公开(公告)号：US20240431104A1

公开(公告)日：2024-12-26

申请号：US18745594

申请日：2024-06-17

Applicant: Kioxia Corporation

Inventor： Junichi KANEYAMA ,  Tatsunori ISOGAI

IPC: H10B43/27 ,  H10B43/10 ,  H10B43/35

Abstract: A semiconductor storage device includes a stacked body in which electrode layers and first insulation layers are alternately stacked in a first direction. A semiconductor layer extends through the stacked body in the first direction. A second insulation layer is provided between the stacked body and the semiconductor layer. A third insulation layer is provided between the stacked body and the second insulation layer. A first thickness of the third insulation layer between the electrode layers and the second insulation layer is thicker than a second thickness of the third insulation layer between the first insulation layers and the second insulation layer. Fourth insulation layers are provided between the electrode layers and the third insulation layer. A fifth insulation layer is provided between an electrode layer and the first insulation layers adjacent to the electrode layer and between the electrode layer and one of the fourth insulation layers.

公开(公告)号：US20240315036A1

公开(公告)日：2024-09-19

申请号：US18593502

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Shin ISHIMATSU ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Hiroyuki YAMASHITA ,  Wataru MATSUURA ,  Daisuke NISHIDA ,  Junichi KANEYAMA ,  Tomoyuki TAKEMOTO

IPC: H10B43/35 ,  G11C16/04 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  G11C16/0483 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: According to one embodiment, a semiconductor memory device includes a stacked film in which a plurality of silicon oxide layers, one of which having a film density of 2.3 g/cm3 or more, and a plurality of conductive layers, are alternately stacked in a first direction, and a memory pillar that penetrates the stacked film in the first direction, wherein a plurality of memory cells is provided in the memory pillar.

公开(公告)号：US20230309310A1

公开(公告)日：2023-09-28

申请号：US17930889

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Yuta SAITO ,  Shinji MORI ,  Hiroyuki YAMASHITA ,  Satoshi NAGASHIMA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Shota KASHIYAMA ,  Keiichi SAWA ,  Junichi KANEYAMA

IPC: H01L27/1158 ,  G11C5/06 ,  H01L27/1157

CPC classification number: H01L27/1157 ,  G11C5/063 ,  H01L27/1158

Abstract: A semiconductor device of embodiments includes: a semiconductor layer containing silicon (Si); a first insulating layer provided in a first direction of the semiconductor layer; a second insulating layer surrounded by the semiconductor layer in a first cross section perpendicular to the first direction and containing silicon (Si) and oxygen (O); a third insulating layer surrounded by the second insulating layer in the first cross section and containing a metal element and oxygen (O); and a conductive layer surrounded by the first insulating layer in a second cross section perpendicular to the first direction, provided in the first direction of the third insulating layer, and spaced from the semiconductor layer.

公开(公告)号：US20240324227A1

公开(公告)日：2024-09-26

申请号：US18593379

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Hiroyuki YAMASHITA ,  Tatsunori ISOGAI ,  Masaki NOGUCHI ,  Junichi KANEYAMA ,  Shin ISHIMATSU ,  Daisuke NISHIDA ,  Tomoyuki TAKEMOTO ,  Wataru MATSUURA

IPC: H10B43/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/27

Abstract: A semiconductor device includes a stack including a conductor layer and an insulator layer, a block insulating layer, a channel layer, a charge storage layer provided between the block insulating layer and the channel layer, and a tunnel layer provided between the charge storage layer and the channel layer, where the charge storage layer includes a first charge storage layer containing Si, N and at least one of Al, Mo, Nb, Hf, Zr, Ti, B, or P, a second charge storage layer containing Si and N, in which Si is contained at a second concentration higher than a first concentration that is a concentration of Si in the first charge storage layer, and provided between the first charge storage layer and the tunnel layer, and a dielectric layer containing at least one of silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN), or aluminum oxide (AlOx), and provided between the first charge storage layer and the second charge storage layer.

公开(公告)号：US20230164998A1

公开(公告)日：2023-05-25

申请号：US17887766

申请日：2022-08-15

Applicant: Kioxia Corporation

Inventor： Junichi KANEYAMA ,  Keiichi SAWA ,  Hiroyuki YAMASHITA

IPC: H01L27/11582 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L29/513 ,  H01L29/40117

Abstract: A semiconductor device includes a plurality of electrode layers separated from each other in a first direction, a charge storage layer provided on side surfaces of the plurality of electrode layers via a first insulating film, and a semiconductor layer provided on a side surface of the charge storage layer via a second insulating film. The charge storage layer includes a location having a fluorine concentration of 5.0 x 1018 atoms/cm3. or less. A fluorine concentration at an interface between the charge storage layer and the second insulating film is 10 times or more or 1 / 10 or less of a fluorine concentration at an interface between the charge storage layer and the first insulating film.

公开(公告)号：US20220310640A1

公开(公告)日：2022-09-29

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki FUKUDA ,  Ryota NARASAKI ,  Takashi KURUSU ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Shinji MORI ,  Shoji HONDA ,  Takafumi OCHIAI ,  Hiroyuki YAMASHITA ,  Junichi KANEYAMA ,  Ha HOANG ,  Yuta SAITO ,  Kota TAKAHASHI ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20220302160A1

公开(公告)日：2022-09-22

申请号：US17410711

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki YAMASHITA ,  Keiichi SAWA ,  Yasushi NAKASAKI ,  Takamitsu ISHIHARA ,  Junichi KANEYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.