利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.049 秒)

    Selective filtering of wavelength-converted semiconductor light emitting devices
    8.
    发明授权
    Selective filtering of wavelength-converted semiconductor light emitting devices 有权
    波长转换半导体发光器件的选择滤波

    公开(公告)号：US06744077B2

    公开(公告)日：2004-06-01

    申请号：US10260090

    申请日：2002-09-27

    申请人： Troy A. Trottier ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Michael R. Krames

    发明人： Troy A. Trottier ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Michael R. Krames

    IPC分类号： H01L3300

    CPC分类号： H01L33/44 ,  H01L33/50 ,  H01L2224/14

    摘要： A light emitting device includes a semiconductor light emitting device chip having a top surface and a side surface, a wavelength-converting material overlying at least a portion of the top surface and the side surface of the chip, and a filter material overlying the wavelength-converting material. The chip is capable of emitting light of a first wavelength, the wavelength-converting material is capable of absorbing light of the first wavelength and emitting light of a second wavelength, and the filter material is capable of absorbing light of the first wavelength. In other embodiments, a light emitting device includes a filter material capable of reflecting light of a first wavelength and transmitting light of a second wavelength.

    摘要翻译： 发光装置包括具有顶表面和侧表面的半导体发光器件芯片，覆盖在芯片的顶表面和侧表面的至少一部分上的波长转换材料，以及覆盖波长转换材料的过滤材料， 转换材料。 该芯片能够发射第一波长的光，波长转换材料能够吸收第一波长的光并发射第二波长的光，并且滤光片材料能够吸收第一波长的光。 在其他实施例中，发光器件包括能够反射第一波长的光并透射第二波长的光的滤光材料。

    Heterostructures for III-nitride light emitting devices
    9.
    发明授权
    Heterostructures for III-nitride light emitting devices 有权
    III族氮化物发光器件的异质结构

    公开(公告)号：US06995389B2

    公开(公告)日：2006-02-07

    申请号：US10465775

    申请日：2003-06-18

    申请人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    发明人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

    IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

    摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.

    摘要翻译： 公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。 在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。 在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。 在一些实施例中，储层被分级。 在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。 在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。

    Light emitting device including a filter
    10.
    发明授权
    Light emitting device including a filter 有权
    包括滤光器的发光器件

    公开(公告)号：US08704254B2

    公开(公告)日：2014-04-22

    申请号：US11615291

    申请日：2006-12-22

    申请人： Troy A. Trottier ,  Matthijs H. Keuper

    发明人： Troy A. Trottier ,  Matthijs H. Keuper

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor structure includes a light emitting region disposed between an n-type region and a p-type region. A wavelength converting material configured to absorb a portion of the first light emitted by the light emitting region and emit second light is disposed in a path of the first light. A filter is disposed in a path of the first and second light. In some embodiments, the filter absorbs or reflects a fraction of first light at an intensity greater than a predetermined intensity. In some embodiments, the filter absorbs or reflects a portion of the second light. In some embodiments, a quantity of filter material is disposed in the path of the first and second light, then the CCT of the first and second light passing through the filter is detected. Filter material may be removed to correct the detected CCT to a predetermined CCT.

    摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的发光区域。 配置成吸收由发光区域发射的第一光的一部分并发射第二光的波长转换材料设置在第一光的路径中。 滤光器设置在第一和第二光的路径中。 在一些实施例中，过滤器以大于预定强度的强度吸收或反射第一光的一部分。 在一些实施例中，过滤器吸收或反射第二光的一部分。 在一些实施例中，一定量的过滤材料设置在第一和第二光的路径中，然后检测穿过过滤器的第一和第二光的CCT。 可以去除过滤材料以将检测到的CCT校正到预定的CCT。