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    Piezoelectric thin film element, and piezoelectric thin film device
    6.
    发明授权
    Piezoelectric thin film element, and piezoelectric thin film device 有权
    压电薄膜元件和压电薄膜器件

    公开(公告)号：US08860286B2

    公开(公告)日：2014-10-14

    申请号：US13577405

    申请日：2011-02-15

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    IPC分类号： H01L41/187 ,  H01L41/08 ,  H01L41/316

    CPC分类号： H01L41/0805 ,  H01L41/1873 ,  H01L41/316

    摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

    摘要翻译： 公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。 压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体， 气体元素的比例为80ppm以下。

    MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE
    9.
    发明申请
    MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE 审中-公开
    压电薄膜元件和压电元件的制造方法

    公开(公告)号：US20120304429A1

    公开(公告)日：2012-12-06

    申请号：US13488230

    申请日：2012-06-04

    申请人： Fumimasa HORIKIRI ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

    发明人： Fumimasa HORIKIRI ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

    IPC分类号： H01L41/22

    CPC分类号： H01L41/0815 ,  H01L41/1873 ,  H01L41/316 ,  H01L41/332 ,  Y10T29/42

    摘要： A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.

    摘要翻译： 压电薄膜元件的制造方法包括在基板上形成下电极，在下电极上形成包含具有钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，在压电膜上形成掩模图案， 通过掩模图案蚀刻压电膜，在干蚀刻之后去除掩模图案，并在氧化气氛中对压电膜进行热处理。 压电器件的制造方法包括：在压电膜元件的制造方法形成的压电膜元件的压电膜上形成上电极，将电压施加单元或电压检测单元连接到下电极， 上电极。

    Piezoelectric film element using (Na,K,Li)NbO3
    10.
    发明授权
    Piezoelectric film element using (Na,K,Li)NbO3 有权
    使用（Na，K，Li）NbO 3的压电薄膜元件

    公开(公告)号：US08581477B2

    公开(公告)日：2013-11-12

    申请号：US13018693

    申请日：2011-02-01

    申请人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    发明人： Kazufumi Suenaga ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto

    IPC分类号： H01L41/047 ,  H01L41/187

    CPC分类号： H01L41/187 ,  H01L41/0477 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/316

    摘要： A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a′ is set in a range of 0.992 or more and 0.999 or less, which is the ratio of a crystal lattice spacing c in a direction of a normal line to the substrate surface, with respect to a crystal lattice spacing a′ whose inclination angle from the substrate surface is in a range of 10° or more and 30° or less.

    摘要翻译： 提供一种能够改善压电性能的压电膜元件，其在基板上至少具有下电极，无铅压电膜和上电极，其中至少下电极中的下电极和 上电极具有立方晶系，四方晶系，正交晶系，六方晶系，单斜晶系，三斜晶系，三
    晶体系的晶体结构，或其组成为： 这些晶体存在或其中的两种以上共存，并且晶体结构的晶轴优先取向小于或等于这些晶体的两个轴的特定轴，并且将比率c / a'设定在0.992的范围内 以上且0.999以下，即与法线的方向相对于基板表面的晶格间距c的比例，相对于晶格间距a'，其倾斜角为 基板表面的厚度在10°以上且30°以下的范围内。