公开(公告)号：US4982138A

公开(公告)日：1991-01-01

申请号：US277640

申请日：1988-11-29

申请人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

发明人： Nobuo Fujiwara ,  Kenji Kawai ,  Moriaki Akazawa ,  Teruo Shibano ,  Tomoaki Ishida ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32678

摘要： A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

摘要翻译： 利用由电子回旋共振（ECR）引起的气体放电产生的等离子体的晶片处理装置包括晶片处理室和等离子体发生室，用于向等离子体发生室供给微波能量的微波电源和围绕 该等离子体产生室在其中产生最小的B场。 通过电子回旋共振在等离子体发生室中产生的等离子体由线圈产生的最小B场稳定地限制在其中。 因此，提高等离子体发生室中的等离子体的密度和稳定性。 等离子体发生室中的等离子体沿着磁力的发散线被输送到晶片处理室中的晶片。 最小B场产生线圈的实例包括Ioffe棒，棒球线圈和阴阳线圈。

公开(公告)号：US4915979A

公开(公告)日：1990-04-10

申请号：US279016

申请日：1988-12-02

申请人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

发明人： Tomoaki Ishida ,  Nobuo Fujiwara ,  Kyusaku Nishioka ,  Moriaki Akazawa ,  Teruo Shibano ,  Kenji Kawai

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32357

摘要： A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的气体等离子体的半导体晶片处理装置，包括晶片处理室和与晶片处理室连通的等离子体产生室。 将频率不大于2GHz且不小于100MHz的微波能量提供给由螺线管线圈包围的等离子体发生室，并在等离子体发生室和晶片处理室中产生磁场以产生ECR 并将由ECR产生的等离子体输送到晶片。 因此，优化了在等离子体发生室中的电子回旋共振中在螺旋路径中移动的电子的拉莫半径使得等离子体在空间上均匀。 因此，提高了晶片上的处理的均匀性。

公开(公告)号：US4877509A

公开(公告)日：1989-10-31

申请号：US269688

申请日：1988-11-10

申请人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

发明人： Toshiaki Ogawa ,  Nobuo Fujiwara ,  Kenji Kawai ,  Teruo Shibano ,  Hiroshi Morita ,  Kyusaku Nishioka

IPC分类号： H01L21/302 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32293 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678

摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.

摘要翻译： 公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

公开(公告)号：US5474615A

公开(公告)日：1995-12-12

申请号：US993514

申请日：1992-12-17

申请人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

发明人： Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C03C15/00

CPC分类号： H01L21/02046 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/67028 ,  Y10S438/963

摘要： A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active. Accordingly, a velocity vector in a horizontal direction of the reactive ions becomes larger, which enables efficient removal or change in quality of the contaminants sticking on the sidewalls of the pattern or the trench.

摘要翻译： 公开了一种清洁半导体器件的方法，该半导体器件去除或转移粘附在图案或沟槽的侧壁上的污染物。 在其上形成图案或沟槽的被处理基板位于处理容器中。 与粘附在图案或沟槽的侧壁上的污染物反应以产生去除或改变污染物的活性离子的反应气体被引入处理容器中。 反应气体的等离子体通过电子回旋共振产生，以便从引入处理容器的反应气体产生活性离子。 根据该方法，等离子体中的反应离子的温度变高，结果是等离子体中的活性离子的运动变得更加活跃。 因此，反应离子的水平方向的速度矢量变大，能够有效地去除或污染物附着在图案或沟槽的侧壁上的质量的变化。

公开(公告)号：US5306671A

公开(公告)日：1994-04-26

申请号：US718674

申请日：1991-06-21

申请人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

发明人： Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai ,  Moriaki Akazawa

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/3065 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28167 ,  Y10S438/906 ,  Y10S438/974

摘要： A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

摘要翻译： 本发明的主要特征是清洁半导体衬底的表面，而不会在其表面上提供损伤层。 通过使用含氟气体的等离子体蚀刻在硅衬底的表面上形成的自然氧化膜。 通过使用含氟气体以除去在上述等离子体蚀刻步骤中形成的表面损伤层和碳氟化合物层，再次对半导体衬底的表面进行等离子体蚀刻。 半导体衬底表面在低压下用紫外线照射，以便在后一等离子体蚀刻时解离和去除化学吸附到半导体衬底表面上的氟原子。

公开(公告)号：US5223085A

公开(公告)日：1993-06-29

申请号：US653634

申请日：1991-02-12

申请人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

发明人： Kenji Kawai ,  Moriaki Akazawa ,  Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  C23F4/00 ,  H01L21/32136

摘要： A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

摘要翻译： 公开了一种通过电子回旋共振产生的反应气体的等离子体各向异性蚀刻待处理的基板的方法。 待处理的基板位于处理容器中，并且将氯气和氯化氢气体引入处理容器中。 从引入处理容器的氯气和氯化氢气体的混合物中，通过电子回旋共振产生混合气体的等离子体。 根据这种方法，氯的等离子体的能量由H +的等离子体摄取，这导致氯的动能降低。 结果，氯的等离子体沿护套电场垂直地撞击待处理的基板。 因此，能够进行强烈的各向异性特性的蚀刻。

公开(公告)号：US5147465A

公开(公告)日：1992-09-15

申请号：US605427

申请日：1990-10-30

申请人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

发明人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  B08B7/0035 ,  H01J37/32357

摘要： A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.

摘要翻译： 一种清洁表面的方法，包括通过激发氦气产生氦离子，电子和亚稳态氦，将所述亚稳态氦与氦离子和电子分离，并将待处理物质暴露于其外部物质的表面上 从氦离子和电子分离的亚稳态氦从物质中除去异物。

公开(公告)号：US5318654A

公开(公告)日：1994-06-07

申请号：US893832

申请日：1992-06-04

申请人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

发明人： Takahiro Maruyama ,  Toshiaki Ogawa ,  Hiroshi Morita ,  Tomoaki Ishida ,  Kenji Kawai

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/3065

CPC分类号： H01L21/67028 ,  B08B7/0035 ,  H01J37/32357

摘要： An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

摘要翻译： 一种用于清洁表面的设备包括第一和第二反应容器，用于在第二反应容器中保持在其表面存在异物的待处理物质的保持装置，用于向第一反应中供应氦气的装置 容器，用于通过在第一反应容器中激发氦气产生氦离子，电子和亚稳态氦的装置，以及用于分离在第一反应容器中产生的亚稳态氦并将亚稳态氦引入第二反应容器的装置。

公开(公告)号：US5435886A

公开(公告)日：1995-07-25

申请号：US247405

申请日：1994-05-23

申请人： Nobuo Fujiwara ,  Takahiro Maruyama ,  Kenji Kawai ,  Takahiro Hoshiko

发明人： Nobuo Fujiwara ,  Takahiro Maruyama ,  Kenji Kawai ,  Takahiro Hoshiko

IPC分类号： C23F4/00 ,  H01J37/02 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/026 ,  H01J37/32192 ,  H01J37/32678 ,  H01J37/32706 ,  H01J2237/0044 ,  H01J2237/3347

摘要： A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.

摘要翻译： 一种电子回旋共振等离子体蚀刻方法，其包括通过向所述腔室连续供给微波能量并向所述半导体晶片施加脉冲直流偏压，在包含半导体晶片的腔室中的气体中产生恒定的等离子体，其中所述脉冲偏压具有周期 基本上等于由半导体晶片的电容和离子鞘在半导体晶片表面的电阻确定的时间常数。

公开(公告)号：US09065314B2

公开(公告)日：2015-06-23

申请号：US13595029

申请日：2012-08-27

申请人： Yohei Arimatsu ,  Kenji Kawai

发明人： Yohei Arimatsu ,  Kenji Kawai

IPC分类号： H02K1/27

CPC分类号： H02K1/276 ,  H02K2213/03

摘要： A rotor (10) of a buried magnet-type electric motor, wherein the magnetic poles thereof are each constituted by two rows of magnets (M1, M2) of the same pole, wherein a core portion (12) between magnet slots of the same pole is arranged between the magnet slots (31, 32) in which the two rows of magnets are arranged, and wherein, of the edges constituting said magnet slots, the portions connecting the edges (31a, 32a) on the inner side in the radial direction to the outer edges of the core portion between the magnet slots of the same pole, have curved portions (41, 42) that connect a curve of a small curvature to a curve of a large curvature starting from the edges on the inner side in the radial direction and heading toward the outer edges of the core portion between the magnet slots of the same pole.

摘要翻译： 一种埋地磁铁式电动机的转子（10），其磁极分别由同一极的两排磁体（M1，M2）构成，其中，在相同极的磁体槽之间的芯部（12） 在排列有两列磁体的磁体槽（31,32）之间布置有磁极，并且其中，在构成所述磁体槽的边缘之间，将径向内侧的边缘（31a，32a） 在相同极的磁体槽之间的芯部的外缘的方向具有弯曲部分（41,42），其将小曲率的曲线连接到从内侧的边缘开始的大曲率的曲线 径向并朝着同一极的磁体槽之间的芯部分的外边缘前进。