公开(公告)号：US20190148573A1

公开(公告)日：2019-05-16

申请号：US16250463

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0747

Abstract: A solar cell can include a silicon semiconductor substrate; an oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer; a diffusion region at a second surface of the silicon semiconductor substrate; a dielectric film on the polysilicon layer; a first electrode connected to the polysilicon layer through the dielectric film; a passivation film on the diffusion region; and a second electrode connected to the diffusion region through the passivation film.

公开(公告)号：US20180226520A1

公开(公告)日：2018-08-09

申请号：US15889950

申请日：2018-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Haejong CHO ,  Donghae OH ,  Juhwa CHEONG ,  Junyong AHN

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068 ,  C03C4/14 ,  C03C8/18 ,  C03C8/10

CPC classification number: H01L31/022425 ,  C03C4/14 ,  C03C8/10 ,  C03C8/18 ,  C03C2204/00 ,  C03C2205/00 ,  H01B1/16 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/50

Abstract: A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US20170309761A1

公开(公告)日：2017-10-26

申请号：US15643180

申请日：2017-07-06

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/077

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: A method for manufacturing a solar cell can include a tunnel layer forming step of forming a tunnel layer on a first surface of a semiconductor substrate, a first conductive type semiconductor region forming step of forming a first conductive type semiconductor region on the first surface of the semiconductor substrate, a second conductive type semiconductor region forming step of forming a second conductive type semiconductor region by doping impurities of a second conductive type into a second surface of the semiconductor substrate, a first passivation film forming step of forming a first passivation film on the first conductive type semiconductor region and an electrode forming step of forming a first electrode connected to the first conductive type semiconductor region and a second electrode connected to the second conductive type semiconductor region.

公开(公告)号：US20190326456A1

公开(公告)日：2019-10-24

申请号：US16457129

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US20190305171A1

公开(公告)日：2019-10-03

申请号：US16443564

申请日：2019-06-17

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Junyong AHN ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/20 ,  H01L31/105 ,  H01L31/024 ,  H01L31/0236

Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20150179837A1

公开(公告)日：2015-06-25

申请号：US14478841

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Sangwook PARK ,  Junyong AHN ,  Manhyo HA

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.

Abstract translation: 讨论太阳能电池。 太阳能电池包括位于半导体衬底的前表面的第一导电类型的半导体衬底，与第一导电类型相反的第二导电类型的发射极区域，位于第一导电类型的前表面上的前钝化部分 发射极区域，穿过前钝化部分并与发射极区域电连接的前电极部分，位于半导体衬底背面的背面钝化部分和穿过背部钝化部分的背面电极部分， 电连接到半导体衬底。 前钝化部分和后钝化部分都包括氧化硅层。 前钝化部分和后钝化部分之一包括氧化铝层。

公开(公告)号：US20180315866A1

公开(公告)日：2018-11-01

申请号：US15962697

申请日：2018-04-25

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa CHEONG ,  Yundeok YOON ,  Jaesung KIM ,  Junyong AHN

IPC: H01L31/0236 ,  H01L31/18

Abstract: Disclosed is a solar cell including: a semiconductor substrate; a first conductive region formed at a first surface of the semiconductor substrate and having a first conductivity type; a second conductive region formed on a second surface of the semiconductor substrate opposite to the first surface, and having a second conductivity type opposite to the first conductivity type, wherein the second conductive region including a semiconductor layer different and separated from the semiconductor substrate; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The second surface of the semiconductor substrate has a rounded uneven member having a rounded end portion.

公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

Abstract: Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。

公开(公告)号：US20150303348A1

公开(公告)日：2015-10-22

申请号：US14788057

申请日：2015-06-30

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Junyong AHN ,  Jinho KIM

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A manufacturing method of selective emitter solar cell can include, forming an emitter layer positioned on a light receiving surface of the substrate having a first conductive type, the emitter layer having a second conductive type opposite to the first conductive type, forming a first emitter portion having a first impurity concentration and a second emitter portion having a second impurity concentration higher than the first impurity concentration on the emitter layer using a etch stop mask or a mask pattern, and forming a plurality of first electrodes connected to the second emitter portion, wherein the second emitter portion includes a first region that contacts the first electrodes and overlaps the first electrodes and a second region that is positioned around the first region and does not overlap the first electrodes, and the line width of the second region is more than the line width of each first electrode and less than four times the line width of each first electrode.

Abstract translation: 选择性发射太阳能电池的制造方法可以包括：形成位于具有第一导电类型的基板的受光面上的发射极层，发射极层具有与第一导电类型相反的第二导电类型，形成第一发射极部分 使用蚀刻停止掩模或掩模图案，具有第一杂质浓度和第二发射极部分，其具有高于发射极层上的第一杂质浓度的第二杂质浓度，以及形成连接到第二发射极部分的多个第一电极，其中 第二发射极部分包括接触第一电极并与第一电极重叠的第一区域和位于第一区域周围并且不与第一电极重叠的第二区域，并且第二区域的线宽大于线 每个第一电极的宽度小于每个第一电极的线宽度的四倍。

公开(公告)号：US20150228843A1

公开(公告)日：2015-08-13

申请号：US14691396

申请日：2015-04-20

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Junyong AHN ,  Jinho KIM

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/186 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.

Abstract translation: 讨论了太阳能电池的制造方法。 所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子 具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。