公开(公告)号：US11261537B2

公开(公告)日：2022-03-01

申请号：US16679832

申请日：2019-11-11

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Bjørn-Ove Fimland ,  Dheeraj L. Dasa ,  Helge Weman

IPC: C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/22 ,  C30B29/02 ,  H01L29/04 ,  H01L29/16

Abstract: A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

公开(公告)号：US11594657B2

公开(公告)日：2023-02-28

申请号：US15744467

申请日：2016-07-13

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dasa L. Dheeraj ,  Dong Chul Kim ,  Bjørn Ove M. Fimland ,  Helge Weman

IPC: H01L31/105 ,  H01L33/08 ,  H01L31/0352 ,  H01L33/24 ,  H01L33/06 ,  H01L33/18 ,  H01L31/103 ,  H01L31/18 ,  H01L33/32

Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

公开(公告)号：US11515688B2

公开(公告)日：2022-11-29

申请号：US16482915

申请日：2018-02-05

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Bjorn Ove Myking Fimland ,  Helge Weman ,  Dingding Ren

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/60 ,  H01S5/343 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/042 ,  H01L29/06

Abstract: A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

公开(公告)号：US11450528B2

公开(公告)日：2022-09-20

申请号：US16456591

申请日：2019-06-28

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie Høiaas ,  Mazid Munshi ,  Bjørn Ove Fimland ,  Helge Weman ,  Dingding Ren ,  Dasa Dheeraj

IPC: H01L21/02

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

公开(公告)号：US10714337B2

公开(公告)日：2020-07-14

申请号：US15749228

申请日：2016-08-01

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie Høiaas ,  Mazid Munshi ,  Bjørn Ove Fimland ,  Helge Weman ,  Dingding Ren ,  Dasa Dheeraj

IPC: H01L21/02

Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

公开(公告)号：US10347791B2

公开(公告)日：2019-07-09

申请号：US15744457

申请日：2016-07-13

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie E. Høiaas ,  Carl Philip J. Heimdal ,  Bjørn Ove M. Fimland ,  Helge Weman

IPC: H01L31/00 ,  H01L33/00 ,  H01L33/08 ,  H01L31/0352 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/06

Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

公开(公告)号：US20150194549A1

公开(公告)日：2015-07-09

申请号：US14409837

申请日：2013-06-21

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Helge Weman ,  Bjørn-Ove Fimland ,  Dong Chul Kim

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/035227 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1852

Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

Abstract translation: 物质的组合物，特别是光伏电池，包括：在石墨基底上的至少一个核半导体纳米线，所述至少一个核心纳米线已经在所述基底上外延生长，其中所述纳米线包含至少一种III-V族化合物或 至少一种II-VI族化合物或至少一种IV族元素; 围绕所述芯纳米线的半导体外壳，所述壳包含至少一种III-V族化合物或至少一种II-VI族化合物或至少一种IV族元素，使得所述核心纳米线和所述壳形成n型半导体， 分别为p型半导体，反之亦然; 以及围绕所述外壳的外导电涂层，其形成电极接触。

公开(公告)号：US11264536B2

公开(公告)日：2022-03-01

申请号：US16504862

申请日：2019-07-08

Applicant: CRAYONANO AS ,  NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Dong Chul Kim ,  Ida Marie E. Høiaas ,  Carl Philip J. Heimdal ,  Bjørn Ove M. Fimland ,  Helge Weman

IPC: H01L33/08 ,  H01L31/18 ,  H01L51/00 ,  H01L31/0352 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44 ,  H01L33/06 ,  H01L51/42

Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.

公开(公告)号：US11239391B2

公开(公告)日：2022-02-01

申请号：US16604397

申请日：2018-04-10

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Bjørn Ove Myking Fimland ,  Helge Weman ,  Dingding Ren

IPC: H01L33/30 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24

Abstract: A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped β-Ga2O3 substrate, wherein said nanostructure comprises at least one group III-V compound.

公开(公告)号：US10472734B2

公开(公告)日：2019-11-12

申请号：US14900267

申请日：2014-06-23

Applicant: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

Inventor： Bjørn-Ove Fimland ,  Dheeraj L. Dasa ,  Helge Weman

IPC: C30B25/10 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/02 ,  H01L29/04 ,  H01L29/15 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  C30B29/48

Abstract: A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.