公开(公告)号：US06995389B2

公开(公告)日：2006-02-07

申请号：US10465775

申请日：2003-06-18

申请人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

发明人： James C. Kim ,  Nathan F. Gardner ,  Michael R. Krames ,  Yu-Chen Shen ,  Troy A. Trottier ,  Jonathan J. Wierer, Jr.

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/34333 ,  H01S5/34346

摘要： Heterostructure designs are disclosed that may increase the number of charge carriers available in the quantum well layers of the active region of III-nitride light emitting devices such as light emitting diodes. In a first embodiment, a reservoir layer is included with a barrier layer and quantum well layer in the active region of a light emitting device. In some embodiments, the reservoir layer is thicker than the barrier layer and quantum well layer, and has a greater indium composition than the barrier layer and a smaller indium composition than the quantum well layer. In some embodiments, the reservoir layer is graded. In a second embodiment, the active region of a light emitting device is a superlattice of alternating quantum well layers and barrier layers. In some embodiments, the barrier layers are thin such that charge carriers can tunnel between quantum well layers through a barrier layer.

摘要翻译： 公开了异质结构设计，其可以增加III族氮化物发光器件（例如发光二极管）的有源区的量子阱层中可用的电荷载体的数量。 在第一实施例中，存储层包括在发光器件的有源区中的势垒层和量子阱层。 在一些实施例中，储存层比阻挡层和量子阱层厚，并且具有比阻挡层更大的铟组成和比量子阱层更小的铟组成。 在一些实施例中，储层被分级。 在第二实施例中，发光器件的有源区是交替的量子阱层和阻挡层的超晶格。 在一些实施例中，阻挡层是薄的，使得电荷载流子可以通过势垒层在量子阱层之间隧穿。

公开(公告)号：US07808011B2

公开(公告)日：2010-10-05

申请号：US10805424

申请日：2004-03-19

申请人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, Jr.

发明人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, Jr.

IPC分类号： H01L33/00

CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。

公开(公告)号：US20100226404A1

公开(公告)日：2010-09-09

申请号：US12781935

申请日：2010-05-18

申请人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, JR.

发明人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, JR.

IPC分类号： H01S5/125 ,  H01L33/46

CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。

公开(公告)号：US08174025B2

公开(公告)日：2012-05-08

申请号：US11423413

申请日：2006-06-09

申请人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

发明人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光层的半导体结构。 多孔区域设置在发光层和电连接到n型区域和p型区域之一的接触点之间。 多孔区域将光从吸收接触点散开，这可以改善从设备的光提取。 在一些实施例中，多孔区域是诸如GaN或GaP的n型半导体材料。

公开(公告)号：US20070284607A1

公开(公告)日：2007-12-13

申请号：US11423413

申请日：2006-06-09

申请人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

发明人： John E. Epler ,  Michael R. Krames ,  Hanmin Zhao ,  James C. Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光层的半导体结构。 多孔区域设置在发光层和电连接到n型区域和p型区域之一的接触点之间。 多孔区域将光从吸收接触点散开，这可以改善从设备的光提取。 在一些实施例中，多孔区域是诸如GaN或GaP的n型半导体材料。

公开(公告)号：US07285799B2

公开(公告)日：2007-10-23

申请号：US10829141

申请日：2004-04-21

申请人： James C. Kim ,  Yu-Chen Shen

发明人： James C. Kim ,  Yu-Chen Shen

IPC分类号： H01L27/15 ,  H01L29/24

CPC分类号： H01L33/18 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 Å.

摘要翻译： 半导体发光器件包括具有纤锌矿晶体结构的平面发光层，其具有大致平行于该层平面的<0001>轴，被称为面内发光层。 面内发光层可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，面内发光层的厚度大于50。

公开(公告)号：US20120025169A1

公开(公告)日：2012-02-02

申请号：US12848722

申请日：2010-08-02

申请人： Danny E. Mars ,  James C. Kim ,  Sungsoo Yi

发明人： Danny E. Mars ,  James C. Kim ,  Sungsoo Yi

IPC分类号： H01L29/775 ,  H01L21/336 ,  H01L29/737

CPC分类号： H01L29/732 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66856 ,  H01L29/7371 ,  H01L29/775 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/8122

摘要： Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.

摘要翻译： 本文公开了用于从纳米结构体组形成晶体管的晶体管和方法。 晶体管可以由在衬底上垂直生长的纳米结构阵列形成。 纳米结构可以具有可以用不同材料和/或掺杂形成以获得期望效果的下部，中部和上部部分。 总的来说，下段可形成源或漏，中间段共同形成通道。 或者，下段可以共同形成发射器或集电器，中间段共同形成基座。 晶体管电极可以是围绕纳米结构侧壁的平面金属结构。 晶体管可以是场效应晶体管（FET）或双极结型晶体管（BJT）。 异质结双极结晶体管（HBT）和高电子迁移率晶体管（HEMT）是可能的。

公开(公告)号：US20110297913A1

公开(公告)日：2011-12-08

申请号：US12796569

申请日：2010-06-08

申请人： James C. Kim ,  Sungsoo Yi ,  Danny E. Mars

发明人： James C. Kim ,  Sungsoo Yi ,  Danny E. Mars

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L33/04 ,  H01L21/30

CPC分类号： H01L33/18 ,  B82Y10/00 ,  H01L25/0756 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.

摘要翻译： 公开了纳米结构阵列光电器件。 光电子器件可以具有物理和电连接到纳米结构阵列（例如，纳米柱）的侧壁的顶部电接触。 顶部电接触可以被定位成使得光可以进入或离开纳米结构而不通过顶部电接触。 因此，顶部电接触可以对具有由纳米结构中的活性区域吸收或产生的波长的光是不透明的。 顶部电接触可以由高导电性的材料制成，因为不需要在光学透明度和电导率之间进行折衷。 该装置可以是太阳能电池，LED，光电检测器等

公开(公告)号：US08026117B2

公开(公告)日：2011-09-27

申请号：US12421048

申请日：2009-04-09

申请人： James C. Kim ,  Stephen A. Stockman

发明人： James C. Kim ,  Stephen A. Stockman

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01S5/0424

摘要： A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.

摘要翻译： 半导体发光器件包括有源区，n型区和包括延伸到有源区的部分的p型区。 有源区可以包括由势垒层分隔开的多个量子阱，并且p型延伸部穿透至少一个量子阱层。 通过向各个量子阱提供直流电流路径，p型区域延伸到有源区域中的扩展可以提供对有源区域的各个量子阱中的载流子的均匀填充。 这种均匀填充可以通过降低最接近体p型区域的量子阱中的载流子密度来提高高电流密度下的操作效率，从而减少对非辐射复合物损失的载流子数量。

公开(公告)号：US20080156366A1

公开(公告)日：2008-07-03

申请号：US11648059

申请日：2006-12-29

申请人： James C. Kim ,  Sungsoo Yi

发明人： James C. Kim ,  Sungsoo Yi

IPC分类号： H01L31/0304 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0352 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/043 ,  H01L31/0725 ,  H01L31/0735 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.

摘要翻译： 提供了一种具有分级能量阱的太阳能电池的方法和装置。 太阳能电池的有源区包括纳米结构。 纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。 例如，III-V族化合物半导体可以是氮化镓（GaN）。 作为示例，“带隙改变元件”可以是铟（In）。 活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。 能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。