公开(公告)号：US09219005B2

公开(公告)日：2015-12-22

申请号：US13623756

申请日：2012-09-20

Applicant: Monolithic 3D Inc.

Inventor： Zvi Or-Bach ,  Deepak Sekar ,  Brian Cronquist ,  Ze'ev Wurman

IPC: H01L23/48 ,  H01L21/762 ,  H01L23/544 ,  H01L21/683 ,  H01L27/06 ,  H01L27/092 ,  B82Y10/00 ,  H01L21/84 ,  H01L29/66 ,  H01L27/02 ,  H01L29/78 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L27/11 ,  H01L27/115 ,  H01L27/118 ,  H01L27/12 ,  G11C16/04 ,  G11C16/10 ,  H01L29/786 ,  H01L29/10 ,  H01L23/00 ,  H01L25/065 ,  H01L27/088 ,  G11C11/41 ,  G11C17/18 ,  G11C29/32 ,  G11C29/44

CPC classification number: B82Y10/00 ,  G11C11/41 ,  G11C16/0408 ,  G11C16/0483 ,  G11C16/10 ,  G11C17/18 ,  G11C29/32 ,  G11C29/44 ,  H01L21/6835 ,  H01L21/76254 ,  H01L21/84 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L25/0655 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/0694 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/10802 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/1116 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11807 ,  H01L27/1203 ,  H01L29/1033 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7841 ,  H01L29/785 ,  H01L29/78696 ,  H01L29/7881 ,  H01L29/792 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A 3D IC based mobile system including: a first semiconductor layer including first mono-crystallized transistors, where the first mono-crystallized transistors are interconnected by at least one metal layer including aluminum or copper; a second layer including second mono-crystallized transistors and overlaying the at least one metal layer, where the at least one metal layer is in-between the first semiconductor layer and the second layer; a plurality of thermal paths between the second mono-crystallized transistors and a heat removal apparatus, where at least one of the plurality of thermal paths includes a thermal contact adapted to conduct heat and not conduct electricity; and a heat spreader layer between the second layer and the at least one metal layer.

Abstract translation: 一种基于3D IC的移动系统，包括：包括第一单结晶晶体管的第一半导体层，其中第一单结晶晶体管通过包括铝或铜的至少一个金属层互连; 第二层，包括第二单结晶晶体管并且覆盖所述至少一个金属层，其中所述至少一个金属层在所述第一半导体层和所述第二层之间; 所述第二单结晶晶体管和散热装置之间的多个热路径，其中所述多个热路径中的至少一个包括适于传导热量而不导电的热接触; 以及在所述第二层和所述至少一个金属层之间的散热层。