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29 条记录 (耗时 0.045 秒)

    Chirped multi-well active region LED
    8.
    发明授权
    Chirped multi-well active region LED 失效
    啁啾多功能区LED

    公开(公告)号：US06504171B1

    公开(公告)日：2003-01-07

    申请号：US09490777

    申请日：2000-01-24

    申请人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    发明人： Patrick N. Grillot ,  Christopher P. Kocot ,  Michael R. Krames ,  Eugene I. Chen ,  Stephen A. Stockman ,  Ying-Lan Chang ,  Robert C. Taber

    IPC分类号： H01L2906

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.

    摘要翻译： 发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率 在有源区域的发光有源层（即，跨过有源区域）的分布曲线。 啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布 活性区内的组成。 因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。 器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。 发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

    Imaging through silhouetting
    9.
    发明授权
    Imaging through silhouetting 有权
    成像通过silhouetting

    公开(公告)号：US07843383B2

    公开(公告)日：2010-11-30

    申请号：US11552749

    申请日：2006-10-25

    申请人： William Weems ,  Robert C. Taber

    发明人： William Weems ,  Robert C. Taber

    IPC分类号： G01S13/89 ,  G01S13/00

    CPC分类号： G01S13/89

    摘要： Improved microwave imaging using a reflector. By providing a reflective surface in the range of the imaging system, additional information is available for imaging objects. The relative surface provides silhouette information on the object, and increases the effective thickness of the object to aid analysis.

    摘要翻译： 使用反射镜改进微波成像。 通过在成像系统的范围内提供反射表面，附加信息可用于成像对象。 反射表面提供对象的轮廓信息，并增加对象的有效厚度以辅助分析。

    Mode selective coupler for whispering-gallery dielectric resonator
    10.
    发明授权
    Mode selective coupler for whispering-gallery dielectric resonator 有权
    用于耳语架介质谐振器的模式选择耦合器

    公开(公告)号：US07777583B2

    公开(公告)日：2010-08-17

    申请号：US12126296

    申请日：2008-05-23

    申请人： Robert C. Taber ,  Curt Alan Flory

    发明人： Robert C. Taber ,  Curt Alan Flory

    IPC分类号： H03B5/30 ,  H01P7/10

    CPC分类号： H01P7/10 ,  H03B5/187

    摘要： A whispering gallery mode dielectric resonator includes a conductive enclosure comprising a top, a bottom and walls. The resonator also includes a dielectric element disposed in the enclosure and operative to support a desired resonant mode that is dependent on a shape and dimensions of the dielectric resonator; and a mode selective coupling structure disposed over the enclosure and configured to selectively couple electromagnetic energy of the desired mode and configured not to substantially couple electromagnetic energy of a spurious mode supported in a region between the enclosure and the dielectric element.

    摘要翻译： 耳语画廊模式介质谐振器包括一个包括顶部，底部和墙壁的导电外壳。 谐振器还包括设置在外壳中并且可操作地支撑取决于介质谐振器的形状和尺寸的期望谐振模式的电介质元件; 以及模式选择耦合结构，其设置在所述外壳上并且被配置为选择性地耦合所述期望模式的电磁能并且被配置为不基本上耦合支撑在所述外壳和所述电介质元件之间的区域中的寄生模式的电磁能。