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    Method of manufacturing solar cell
    1.
    发明授权
    Method of manufacturing solar cell 有权

    公开(公告)号：US10461213B2

    公开(公告)日：2019-10-29

    申请号：US15924976

    申请日：2018-03-19

    Applicant: LG ELECTRONICS INC.

    Inventor： Kyoungsoo Lee ,  Sangwook Park

    IPC: H01L31/20 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0747

    Abstract: A method of manufacturing a solar cell includes forming a photoelectric converter including an amorphous semiconductor layer, forming an electrode connected to the photoelectric converter, and performing a post-treatment by providing light to the photoelectric converter and the electrode, wherein, in the performing of the post-treatment, a plasma lighting system (PLS) is used as a light source, and a processing temperature is within a range from about 100° C. to about 300° C.

    Method for manufacturing solar cell
    3.
    发明授权
    Method for manufacturing solar cell 有权

    公开(公告)号：US09698300B2

    公开(公告)日：2017-07-04

    申请号：US14733620

    申请日：2015-06-08

    Applicant: LG ELECTRONICS INC.

    Inventor： Kyoungsoo Lee ,  Minho Choi ,  Jinhyung Lee ,  Gyeayoung Kwag ,  Sangwook Park

    IPC: H01L21/00 ,  H01L31/18 ,  H01L21/30

    CPC classification number: H01L31/1864 ,  H01L21/3003 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method of manufacturing a solar cell is discussed. The method of manufacturing the solar cell includes: forming a conductive region on a semiconductor substrate; forming an electrode connected to the conductive region; and post-processing the semiconductor substrate to passivate the semiconductor substrate. The post-processing of the semiconductor substrate comprises a main processing process for heat-treating the semiconductor substrate while providing light to the semiconductor substrate. A temperature of the main processing process is about 100° C. to about 800° C., and the temperature and light intensity of the main processing process satisfy Equation of 1750−31.8·T+(0.16)·T2≦I. Here, T is the temperate (° C.) of the main processing process, and I is the light intensity (mW/cm2) of the main processing process.

    Solar cell and method of manufacturing
    5.
    发明授权
    Solar cell and method of manufacturing 有权

    公开(公告)号：US10453983B2

    公开(公告)日：2019-10-22

    申请号：US15381529

    申请日：2016-12-16

    Applicant: LG ELECTRONICS INC.

    Inventor： Kyoungsoo Lee ,  Sangwook Park ,  Jinhyung Lee

    IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/072 ,  H01L31/18 ,  H01L31/074 ,  H01L31/0747

    Abstract: Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of a same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of a conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20150162467A1

    公开(公告)日：2015-06-11

    申请号：US14605394

    申请日：2015-01-26

    Applicant: LG Electronics Inc.

    Inventor： Kyoungsoo Lee ,  Seongeun Lee

    IPC: H01L31/0376 ,  H01L31/0224

    CPC classification number: H01L31/0376 ,  H01L25/042 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

    Abstract: A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

    Abstract translation: 一种制造太阳能电池的方法包括：制备具有第一导电型掺杂剂的半导体衬底; 将前非晶化元件离子注入半导体衬底的前表面以形成非晶层; 以及通过将第二导电型掺杂剂离子注入到所述半导体衬底的前表面中形成发射极层。 然后该方法还包括热处理层以激活第二导电型掺杂剂。 该方法还包括通过离子注入第一导电型掺杂剂在半导体衬底的背面形成背表面场层。

    Method of manufacturing solar cell
    8.
    发明授权
    Method of manufacturing solar cell 有权

    公开(公告)号：US10593558B2

    公开(公告)日：2020-03-17

    申请号：US15866052

    申请日：2018-01-09

    Applicant: LG ELECTRONICS INC.

    Inventor： Kyoungsoo Lee ,  Sunghyun Hwang ,  Sangwook Park

    IPC: H01L21/00 ,  H01L21/3205 ,  H01L21/28 ,  H01L21/02 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/20

    Abstract: A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.

    Solar cell and method for manufacturing the same
    9.
    发明授权
    Solar cell and method for manufacturing the same 有权

    公开(公告)号：US09768342B2

    公开(公告)日：2017-09-19

    申请号：US14831615

    申请日：2015-08-20

    Applicant: LG ELECTRONICS INC.

    Inventor： Kyoungsoo Lee ,  Manhyo Ha

    IPC: H01L31/044 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/068

    CPC classification number: H01L31/186 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/068 ,  Y02E10/547

    Abstract: A method for manufacturing a solar cell includes forming a first dielectric layer on a second surface opposite a first surface of a substrate; forming second dielectric layers respectively on an emitter region and the first dielectric layer; forming a third dielectric layer on the second dielectric layer that is positioned on the emitter region; forming a hydrogenated silicon oxide layer on the third dielectric layer; forming a first electrode on the emitter region and connected to the emitter region; and forming a second electrode on the second surface of the substrate and connected to the substrate, wherein the first surface of the substrate has first and second textured surfaces, and wherein the first textured surface includes a plurality of first protrusions and a plurality of first depressions and the second textured surface includes a plurality of second protrusions and a plurality of second depressions.

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