Selective filtering of wavelength-converted semiconductor light emitting devices
    8.
    发明授权
    Selective filtering of wavelength-converted semiconductor light emitting devices 有权
    波长转换半导体发光器件的选择滤波

    公开(公告)号:US06744077B2

    公开(公告)日:2004-06-01

    申请号:US10260090

    申请日:2002-09-27

    IPC分类号: H01L3300

    摘要: A light emitting device includes a semiconductor light emitting device chip having a top surface and a side surface, a wavelength-converting material overlying at least a portion of the top surface and the side surface of the chip, and a filter material overlying the wavelength-converting material. The chip is capable of emitting light of a first wavelength, the wavelength-converting material is capable of absorbing light of the first wavelength and emitting light of a second wavelength, and the filter material is capable of absorbing light of the first wavelength. In other embodiments, a light emitting device includes a filter material capable of reflecting light of a first wavelength and transmitting light of a second wavelength.

    摘要翻译: 发光装置包括具有顶表面和侧表面的半导体发光器件芯片,覆盖在芯片的顶表面和侧表面的至少一部分上的波长转换材料,以及覆盖波长转换材料的过滤材料, 转换材料。 该芯片能够发射第一波长的光,波长转换材料能够吸收第一波长的光并发射第二波长的光,并且滤光片材料能够吸收第一波长的光。 在其他实施例中,发光器件包括能够反射第一波长的光并透射第二波长的光的滤光材料。

    Selective filtering of wavelength-converted semiconductor light emitting devices
    10.
    发明授权
    Selective filtering of wavelength-converted semiconductor light emitting devices 失效
    波长转换半导体发光器件的选择滤波

    公开(公告)号:US07026663B2

    公开(公告)日:2006-04-11

    申请号:US10855295

    申请日:2004-05-26

    IPC分类号: H01L33/00

    摘要: A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

    摘要翻译: 一种结构包括半导体发光器件,其包括设置在n型区域和p型区域之间的发光层。 发光层发射第一峰值波长的第一光。 吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。 透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。