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公开(公告)号：US06967119B2
公开(公告)日：2005-11-22
申请号：US10699553
申请日：2003-10-31
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3054 , H01S5/3432 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.
摘要翻译： 提供了一种在单个基板上具有分别振荡不同波长的激光的多个激光部分的多个激光部分分别包含不同类型的掺杂剂的半导体激光器件。 还提供一种制造半导体激光器件的方法，在单个基板上形成多个激光器部分，每个激光器各自振荡不同波长的激光，最初在晶体生长方法中形成激光部分，随后在其中形成另一激光器部分 不同的晶体生长方法。
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公开(公告)号：US20050271108A1
公开(公告)日：2005-12-08
申请号：US11138382
申请日：2005-05-27
CPC分类号： B82Y20/00 , G11B7/1275 , H01S5/2206 , H01S5/2231 , H01S5/3432 , H01S5/34326 , H01S5/4031 , H01S5/4087 , H01S2301/173 , H01S2304/04
摘要： A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlxGa1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlGaInP second upper cladding layer is identical to a ratio of an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlxGa1-xAs (X=0.550) second cladding layer to an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlGaInP second upper cladding layer.
摘要翻译： 一种半导体激光器的制造方法，其中通过将p型GaAs覆盖层的层厚度相加而得到的层厚度与p型Al <！ - SIPO
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公开(公告)号：US07180925B2
公开(公告)日：2007-02-20
申请号：US10715025
申请日：2003-11-18
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/0655 , H01S5/222 , H01S5/4031 , H01S5/4087 , H01S2302/00
摘要： A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 μm (about 0.5 μm) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.
摘要翻译： 由具有与p型第二包覆层的折射率不同的折射率的半导体构成的光限制层在两个脊部的整个表面上形成为不大于2μm（约0.5μm）的小的膜厚度 半导体激光器 因此，脊部上的光限制层大致平坦，以便通过蚀刻易于移除。 结果，防止由于深蚀刻而引起的脊部的p型第二包覆层的曝光，从而能够稳定地对p型包层的光进行限制。 在光限制层上形成电介质膜，并且增强了通过光限制层的厚度减小而损失的电流收缩功能。
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公开(公告)号：US20050018733A1
公开(公告)日：2005-01-27
申请号：US10891507
申请日：2004-07-15
IPC分类号： H01L21/306 , H01S3/14 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/2231 , H01S5/3432 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： An n-type AlGaAs cladding layer of a first semiconductor laser 39 to be first formed on an n-type GaAs buffer layer 22 is constructed of a two-layer structure of a second n-type AlxGa1-xAs (x=0.500) cladding layer 23 and a first n-type AlxGa1-xAs (x=0.425) cladding layer 24. With this arrangement, in removing by etching the second n-type cladding layer 23 located on the n-type GaAs buffer layer 22 side with HF, no cloudiness occurs since the Al crystal mixture ratio x of the second n-type cladding layer 23 is 0.500, allowing mirror surface etching to be achieved. Moreover, by virtue of selectivity to GaAs, the etching automatically stops in the n-type GaAs buffer layer 22. Even in the above case, ellipticity can be improved by matching the vertical radiation angle θ⊥ to 36 degrees since the Al crystal mixture ratio x of the first n-type cladding layer 24 located on the AlGaAs multi-quantum well active layer 25 side is 0.425.
摘要翻译： 首先形成在n型GaAs缓冲层22上的第一半导体激光器39的n型AlGaAs覆层由第二n型Al x Ga 1-x As（x = 0.500）包层的两层结构构成 23和第一n型Al x Ga 1-x As（x = 0.425）包覆层24.通过这种布置，通过用HF除去位于n型GaAs缓冲层22侧的第二n型包覆层23， 由于第二n型包覆层23的Al晶体混合比x为0.500，因此发生混浊，从而能够实现镜面蚀刻。 此外，由于对GaAs的选择性，在n型GaAs缓冲层22中蚀刻自动停止。即使在上述情况下，通过将垂直辐射角θ⊥与36度匹配可以提高椭圆率，因为Al晶体混合比 位于AlGaAs多量子阱有源层25一侧的第一n型覆层24的x为0.425。
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公开(公告)号：US20100206118A1
公开(公告)日：2010-08-19
申请号：US12700425
申请日：2010-02-04
CPC分类号： F16H61/18 , F16H63/3466 , F16H63/483 , F16H2059/746 , F16H2061/326 , Y10T74/19251 , Y10T74/20018 , Y10T74/20067
摘要： In vehicular control method and apparatus for a shift-by-wire device, a selected shift position is modified to at least one of a vehicular parking position, a neutral position, and a traveling position, the selected shift position is modified to the vehicular parking position when a power switch is switched to an OFF position, and the modification of the shift position to the vehicular parking position is inhibited when an operation pattern of an operation input section while the power switch is in the ON position is made coincident with the operation pattern prescribed as a cipher code which inhibits the shift position modification to the vehicular parking position, the operation patterns being constituted by a combination of operation patterns which would not be carried out in the operation section during an ordinary traveling.
摘要翻译： 在用于线控换档装置的车辆控制方法和装置中，所选择的换档位置被修改为车辆停放位置，中立位置和行驶位置中的至少一个，所选择的换档位置被修改为车辆停车 当电源开关切换到OFF位置时的位置，并且当电源开关处于ON位置时操作输入部分的操作模式与操作一致时，禁止对车辆停车位置的换档位置的修改 作为禁止对车辆停车位置的换档位置修改的密码的图案，操作模式由在普通行驶期间不在操作部中执行的操作模式的组合构成。
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公开(公告)号：US20100059271A1
公开(公告)日：2010-03-11
申请号：US12375514
申请日：2007-07-27
申请人： Atsurou Yoneda , Tetsurou Abumita , Yoshiaki Ueda , Eiki Tsushima
发明人： Atsurou Yoneda , Tetsurou Abumita , Yoshiaki Ueda , Eiki Tsushima
IPC分类号： H05K7/20
CPC分类号： H01L23/66 , H01L23/3735 , H01L23/3736 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01046 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/15153 , H01L2924/1517 , H01L2924/16195 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An electronic component storing package which generates a large quantity of heat during operation and an electronic apparatus storing such an electronic component are provided. In the electronic component storing package and the electronic apparatus, a heat dissipating member (1) is used which comprising at least five layers including first metal layers (11) having good thermal conductivity and second metal layers (12) having a smaller coefficient of thermal expansion and less thickness compared with the first metal layers (11), the first metal layers (11) and second metal layers (12) being alternately stacked, the first metal layers uppermost and lowermost layers of the layers, a thickness of at least one internally-arranged first metal layer (11a) being thicker than that of the lowermost and uppermost layers. Accordingly, heat generated from the electronic component (5) can be dissipated well to the outside, and a coefficient of thermal expansion of a mounting portion (1a) can be brought close to that of the electronic component (5) or the like.
摘要翻译： 提供了一种在操作期间产生大量热量的电子部件存储包装和存储这种电子部件的电子设备。 在电子元器件储存封装和电子设备中，使用散热元件（1），其包括至少五层，包括具有良好导热性的第一金属层（11）和具有较小热导率的第二金属层（12） 与第一金属层（11）相比，第一金属层（11）和第二金属层（12）交替堆叠，第一金属层的最上层和最下层的厚度至少为一个 内部布置的第一金属层（11a）比最下层和最上层的厚度厚。 因此，可以将从电子部件（5）产生的热量良好地散发到外部，并且能够使安装部（1a）的热膨胀系数接近于电子部件（5）的热膨胀系数等。
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公开(公告)号：USD468070S1
公开(公告)日：2002-12-31
申请号：US29152670
申请日：2001-12-20
申请人： Kazuhiro Fujita , Yoshiaki Ueda
设计人： Kazuhiro Fujita , Yoshiaki Ueda
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8.发明授权Driving method and driving apparatus of a solenoid and solenoid driving control apparatus 失效螺线管和螺线管驱动控制装置的驱动方法和驱动装置公开(公告)号：US06208498B1
公开(公告)日：2001-03-27
申请号：US09203756
申请日：1998-12-02
申请人： Yoshiaki Ueda
发明人： Yoshiaki Ueda
IPC分类号： H01H4704
CPC分类号： F16H61/0251 , H01H47/325
摘要： A solenoid supply current value is predicted from a detected battery voltage, an operational fluid temperature, and the like, and a chopper ON time during chopping drive is reduced, and relatively, a chopper OFF time is increased by using, for example, a voltage correction coefficient which becomes smaller as the battery voltage becomes larger, or a temperature correction coefficient which is set smaller as the operational fluid temperature is smaller. Alternatively, an overexciting current of the solenoid is detected at least at two time points during overexcitation, and a termination time point of the overexcitation at which the overexciting current reaches a target overexciting current is predicted from the overexciting current value, and the overexcitation is terminated when the termination time point is reached.
摘要翻译： 从检测到的电池电压，工作液温度等预测电磁线圈供给电流值，减少斩波驱动时的斩波导通时间，相对地，通过使用例如电压 校正系数随着电池电压变大而变小，或随着工作流体温度变小而设定得较小的温度校正系数。 或者，至少在过激励期间的两个时间点检测螺线管的过励磁电流，并且根据过励磁电流值预测过励磁电流达到目标过励磁电流的过励磁终止时间点，并且过励磁终止 当达到终止时间点。
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公开(公告)号：US5848366A
公开(公告)日：1998-12-08
申请号：US653888
申请日：1996-05-28
申请人： Yoshiaki Ueda
发明人： Yoshiaki Ueda
CPC分类号： B60K11/04
摘要： A load driving control system for an automotive vehicle having a load such as an electric motor for a radiator fan. The load driving control system comprises a microcomputer storing a load driving necessariness decision program by which a decision is made as to whether driving of the load is necessary or not in accordance with the detected vehicle operating condition so as to output one of load driving necessariness and unnecessariness commands. A load driving circuit is provided to provide a driving current in response to the load driving necessariness command, thereby driving the load. Additionally, a load compulsorily driving requirement circuit is provided to compulsorily drive the load when the microcomputer stops outputting each command even though an ignition key switch is turned ON.
摘要翻译： 一种用于具有诸如用于散热器风扇的电动机的负载的机动车辆的负载驱动控制系统。 负载驱动控制系统包括存储负载驱动必要性判定程序的微型计算机，根据检测到的车辆运转状况，判定是否需要负载驱动，以输出负载驱动必要性之一， 不必要的命令。 提供负载驱动电路以响应于负载驱动必要性命令提供驱动电流，从而驱动负载。 此外，即使点火钥匙开关接通，也提供负载强制驱动要求电路，以强制驱动负载。
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10.发明授权
公开(公告)号：US5376058A
公开(公告)日：1994-12-27
申请号：US979329
申请日：1992-11-20
申请人： Yoshiaki Ueda
发明人： Yoshiaki Ueda
IPC分类号： F16H59/20 , F16H59/22 , F16H59/24 , F16H59/42 , F16H59/44 , F16H59/50 , F16H59/68 , F16H61/00 , F16H61/04 , F16H61/10
CPC分类号： F16H61/0021 , B60W2510/0638 , F16H2061/0087 , F16H2342/044 , F16H59/20 , F16H59/22 , F16H59/24 , F16H59/42 , F16H59/44 , F16H59/68 , Y10T477/693962 , Y10T477/693973
摘要： A fluid pressure control arrangement for an automatic transmission comprises a control unit for calculating a shifting frequency and a determining a frictional coefficient of frictionally engageable elements of the transmission. Fluid pressure correction is calculated based on the shifting frequency and a throttle valve opening angle detected by a sensor. A signal indicative of the fluid pressure correction value is output to actuate a solenoid for effecting adjustment of fluid pressure in the automatic transmission for adjusting the line pressure in accordance with the determined frictional coefficient of the frictionally engageable elements to maintain sufficient engagement capacity of the frictionally engageable elements.
摘要翻译： 用于自动变速器的流体压力控制装置包括用于计算变速频率的控制单元和确定变速器的可摩擦接合元件的摩擦系数。 基于传感器检测到的换档频率和节流阀打开角度计算流体压力校正。 输出指示流体压力校正值的信号以致动螺线管，以实现自动变速器中的流体压力的调节，以根据所确定的可摩擦接合元件的摩擦系数来调节管路压力，以保持摩擦的足够的接合能力 可互动的元素
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