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    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output
    2.
    发明授权
    Integrated semiconductor light emitting element with oscillation wavelength and phase modulated light output 失效
    具有振荡波长和相位调制光输出的集成半导体发光元件

    公开(公告)号：US4720835A

    公开(公告)日：1988-01-19

    申请号：US767152

    申请日：1985-08-19

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Yukio Noda ,  Yukitoshi Kushiro

    IPC分类号： G02F1/025 ,  H01S5/00 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/16 ,  H01S3/19

    CPC分类号： H01S5/164 ,  H01S5/06258 ,  H01S5/12 ,  H01S5/06236 ,  H01S5/06246 ,  H01S5/124

    摘要： A semiconductor light emitting element is disclosed, which is provided with a light emitting region having a diffraction grating formed by periodic corrugations, a modulation region having an external waveguide layer optically connected directly to the light emitting region and a pn junction separated from a pn junction of the light emitting region and a window region formed of a semiconductor having a larger energy gap than that of a light emitting layer of the light emitting region and extending from at least one end of the light emitting region and the external waveguide layer. The refractive index of the external waveguide is varied through utilization of the electrooptic effect so that the frequency or phase of light stably oscillating at a single wavelength is precisely controlled or modulated. In particular, when the window region is formed only outside the light emitting region, frequency modulation is carried out, and when the window region is formed at least outside the modulation region, phase modulation takes place.

    摘要翻译： 公开了一种半导体发光元件，其设置有具有由周期性波纹形成的衍射光栅的发光区域，具有与发光区域直接光学连接的外部波导层的调制区域和与pn结分离的pn结 的发光区域和由与发光区域的发光层相比能量间隙大的半导体形成的窗口区域，并且从发光区域和外部波导层的至少一端延伸。 通过利用电光效应来改变外部波导的折射率，从而精确地控制或调制在单个波长处稳定振荡的光的频率或相位。 特别地，当窗口区仅形成在发光区域的外部时，进行频率调制，并且当至少在调制区域外部形成窗口区域时，进行相位调制。

    Semiconductor external optical modulator
    4.
    发明授权
    Semiconductor external optical modulator 失效
    半导体外部光调制器

    公开(公告)号：US4837526A

    公开(公告)日：1989-06-06

    申请号：US42433

    申请日：1987-04-24

    申请人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： G02F1/015 ,  G02F1/025

    CPC分类号： G02F1/025 ,  G02F2001/0154 ,  G02F2001/0157 ,  G02F2203/25 ,  G02F2203/255

    摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.

    摘要翻译： 公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是 确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是 降至基本为零。

    Method for manufacturing semiconductor optical integrated device with optical waveguide regions
    5.
    发明授权
    Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效
    具有光波导区域的半导体光集成器件的制造方法

    公开(公告)号：US4820655A

    公开(公告)日：1989-04-11

    申请号：US15953

    申请日：1987-02-18

    申请人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： H01L27/15 ,  G02B6/122 ,  G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205

    CPC分类号： H01S5/0265 ,  H01S5/1021 ,  H01S5/12

    摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.

    摘要翻译： 一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。 根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去 最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。

    Semiconductor laser
    8.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4456998A

    公开(公告)日：1984-06-26

    申请号：US266610

    申请日：1981-05-22

    申请人： Fujio Tanaka ,  Yasuyuki Okamura ,  Yukitoshi Kushiro ,  Chuichi Ota ,  Shigeyuki Akiba

    发明人： Fujio Tanaka ,  Yasuyuki Okamura ,  Yukitoshi Kushiro ,  Chuichi Ota ,  Shigeyuki Akiba

    IPC分类号： H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2231

    摘要： A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.

    摘要翻译： 一种半导体激光器，其包括InP的衬底，有源层和保持在其间的有源层的两个覆盖层，并且被构造成使得有源层的折射率可以大于两个覆盖层的折射率 。 在两个包覆层中的一个中，与有源层中的辐射区相邻的区域的折射率大于与有源层中的非辐射区域相邻的区域的折射率。 另一个包覆层的折射率等于与辐射区域或非辐射区域相邻的所述上包层的区域的折射率。 选择有源层的辐射区域的厚度和宽度，使得半导体激光器可以在基本横向模式下振荡。 可以在活性层和两个包覆层中的一个之间进一步设置缓冲层。