公开(公告)号：US09842636B2

公开(公告)日：2017-12-12

申请号：US15134514

申请日：2016-04-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  SAMSUNG ELECTRONICS COMPANY LIMITED

Inventor： Hiroaki Sukegawa ,  Hwachol Lee ,  Kazuhiro Hono ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Jun Liu ,  Shinya Kasai ,  Kwangseok Kim

IPC: G11C11/16 ,  H01F10/193 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  H01F10/1933 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0

公开(公告)号：US11107976B2

公开(公告)日：2021-08-31

申请号：US16605418

申请日：2018-06-08

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Ikhtiar ,  Shinya Kasai ,  Kazuhiro Hono ,  Xiandong Xu

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L21/8239 ,  G11C11/16 ,  G11B5/39 ,  H01L27/105

Abstract: According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of Mg1-xXx (0≤x≤0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.

公开(公告)号：US20130302649A1

公开(公告)日：2013-11-14

申请号：US13935095

申请日：2013-07-03

Applicant: National Institute for Materials Science

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/16 ,  G11B5/31 ,  C22C19/07 ,  G11B5/39

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: [Problem to be Solved]To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same.[Solution]A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: [待解决的问题]为了实现具有高性能的自旋电子装置，本发明的目的是提供具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 [溶液] Co2Fe（GaxGe1-x）Heusler合金在0.25

公开(公告)号：US11004465B2

公开(公告)日：2021-05-11

申请号：US16311367

申请日：2017-06-23

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinya Kasai ,  Yukiko Takahashi ,  Pohan Cheng ,  Ikhtiar ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82 ,  H01F10/13

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.

公开(公告)号：US09336937B2

公开(公告)日：2016-05-10

申请号：US13935095

申请日：2013-07-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/32 ,  H01F10/16 ,  C22C19/07 ,  G01R33/09 ,  G01R33/12 ,  G11C11/16 ,  H01L43/10 ,  H01F10/193 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  B82Y10/00 ,  B82Y25/00

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: 为了实现具有高性能的自旋电子装置，本发明的目的是提供一种具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 Co2Fe（GaxGe1-x）Heusler合金在0.25