Abstract:
Methods and systems for generating a high resolution image for a specimen from a low resolution image of the specimen are provided. One system includes one or more computer subsystems configured for acquiring a low resolution image of a specimen. The system also includes one or more components executed by the one or more computer subsystems. The one or more components include a deep convolutional neural network that includes one or more first layers configured for generating a representation of the low resolution image. The deep convolutional neural network also includes one or more second layers configured for generating a high resolution image of the specimen from the representation of the low resolution image. The second layer(s) include a final layer configured to output the high resolution image and configured as a sub-pixel convolutional layer.
Abstract:
Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
Abstract:
Methods and systems for generating a high resolution image for a specimen from a low resolution image of the specimen are provided. One system includes one or more computer subsystems configured for acquiring a low resolution image of a specimen. The system also includes one or more components executed by the one or more computer subsystems. The one or more components include a deep convolutional neural network that includes one or more first layers configured for generating a representation of the low resolution image. The deep convolutional neural network also includes one or more second layers configured for generating a high resolution image of the specimen from the representation of the low resolution image. The second layer(s) include a final layer configured to output the high resolution image and configured as a sub-pixel convolutional layer.
Abstract:
Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
Abstract:
A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.
Abstract:
A multi-beam inspection system includes one or more particle beam sources to generate two or more particle beams, a set of particle control elements configured to independently direct the two or more particle beams to a sample, one or more detectors positioned to receive particles emanating from the sample in response to the two or more particle beams, and a controller communicatively coupled to the one or more detectors. The controller includes one or more processors to generate two or more inspection datasets associated with the particles received by the one or more detectors.
Abstract:
Methods and systems enabling ultra-high resolution topography measurements of patterned wafers are disclosed. Measurements obtained utilizing the ultra-high resolution metrology may be utilized to improve wafer metrology measurement accuracies. Additionally, measurements obtained utilizing the ultra-high resolution metrology may also be utilized to provide feedback and/or calibration control to improve fabrication and design of wafers.
Abstract:
Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
Abstract:
Systems and methods for providing improved scanner corrections are disclosed. Scanner corrections provided in accordance with the present disclosure may be referred to as wafer geometry aware scanner corrections. More specifically, wafer geometry and/or wafer shape signature information are utilized to improve scanner corrections. By removing the wafer geometry as one of the error sources that may affect the overlay accuracy, better scanner corrections can be obtained because one less contributing factor needs to be modeled.
Abstract:
A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.