摘要:
The invention relates to a surfactant composition containing an alkyl ether sulfate represented by the following formula (1): RO—(PO)m(EO)nSO3M (1) wherein R represents a linear alkyl group having 8 to 24 carbon atoms, PO and EO represent a propyleneoxy group and an ethyleneoxy group, respectively, m and n denote the average numbers of added moles of PO and EO, respectively, and are numbers meeting: 0
摘要:
The invention relates to a surfactant composition containing an alkyl ether sulfate represented by the following formula (1): RO—(PO)m(EO)nSO3M (1) wherein R represents a linear alkyl group having 8 to 24 carbon atoms, PO and EO represent a propyleneoxy group and an ethyleneoxy group, respectively, m and n denote the average numbers of added moles of PO and EO, respectively, and are numbers meeting: 0
摘要:
Disclosed is a surfactant composition containing an alkyl sulfate ester salt derivative represented by the following general formula (1). R—O—(PO)n—SO3m (1) (In the formula, R represents a linear alkyl group having 8-24 carbon atoms; PO represents a propyleneoxy group; n represents an average mole number of added PO that is a number satisfying 0
摘要:
A method for diagnosing arrhythmia such as atrial fibrillation is provided. A single nucleotide polymorphism present in the region 24 of the long arm of the chromosome 1, NEURL gene, or CUX2 gene is analyzed, and the risk of developing arrhythmia and/or the presence or absence of the onset of arrhythmia is diagnosed on the basis of the analysis result.
摘要:
A semiconductor integrated circuit has a central processing unit and a rewritable nonvolatile memory area disposed in an address space of the central processing unit. The nonvolatile memory area has a first nonvolatile memory area and a second nonvolatile memory area, which memorize information depending on the difference of threshold voltages. The first nonvolatile memory area has a maximum variation width of a threshold voltage for memorizing an information set larger than that of the second nonvolatile memory area. The first nonvolatile memory area can be prioritized to expedite a read speed of the memory information, and the second nonvolatile memory area can be prioritized to guarantee the number of times of rewrite operation of memory information.
摘要:
A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section.
摘要:
A formatting device (200) which formats a memory module in such a manner that delay in updating management information is prevented is a formatting device that formats a memory card (100) including a first recording area (110) and a second recording area (120) having different characteristics, the formatting device including: a use determination unit (210) configured to hold a ratio of recording areas to be allocated to each of directories that are to be created when the memory card (100) is formatted; and a management information generation unit (220) configured to allocate, to each directory, a recording area having a size determined for the directory according to the ratio held by the use determination unit (210), the recording area being included in the first recording area (110) of the memory card (100).
摘要:
[Problem] To provide a polyurethane elastic yarn which has the high strength and ductility sought in polyurethane elastic yarn, and also has excellent durability and heat resistance, as well as little fatigue at low temperature; and a production method thereof.[Means of Resolution] A polyurethane elastic yarn made from polyurethane which has polymer diol and diisocyanate as starting substances, wherein said polyurethane comprises a polyurethane A containing a polybutadiene structure in which the proportion of 1,2-bonded butadiene structure to 1,4-bonded butadiene structure in the molecule is in the range from 91:9 to 20:80.
摘要:
Disclosed is a polyurethane elastic yarn which is excellent in elongation, resilience, heat resistance, alkali resistance, chemical resistance, and capability of being dyed with a cationic dye and which is suitable for use in a stretch cloth, a wearing apparel or the like. The polyurethane elastic yarn comprises: an elastic yarn comprising a polyurethane mainly composed of a polymer diol and a diisocyanate; and a polymer of a compound having a sulfonate group contained in the elastic yarn.
摘要:
A coding device includes a coding unit (740) for encoding an input digital signal using code words contained in one of a plurality of variable length code word groups, and a multiplexer (701) for generating a stream by generating a parameter (such as idr_pic_id) describing specific information about the stream, encoding the parameters, and adding it to the output data from the coding unit. The length of the code words contained in any single variable length code word group is the same. The multiplexer selects one variable length code word group containing three or more code words out of the plural groups, and codes the parameter using one code word selected from the code words contained in the selected group.