公开(公告)号：US10083990B2

公开(公告)日：2018-09-25

申请号：US14838564

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Kwanghwan Ji ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1222 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/5209 ,  H01L51/5225

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

公开(公告)号：US11171246B2

公开(公告)日：2021-11-09

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US10943546B2

公开(公告)日：2021-03-09

申请号：US16694674

申请日：2019-11-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  PilSang Yun ,  Jeyong Jeon ,  Jiyong Noh ,  SeHee Park

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32

Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.

公开(公告)号：US11705460B2

公开(公告)日：2023-07-18

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11276710B2

公开(公告)日：2022-03-15

申请号：US16659528

申请日：2019-10-21

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11676970B2

公开(公告)日：2023-06-13

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan Ji ,  HongRak Choi ,  Jeyong Jeon ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

公开(公告)号：US11621356B2

公开(公告)日：2023-04-04

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US10181502B2

公开(公告)日：2019-01-15

申请号：US14838659

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Jungsun Beak ,  Seungmin Lee ,  Juheyuck Baeck ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208 ,  H01L51/52

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US09691833B2

公开(公告)日：2017-06-27

申请号：US14838631

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Seungmin Lee ,  Juheyuck Baeck ,  Hoiyong Kwon ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

公开(公告)号：US11984509B2

公开(公告)日：2024-05-14

申请号：US18117416

申请日：2023-03-04

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.