摘要:
A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.
摘要:
A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.
摘要:
A semiconductor chip, including: a substrate including an front surface; an integrated circuit formed on the front surface and including a plurality of semiconductor elements; and a heat-radiating plug formed in a region of the substrate corresponding to at least one of the semiconductor elements. The heat-radiating plug is made of a material having a thermal conductivity greater than that of the substrate formed in a non-penetrating hole having its opening on a reverse surface of the substrate.
摘要:
A semiconductor device includes: a semiconductor substrate; a first interlayer insulating film formed over the semiconductor substrate; a pad formed above the first interlayer insulating film; and a plurality of first interconnects spaced apart from each other in a portion of the first interlayer insulating film located below the pad. Below the pad, the first interconnects are formed in quadrangular plan shapes.
摘要:
A semiconductor device includes: a semiconductor substrate; a through electrode passing through the semiconductor substrate in a thickness direction of the semiconductor substrate; an internal electrode provided in a part of the top surface of the semiconductor substrate and electrically connected to the through electrode which reaches the part; a first protective film covering the top surface except a part of the internal electrode; a second protective film formed apart from the first protective film, on the part of the internal electrode, the part being not covered by the first protective film; and metal wiring formed on the back surface of the semiconductor substrate and electrically connected to the through electrode, the second main surface being on a side of the semiconductor substrate opposite the first main surface.
摘要:
A semiconductor device includes: a circuit region having a function element formed on a semiconductor substrate; a scribe region located between the circuit region and another circuit region formed spaced from the circuit region, the scribe region including a cutting region and non-cutting regions provided at both sides of the cutting region; a first interlayer insulating film formed in the scribe region on the semiconductor substrate; a first dummy pattern made of conductive material and formed in the first interlayer insulating film in the cutting region; and a second dummy pattern made of conductive material and formed in the first interlayer insulating film in each of the non-cutting regions. The ratio, per unit area, of the area of the first dummy pattern to the area of the cutting region is lower than the ratio, per unit area, of the area of the second dummy pattern to the area of the non-cutting regions.
摘要:
An optical device includes: an optical element including an imaging region, a peripheral circuit region formed at the rim of the imaging region and including a plurality of electrode portions, and a plurality of microlenses formed on the imaging region; a plurality of through-hole electrodes connected to the respective electrode portions and formed through the semiconductor substrate along the thickness of the semiconductor substrate; a plurality of metal interconnects connected to the respective through-hole electrodes and formed on a back surface of the semiconductor substrate opposite to a principal surface of the semiconductor substrate; an adhesive member formed on a surface of the optical element and made of a resin; and a transparent board bonded to the optical element with the adhesive member interposed therebetween. The transparent board has a planar shape larger than that of the optical element.
摘要:
A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.
摘要:
A semiconductor device includes: a semiconductor substrate; a first interlayer insulating film formed over the semiconductor substrate; a pad formed above the first interlayer insulating film; and a plurality of first interconnects spaced apart from each other in a portion of the first interlayer insulating film located below the pad. Below the pad, the first interconnects are formed in quadrangular plan shapes.
摘要:
The present invention is has an object of providing an optical device miniaturized while maintaining bonding strength between a semiconductor substrate and a light-transmissive plate, reducing possibility of warpage, and maintaining yields and design flexibility, a method of manufacturing the optical device, and an electronic apparatus. The optical device according to the present invention includes a semiconductor substrate having one surface in which a light-receiving element is formed; and a light-transmissive plate provided above the semiconductor substrate so as to cover the light-receiving element. The semiconductor substrate and the light-transmissive plate are partially bonded above a light-receiving unit of the semiconductor substrate. The light-receiving element is formed in the light-receiving unit.