daisuke NISHIDA ,  Tomoyuki TAKEMOTO ,  Wataru MATSUURA

IPC: H10B43/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/27

Abstract: A semiconductor device includes a stack including a conductor layer and an insulator layer, a block insulating layer, a channel layer, a charge storage layer provided between the block insulating layer and the channel layer, and a tunnel layer provided between the charge storage layer and the channel layer, where the charge storage layer includes a first charge storage layer containing Si, N and at least one of Al, Mo, Nb, Hf, Zr, Ti, B, or P, a second charge storage layer containing Si and N, in which Si is contained at a second concentration higher than a first concentration that is a concentration of Si in the first charge storage layer, and provided between the first charge storage layer and the tunnel layer, and a dielectric layer containing at least one of silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN), or aluminum oxide (AlOx), and provided between the first charge storage layer and the second charge storage layer.