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1.发明授权公开(公告)号：US09508373B2
公开(公告)日：2016-11-29
申请号：US14367348
申请日：2013-03-22
Applicant: National Institute for Materials Science
Inventor： Masamitsu Hayashi , Sinha Jaivardhan , Masaya Kodzuka , Tomoya Nakatani , Yukiko Takahashi , Takao Furubayashi , Seiji Mitani , Kazuhiro Hono
IPC: G11C11/16 , G11B5/66 , G11B5/65 , G11B5/64 , G11B5/73 , G11B5/851 , H01L43/08 , H01L43/10 , H01L43/12 , H01F10/30 , H01F10/32 , C23C14/06 , C23C14/34 , G01R33/00 , G11C11/14 , G01R33/09 , G01R33/12 , H01F10/00
CPC classification number: G11B5/656 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/34 , C23C14/35 , G01R33/00 , G01R33/098 , G01R33/1284 , G11B5/64 , G11B5/732 , G11B5/851 , G11C11/14 , G11C11/161 , H01F10/007 , H01F10/30 , H01F10/3286 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.
Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。
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2.发明授权公开(公告)号：US09336937B2
公开(公告)日：2016-05-10
申请号：US13935095
申请日：2013-07-03
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Yukiko Takahashi , Srinivasan Ananthakrishnan , Varaprasad Bollapragada , Rajanikanth Ammanabrolu , Jaivardhan Sinha , Masamitsu Hayashi , Takao Furubayashi , Shinya Kasai , Shigeyuki Hirayama , Seiji Mitani , Kazuhiro Hono
IPC: H01F10/32 , H01F10/16 , C22C19/07 , G01R33/09 , G01R33/12 , G11C11/16 , H01L43/10 , H01F10/193 , G11B5/31 , G11B5/39 , H01L43/08 , B82Y10/00 , B82Y25/00
CPC classification number: H01F10/16 , B82Y10/00 , B82Y25/00 , C22C19/07 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/313 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/325 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/12611
Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25
Abstract translation: 为了实现具有高性能的自旋电子装置，本发明的目的是提供一种具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 Co2Fe（GaxGe1-x）Heusler合金在0.25
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3.发明申请公开(公告)号：US20150132609A1
公开(公告)日：2015-05-14
申请号：US14367348
申请日：2013-03-22
Applicant: National Institute for Materials Science
Inventor： Masamitsu Hayashi , Sinha Jaivardhan , Masaya Kodzuka , Tomoya Nakatani , Yukiko Takahashi , Takao Furubayashi , Seiji Mitani , Kazuhiro Hono
CPC classification number: G11B5/656 , C23C14/024 , C23C14/0641 , C23C14/081 , C23C14/34 , C23C14/35 , G01R33/00 , G01R33/098 , G01R33/1284 , G11B5/64 , G11B5/732 , G11B5/851 , G11C11/14 , G11C11/161 , H01F10/007 , H01F10/30 , H01F10/3286 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.
Abstract translation: 提供一种其中磁性层具有高的磁各向异性常数和1.5nm以下的厚度的饱和磁化特性的元件结构，以及使用元件结构的磁性器件。 制造使用BCC金属的氮化物作为种子层的BCC金属氮化物/ CoFeB / MgO膜结构。 BCC金属氮化物中的氮化物量优选以基于100％BCC金属的体积比计小于60％。 因此，即使磁性层的厚度为（μm），也可以容易地得到垂直磁各向异性为0.1×10 6Ω/ cm 3以上且磁饱和磁化强度为200emu / cm 3以上的磁特性的垂直磁化膜 0.3nm以上且1.5nm以下。
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公开(公告)号：US20130302649A1
公开(公告)日：2013-11-14
申请号：US13935095
申请日：2013-07-03
Applicant: National Institute for Materials Science
Inventor： Yukiko Takahashi , Srinivasan Ananthakrishnan , Varaprasad Bollapragada , Rajanikanth Ammanabrolu , Jaivardhan Sinha , Masamitsu Hayashi , Takao Furubayashi , Shinya Kasai , Shigeyuki Hirayama , Seiji Mitani , Kazuhiro Hono
CPC classification number: H01F10/16 , B82Y10/00 , B82Y25/00 , C22C19/07 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/313 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/325 , H01F10/329 , H01L43/08 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/12611
Abstract: [Problem to be Solved]To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same.[Solution]A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25
Abstract translation: [待解决的问题]为了实现具有高性能的自旋电子装置，本发明的目的是提供具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 [溶液] Co2Fe（GaxGe1-x）Heusler合金在0.25
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