公开(公告)号：US06236112B1

公开(公告)日：2001-05-22

申请号：US09434113

申请日：1999-11-05

申请人： Michio Horiuchi ,  Takuya Kazama

发明人： Michio Horiuchi ,  Takuya Kazama

IPC分类号： H01L2144

CPC分类号： H01L23/49827 ,  H01L21/486 ,  H01L23/49816 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device having a semiconductor element and a connecting substrate, wherein the connecting substrate includes a flat sheet-like insulation member, having first and second surfaces. The first surface is provided with solder bumps projecting at locations corresponding to locations of electrodes on an electrode/terminal-formed face of the semiconductor element, or terminals formed at ends of patterned wirings formed by rerouting a conductive material on the electrode/terminal-formed fact. The second surface is provided with external connection terminals having a larger diameter than the solder bumps on the first surface and being electrically connected with the solder bumps through a via piercing the insulation member in the direction of its thickness. The semiconductor element is mounted on the connecting substrate by bonding the electrodes or the terminals on the electrode/terminal-formed face of the semiconductor element to the solder bumps.

摘要翻译： 一种具有半导体元件和连接基板的半导体器件，其中所述连接基板包括具有第一表面和第二表面的平坦片状绝缘部件。 第一表面设置有在与半导体元件的电极/端子形成面上的电极位置相对应的位置处突出的焊料凸块，或者形成在图案化布线的端部处形成的端子，其通过在电极/端子形成上重新布置导电材料而形成 事实。 第二表面设置有具有比第一表面上的焊料凸块更大的直径的外部连接端子，并且通过穿过该绝缘构件的厚度方向的通孔与焊料凸块电连接。 通过将半导体元件的电极/端子形成面上的电极或端子接合到焊料凸块，将半导体元件安装在连接基板上。

公开(公告)号：US06404214B1

公开(公告)日：2002-06-11

申请号：US09468060

申请日：1999-12-20

申请人： Shigetsugu Muramatsu ,  Michio Horiuchi ,  Takuya Kazama

发明人： Shigetsugu Muramatsu ,  Michio Horiuchi ,  Takuya Kazama

IPC分类号： G01R3102

CPC分类号： H05K1/112 ,  G01R31/2886 ,  H01L2224/16237 ,  H05K1/0393 ,  H05K3/06 ,  H05K3/325 ,  H05K2201/0394 ,  H05K2201/09472 ,  H05K2201/10734

摘要： A substrate for inspecting an electronic device used for an electrical test of the electronic device having bump-shaped connection terminals, comprises: opening sections, the diameter of each opening being determined so that a connection terminal can be inserted into and drawn out from the opening, are formed penetrating the insulating substrate in a region on one side of an insulating substrate on which the electronic device is mounted, corresponding to an arrangement of the connection terminals; and wiring patterns, each of which is composed of a pad section being exposed onto a bottom face of the opening so that the pad can come into contact with the connection terminal so as to accomplish electrical continuity, a connecting pad section formed in a region outside of the region in which the pad section is formed, which comes into contact with a contact terminal of an inspection device so as to accomplish electrical continuity, and a wiring section for electrically connecting the pad section with the connecting pad section, are formed on the other side of the insulating substrate.

摘要翻译： 一种用于检查用于具有凸起形连接端子的电子设备的电气测试的电子设备的基板，包括：开口部分，每个开口的直径被确定为使得连接端子能够从开口插入和拉出 对应于连接端子的布置，在安装有电子设备的绝缘基板的一侧的区域中穿过绝缘基板; 以及布线图案，每个布线图案由暴露于开口的底面的焊盘部分组成，使得焊盘能够与连接端子接触以实现电连续性;连接焊盘部分形成在外部区域 形成有与检查装置的接触端子接触以实现电连续性的形成有焊盘部的区域，以及用于将焊盘部与连接焊盘部电连接的布线部，形成在 绝缘基板的另一侧。

公开(公告)号：US08354685B2

公开(公告)日：2013-01-15

申请号：US13026633

申请日：2011-02-14

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46

摘要： A semiconductor light emitting device which can suppress the self-absorption of light propagating in a semiconductor film without hindering current spread therein. A reflecting film provided between a support substrate and the semiconductor film of the device includes reflecting electrodes that are in ohmic contact with the semiconductor film and that form current paths between the reflecting electrodes and surface electrodes in the semiconductor film. The reflecting electrodes are in contact with the semiconductor film at such positions that the surface electrodes, provided on the light-extraction-surface-side surface of the semiconductor film, are not over the reflecting electrodes along a direction of the thickness of the semiconductor film. The semiconductor film has reflecting-surface-side recesses made in regions containing regions directly under the surface electrodes and recessed toward the light-extraction-surface side, and reflecting-surface-side protrusions provided in regions containing parts of the semiconductor film in contact with the reflecting electrodes and bonded to the support substrate via the reflecting film.

摘要翻译： 一种半导体发光器件，其可以抑制在半导体膜中传播的光的自吸收，而不会妨碍其中的电流扩散。 设置在支撑基板和器件的半导体膜之间的反射膜包括与半导体膜欧姆接触的反射电极，并且在半导体膜中的反射电极和表面电极之间形成电流路径。 反射电极在半导体膜的在光提取面侧表面上设置的表面电极沿着半导体膜的厚度方向不在反射电极的位置与半导体膜接触 。 半导体膜具有在直接在表面电极下面的区域的区域中形成的反射表面侧凹部，并且朝向光提取面侧凹陷，并且设置在包含与半导体膜的部分接触的区域中的反射面侧突起 反射电极并通过反射膜结合到支撑基板。

公开(公告)号：US20100224898A1

公开(公告)日：2010-09-09

申请号：US12716583

申请日：2010-03-03

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： In an optical semiconductor device including an epitaxially-grown light emitting semiconductor layer and a reflective electrode layer provided at a counter face of the light emitting semiconductor layer opposing a light extracting face thereof, a support electrode layer is provided between the reflective electrode layer and the counter face of the light emitting semiconductor layer and is adapted to support the light emitting semiconductor layer and electrically connect the light emitting semiconductor layer to the reflective electrode layer. Also, a total area of the support electrode layer is smaller than an area of the reflective electrode layer. Further, an air gap at a periphery of the support electrode layer and the reflective electrode layer serves as a reflective mirror.

摘要翻译： 在包括外延生长的发光半导体层和设置在发光半导体层的与光提取面相对的对面的反射电极层的光半导体器件中，在反射电极层和反射电极层之间设置有支撑电极层 并且适于支撑发光半导体层并将发光半导体层电连接到反射电极层。 此外，支撑电极层的总面积小于反射电极层的面积。 此外，支撑电极层和反射电极层的周围的气隙用作反射镜。

公开(公告)号：US08507943B2

公开(公告)日：2013-08-13

申请号：US13430637

申请日：2012-03-26

申请人： Keita Akiyama ,  Takuya Kazama

发明人： Keita Akiyama ,  Takuya Kazama

IPC分类号： H01L33/48

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/22

摘要： A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed soas not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.

摘要翻译： 具有对电极结构的半导体发光元件可以包括：第一电极，包括至少一个线性第一电极片，该线性第一电极片设置在靠近所述支撑衬底的第一半导体层的表面上，并与所述第一半导体层欧姆接触; 第二电极，其包括设置在第二半导体层的表面上并与第二半导体层欧姆接触的至少一个线性第二电极片。 可以在第二半导体层上形成多个锥形突起。 第一电极片和第二电极片可以在半导体发光层叠体的堆叠方向上彼此不重叠，而是从上方观察时彼此平行。

公开(公告)号：US08405113B2

公开(公告)日：2013-03-26

申请号：US13194056

申请日：2011-07-29

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L33/22

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions. The second cladding layer has a stacked structure, which includes a first current-spreading layer, a first light-extracting layer on the first current-spreading layer and having the light-extracting structure on the bottom surfaces of the recesses, a second current-spreading layer on the first light-extracting layer, and a second light-extracting layer on the second current-spreading layer and having the light-extracting structure on the top surfaces of the protrusions, and the first and second light-extracting layer have lower light absorptance and higher resistance than the first and second current-spreading layer.

摘要翻译： 半导体发光器件包括在支撑体上的反射电极; 第一包层; 发光层; 具有由凹部和突起形成的露台结构的第二包层，在所述凹部的突起和底面的上表面上形成有具有突起和凹陷的光提取结构; 以及在突起的顶表面上的表面电极。 第二包层具有叠层结构，其包括第一电流扩散层，第一电流扩展层上的第一光提取层，并且在凹部的底表面上具有取光结构，第二电流扩散层， 第一光提取层上的扩散层和第二电流扩散层上的第二光提取层，并且在突起的顶表面上具有光提取结构，并且第一和第二光提取层具有较低的 光吸收和比第一和第二电流扩展层更高的电阻。

公开(公告)号：US20120241808A1

公开(公告)日：2012-09-27

申请号：US13430637

申请日：2012-03-26

申请人： Keita Akiyama ,  Takuya Kazama

发明人： Keita Akiyama ,  Takuya Kazama

IPC分类号： H01L33/48

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/22

摘要： A semiconductor light-emitting element with a counter electrode structure can include a first electrode including at least one linear first electrode piece that is disposed on a surface of a first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer, a second electrode including at least one linear second electrode piece that is disposed on a surface of a second semiconductor layer and in ohmic contact with the second semiconductor layer. A plurality of conical projections can be formed on the second semiconductor layer. The first electrode piece and the second electrode piece can be disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above.

摘要翻译： 具有对电极结构的半导体发光元件可以包括：第一电极，包括至少一个线性第一电极片，该线性第一电极片设置在靠近所述支撑衬底的第一半导体层的表面上，并与所述第一半导体层欧姆接触; 第二电极，其包括设置在第二半导体层的表面上并与第二半导体层欧姆接触的至少一个线性第二电极片。 可以在第二半导体层上形成多个锥形突起。 第一电极片和第二电极片可以在半导体发光层叠体的堆叠方向上彼此不重叠，而是从上方观察时彼此平行。

公开(公告)号：US20100112786A1

公开(公告)日：2010-05-06

申请号：US12608296

申请日：2009-10-29

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor substrate has a plurality of semiconductor chip forming areas and scribe areas including substrate cutting positions arranged between the plurality of semiconductor chip forming areas. An insulating layer having first opening portions, which expose all or a part of the scribe areas respectively, is formed on the semiconductor substrate. A solder resist layer having second opening portions, which expose all or a part of the scribe areas respectively, is formed on the insulating layer. Portions of the semiconductor substrate corresponding to the substrate cutting positions are cut.

摘要翻译： 半导体衬底具有多个半导体芯片形成区域和划线区域，包括布置在多个半导体芯片形成区域之间的衬底切割位置。 在半导体基板上形成具有分别露出全部或一部分划线区域的第一开口部分的绝缘层。 在绝缘层上形成具有第二开口部分的焊料层，其分别露出划线区域的全部或一部分。 切割对应于基板切割位置的半导体基板的部分。

公开(公告)号：US20090045529A1

公开(公告)日：2009-02-19

申请号：US12190789

申请日：2008-08-13

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/94 ,  H01L2221/68377 ,  H01L2224/02313 ,  H01L2224/02321 ,  H01L2224/02333 ,  H01L2224/02351 ,  H01L2224/0401 ,  H01L2224/05556 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14

摘要： There is provided a method of manufacturing a semiconductor device. The method includes the successive steps of: (a) providing a semiconductor substrate; (b) forming a plurality of semiconductor chips having electrode pads on the semiconductor substrate; (c) forming internal connection terminals on the electrode pads; (d) forming an insulating layer on the plurality of semiconductor chips to cover the internal connection terminals; (e) forming a metal layer on the insulating layer; (f) pushing a whole area of the metal layer to bring the metal layer into contact with upper end portions of the internal connection terminals; (g) pushing portions of the metal layer which contact the upper end portions of the internal connection terminals, thereby forming first recesses in the internal connection terminals, and thereby forming second recesses in the metal layer; and (h) forming wiring patterns by etching the metal layer.

摘要翻译： 提供了制造半导体器件的方法。 该方法包括以下连续步骤：（a）提供半导体衬底; （b）在半导体衬底上形成具有电极焊盘的多个半导体芯片; （c）在电极焊盘上形成内部连接端子; （d）在所述多个半导体芯片上形成绝缘层以覆盖所述内部连接端子; （e）在所述绝缘层上形成金属层; （f）推动金属层的整个区域使金属层与内部连接端子的上端部接触; （g）推动与内部连接端子的上端部接触的金属层的部分，从而在内部连接端子中形成第一凹部，从而在金属层中形成第二凹部; 和（h）通过蚀刻金属层形成布线图案。

公开(公告)号：US08575627B2

公开(公告)日：2013-11-05

申请号：US13567202

申请日：2012-08-06

申请人： Takuya Kazama

发明人： Takuya Kazama

IPC分类号： H01L27/15 ,  H01L29/161 ,  H01L31/12 ,  H01L31/153 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016 ,  H01L2933/0083

摘要： A semiconductor light emitting element of the present invention includes a support substrate, a semiconductor film including a light emitting layer, a surface electrode provided on the surface on a light-extraction-surface side of the semiconductor film, and a light reflecting layer. The surface electrode includes first electrode pieces that form ohmic contact with the semiconductor film and a second electrode piece electrically connected to the first electrode pieces. The light reflecting layer includes a reflecting electrode, and the reflecting electrode includes third electrode pieces that form ohmic contact with the semiconductor film and a fourth electrode piece electrically connected to the third electrode pieces and placed opposite to the second electrode piece. Both the second electrode piece and the fourth electrode piece form Schottky contact with the semiconductor film so as to form barriers to prevent forward current in the semiconductor film.

摘要翻译： 本发明的半导体发光元件包括支撑基板，包括发光层的半导体膜，设置在半导体膜的光提取面侧的表面上的表面电极和光反射层。 表面电极包括与半导体膜形成欧姆接触的第一电极片和与第一电极片电连接的第二电极片。 光反射层包括反射电极，反射电极包括与半导体膜形成欧姆接触的第三电极片和与第三电极片电连接并与第二电极片相对设置的第四电极片。 第二电极片和第四电极片都与半导体膜形成肖特基接触，从而形成屏障以防止半导体膜中的正向电流。