SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20080258266A1

    公开(公告)日:2008-10-23

    申请号:US12029969

    申请日:2008-02-12

    IPC分类号: H01L23/00 H01L21/71

    摘要: A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.

    摘要翻译: 半导体器件包括:形成在衬底上的层间绝缘膜; 在衬底的芯片区域中的层间绝缘膜中形成的布线; 密封环,形成在所述芯片区域的周围的所述层间绝缘膜中,并且连续地围绕所述芯片区域; 以及形成在其上形成有布线和密封环的层间绝缘膜上的第一保护膜。 当从芯片区域观察时,在位于密封环外侧的区域中的第一保护膜中形成第一开口,并且层间绝缘膜在第一开口中露出。

    SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS USING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS USING THE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
    半导体器件,使用半导体器件的电子设备,以及制造半导体器件的方法

    公开(公告)号:US20110147904A1

    公开(公告)日:2011-06-23

    申请号:US13037615

    申请日:2011-03-01

    申请人: Hikari SANO

    发明人: Hikari SANO

    IPC分类号: H01L23/58 H01L21/50

    摘要: This invention provides a semiconductor device with increased moisture resistance. The semiconductor device includes: a semiconductor substrate; an optical element provided in a front surface of the semiconductor substrate; a light-transmissive substrate provided above the front surface of the semiconductor substrate; an adhesive layer provided between the front surface of the semiconductor substrate and a front surface of the light-transmissive substrate, and fixing the light-transmissive substrate to the semiconductor substrate; and an insulating film covering a lateral surface of said adhesive layer which is not in contact with the light-transmissive substrate and the semiconductor substrate.

    摘要翻译: 本发明提供了具有增加的耐湿性的半导体器件。 半导体器件包括:半导体衬底; 设置在所述半导体衬底的前表面中的光学元件; 设置在所述半导体衬底的前表面上方的透光衬底; 设置在所述半导体衬底的前表面和所述透光衬底的前表面之间的粘合层,并将所述透光衬底固定到所述半导体衬底; 以及覆盖所述粘合剂层的不与所述透光性基板和所述半导体基板接触的侧面的绝缘膜。

    OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    4.
    发明申请
    OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
    光学装置,其制造方法和电子装置

    公开(公告)号:US20110169118A1

    公开(公告)日:2011-07-14

    申请号:US13004354

    申请日:2011-01-11

    申请人: Hikari SANO

    发明人: Hikari SANO

    IPC分类号: H01L31/0232 H01L31/18

    摘要: The present invention is has an object of providing an optical device miniaturized while maintaining bonding strength between a semiconductor substrate and a light-transmissive plate, reducing possibility of warpage, and maintaining yields and design flexibility, a method of manufacturing the optical device, and an electronic apparatus. The optical device according to the present invention includes a semiconductor substrate having one surface in which a light-receiving element is formed; and a light-transmissive plate provided above the semiconductor substrate so as to cover the light-receiving element. The semiconductor substrate and the light-transmissive plate are partially bonded above a light-receiving unit of the semiconductor substrate. The light-receiving element is formed in the light-receiving unit.

    摘要翻译: 本发明的目的是提供一种小型化的光学装置,同时保持半导体基板和透光板之间的结合强度,降低翘曲的可能性,并且保持屈服和设计灵活性,制造光学装置的方法和 电子仪器 根据本发明的光学装置包括其中形成有光接收元件的一个表面的半导体衬底; 以及设置在半导体衬底上方以覆盖光接收元件的透光板。 半导体衬底和透光板部分地接合在半导体衬底的光接收单元的上方。 光接收元件形成在光接收单元中。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20110147871A1

    公开(公告)日:2011-06-23

    申请号:US13036232

    申请日:2011-02-28

    IPC分类号: H01L31/0232 H01L31/18

    摘要: To provide a semiconductor device and a method of manufacturing the same, which have a device structure ensuring high degrees of reliability and mass-productivity at low cost.A semiconductor device includes: a substrate including an imaging area and having a first main surface and a second main surface; an electrode formed on the first main surface; an external electrode formed on the second main surface; a conductive portion which is formed in a through hole penetrating the substrate, and electrically connects the electrode and the external electrode; an optical element which is placed on the first main surface and has a convex surface including a convex portion; and a light transmitting element which is bonded to the optical element so as to cover the convex portion and has a flat upper surface.

    摘要翻译: 提供一种以低成本确保高可靠性和大规模生产率的器件结构的半导体器件及其制造方法。 半导体器件包括:基板,包括成像区域并具有第一主表面和第二主表面; 形成在所述第一主表面上的电极; 形成在所述第二主表面上的外部电极; 导电部,形成在穿过所述基板的通孔中,并且电连接所述电极和所述外部电极; 光学元件,其放置在所述第一主表面上并且具有包括凸部的凸面; 以及透光元件,其结合到所述光学元件以覆盖所述凸部并且具有平坦的上表面。