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公开(公告)号：US10395809B2
公开(公告)日：2019-08-27
申请号：US15591348
申请日：2017-05-10
Inventor： Shigeki Takahashi , Yoshiaki Sonobe , Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Jun Liu
Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0
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公开(公告)号：US10305027B2
公开(公告)日：2019-05-28
申请号：US15699749
申请日：2017-09-08
Inventor： Yushi Kato , Tadaomi Daibou , Yuuzo Kamiguchi , Naoharu Shimomura , Junichi Ito , Hiroaki Sukegawa , Mohamed Belmoubarik , Po-Han Cheng , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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公开(公告)号：US11107976B2
公开(公告)日：2021-08-31
申请号：US16605418
申请日：2018-06-08
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Ikhtiar , Shinya Kasai , Kazuhiro Hono , Xiandong Xu
IPC: H01L43/02 , H01L27/22 , H01L43/10 , H01L43/12 , H01L43/08 , H01L21/8239 , G11C11/16 , G11B5/39 , H01L27/105
Abstract: According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of Mg1-xXx (0≤x≤0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.
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4.发明授权公开(公告)号：US10205091B2
公开(公告)日：2019-02-12
申请号：US15424515
申请日：2017-02-03
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Jiamin Chen , Yuya Sakuraba , Jun Liu , Hiroaki Sukegawa , Kazuhiro Hono
Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
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公开(公告)号：US11374168B2
公开(公告)日：2022-06-28
申请号：US16640429
申请日：2018-08-29
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani
Abstract: The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl2O4 as a basic configuration.
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Patent Agency Ranking
公开(公告)号：US10199063B2
公开(公告)日：2019-02-05
申请号：US15127527
申请日：2015-03-19
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , G11B5/851 , G11B5/66 , H01F10/30 , H01F10/32 , G11B5/39 , G11C11/16 , H01F10/12
Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
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公开(公告)号：US09842636B2
公开(公告)日：2017-12-12
申请号：US15134514
申请日：2016-04-21
Inventor： Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Tadakatsu Ohkubo , Jun Liu , Shinya Kasai , Kwangseok Kim
CPC classification number: G11C11/161 , H01F10/1933 , H01F10/3286 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0
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公开(公告)号：US11105867B2
公开(公告)日：2021-08-31
申请号：US16074135
申请日：2017-01-31
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono , Kouichiro Inomata
Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0
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公开(公告)号：US10832719B2
公开(公告)日：2020-11-10
申请号：US16214375
申请日：2018-12-10
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , H01F10/32 , G11B5/39 , G11C11/16 , G11B5/851 , H01F10/12 , G11B5/66 , H01F10/30
Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
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公开(公告)号：US10665776B2
公开(公告)日：2020-05-26
申请号：US16275947
申请日：2019-02-14
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Seiji Mitani , Hiroaki Sukegawa , Kazuhiro Hono , Tadakatsu Ohkubo
Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
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