Semiconductor device
    1.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08237281B2

    公开(公告)日:2012-08-07

    申请号:US12984142

    申请日:2011-01-04

    IPC分类号: H01L23/495

    摘要: A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.

    摘要翻译: 一种半导体器件包括在半导体衬底上的层间绝缘膜中堆叠的至少三个或更多个布线层,设置在半导体衬底的芯片区域的外周处的密封环和在芯片区域的一部分中提供的芯片强度增强 靠近密封圈。 芯片强度加强件由多个虚拟布线结构构成,并且多个虚设布线结构中的每一个形成为跨越两个或更多个布线层中的两个或更多个布线层,包括最下面的布线层和最上面的布线层 使用通孔部分。

    Semiconductor device having sealing ring
    2.
    发明授权
    Semiconductor device having sealing ring 有权
    具有密封环的半导体器件

    公开(公告)号:US08164163B2

    公开(公告)日:2012-04-24

    申请号:US12029969

    申请日:2008-02-12

    IPC分类号: H01L23/544

    摘要: A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.

    摘要翻译: 半导体器件包括:形成在衬底上的层间绝缘膜; 在衬底的芯片区域中的层间绝缘膜中形成的布线; 密封环,形成在所述芯片区域的周围的所述层间绝缘膜中,并且连续地围绕所述芯片区域; 以及形成在其上形成有布线和密封环的层间绝缘膜上的第一保护膜。 当从芯片区域观察时,在位于密封环外侧的区域中的第一保护膜中形成第一开口,并且层间绝缘膜在第一开口中露出。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07696607B2

    公开(公告)日:2010-04-13

    申请号:US11889210

    申请日:2007-08-09

    IPC分类号: H01L23/544

    摘要: A semiconductor device includes: a circuit region having a function element formed on a semiconductor substrate; a scribe region located between the circuit region and another circuit region formed spaced from the circuit region, the scribe region including a cutting region and non-cutting regions provided at both sides of the cutting region; a first interlayer insulating film formed in the scribe region on the semiconductor substrate; a first dummy pattern made of conductive material and formed in the first interlayer insulating film in the cutting region; and a second dummy pattern made of conductive material and formed in the first interlayer insulating film in each of the non-cutting regions. The ratio, per unit area, of the area of the first dummy pattern to the area of the cutting region is lower than the ratio, per unit area, of the area of the second dummy pattern to the area of the non-cutting regions.

    摘要翻译: 半导体器件包括:具有形成在半导体衬底上的功能元件的电路区域; 位于所述电路区域和与所述电路区域间隔开的另一电路区域之间的划线区域,所述划线区域包括切割区域和设置在所述切割区域两侧的非切割区域; 形成在半导体衬底上的划线区域中的第一层间绝缘膜; 由导电材料制成并形成在切割区域中的第一层间绝缘膜中的第一虚设图形; 以及由导电材料制成并形成在每个非切割区域中的第一层间绝缘膜中的第二虚设图案。 第一虚设图形的面积与切割区域的面积的单位面积的比率低于第二虚拟图案的面积与非切割区域的面积的每单位面积的比率。

    OPTICAL DEVICE AND METHOD FOR FABRICATING THE SAME
    7.
    发明申请
    OPTICAL DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
    光学装置及其制造方法

    公开(公告)号:US20090059055A1

    公开(公告)日:2009-03-05

    申请号:US12195081

    申请日:2008-08-20

    IPC分类号: H04N5/225

    摘要: An optical device includes: an optical element including an imaging region, a peripheral circuit region formed at the rim of the imaging region and including a plurality of electrode portions, and a plurality of microlenses formed on the imaging region; a plurality of through-hole electrodes connected to the respective electrode portions and formed through the semiconductor substrate along the thickness of the semiconductor substrate; a plurality of metal interconnects connected to the respective through-hole electrodes and formed on a back surface of the semiconductor substrate opposite to a principal surface of the semiconductor substrate; an adhesive member formed on a surface of the optical element and made of a resin; and a transparent board bonded to the optical element with the adhesive member interposed therebetween. The transparent board has a planar shape larger than that of the optical element.

    摘要翻译: 光学装置包括:光学元件,包括成像区域,形成在成像区域的边缘处并包括多个电极部分的外围电路区域和形成在成像区域上的多个微透镜; 多个通孔电极,其连接到各个电极部分并沿半导体衬底的厚度形成在半导体衬底上; 多个金属互连件,连接到相应的通孔电极并形成在与半导体衬底的主表面相对的半导体衬底的背面上; 形成在所述光学元件的表面上并由树脂制成的粘合部件; 以及粘合到光学元件上的透明板,其间插入有粘合构件。 透明板具有比光学元件大的平面形状。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20080258266A1

    公开(公告)日:2008-10-23

    申请号:US12029969

    申请日:2008-02-12

    IPC分类号: H01L23/00 H01L21/71

    摘要: A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.

    摘要翻译: 半导体器件包括:形成在衬底上的层间绝缘膜; 在衬底的芯片区域中的层间绝缘膜中形成的布线; 密封环,形成在所述芯片区域的周围的所述层间绝缘膜中,并且连续地围绕所述芯片区域; 以及形成在其上形成有布线和密封环的层间绝缘膜上的第一保护膜。 当从芯片区域观察时,在位于密封环外侧的区域中的第一保护膜中形成第一开口,并且层间绝缘膜在第一开口中露出。

    OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    10.
    发明申请
    OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
    光学装置,其制造方法和电子装置

    公开(公告)号:US20110169118A1

    公开(公告)日:2011-07-14

    申请号:US13004354

    申请日:2011-01-11

    申请人: Hikari SANO

    发明人: Hikari SANO

    IPC分类号: H01L31/0232 H01L31/18

    摘要: The present invention is has an object of providing an optical device miniaturized while maintaining bonding strength between a semiconductor substrate and a light-transmissive plate, reducing possibility of warpage, and maintaining yields and design flexibility, a method of manufacturing the optical device, and an electronic apparatus. The optical device according to the present invention includes a semiconductor substrate having one surface in which a light-receiving element is formed; and a light-transmissive plate provided above the semiconductor substrate so as to cover the light-receiving element. The semiconductor substrate and the light-transmissive plate are partially bonded above a light-receiving unit of the semiconductor substrate. The light-receiving element is formed in the light-receiving unit.

    摘要翻译: 本发明的目的是提供一种小型化的光学装置,同时保持半导体基板和透光板之间的结合强度,降低翘曲的可能性,并且保持屈服和设计灵活性,制造光学装置的方法和 电子仪器 根据本发明的光学装置包括其中形成有光接收元件的一个表面的半导体衬底; 以及设置在半导体衬底上方以覆盖光接收元件的透光板。 半导体衬底和透光板部分地接合在半导体衬底的光接收单元的上方。 光接收元件形成在光接收单元中。