公开(公告)号：US10297627B1

公开(公告)日：2019-05-21

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

公开(公告)号：US09564470B1

公开(公告)日：2017-02-07

申请号：US15272164

申请日：2016-09-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of dielectric material is disposed between the layer of gate material and a semiconductor material, and the layer of gate material is disposed between the layer of hard mask material and the layer of dielectric material. The method also includes etching the layer of hard mask material and layer of gate material, and etching forms a transfer gate from the layer of gate material. An encapsulation material is deposited proximate to a surface of the semiconductor material. Trenches are etched in the encapsulation material. A first trench extends through the encapsulation material and the layer of dielectric material, and a second trench extends through the encapsulation material and the layer of hard mask material.

Abstract translation: 图像传感器制造的方法包括形成介电材料层，栅极材料层和硬掩模材料层。 介电材料层设置在栅极材料层和半导体材料之间，并且栅极材料层设置在硬掩模材料层和电介质材料层之间。 该方法还包括蚀刻硬掩模材料层和栅极材料层，并且蚀刻从栅极材料层形成传输栅极。 封装材料沉积在半导体材料的表面附近。 在封装材料中蚀刻沟槽。 第一沟槽延伸穿过封装材料和介电材料层，并且第二沟槽延伸穿过封装材料和硬掩模材料层。

公开(公告)号：US20200099878A1

公开(公告)日：2020-03-26

申请号：US16141584

申请日：2018-09-25

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

IPC: H04N5/376 ,  H01L27/146 ,  H04N5/378

Abstract: An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; and the third transfer region is proximate to the third charge storage node and configured to have a third transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential. Charges are fully transferred from the first charge storage node to the second charge storage node after a plurality of transfer signal pulses.

公开(公告)号：US10181490B2

公开(公告)日：2019-01-15

申请号：US15478085

申请日：2017-04-03

Applicant: OmniVision Technologies, Inc.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

公开(公告)号：US09991309B1

公开(公告)日：2018-06-05

申请号：US15642177

申请日：2017-07-05

Applicant: OmniVision Technologies, Inc.

Inventor： Cunyu Yang ,  Cheng Zhao ,  Gang Chen ,  Dyson Tai ,  Chen-Wei Lu

IPC: H04N5/33 ,  H04N5/335 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H04N5/332 ,  H04N5/335 ,  H04N5/3745

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; a near infrared (NIR) quantum efficiency (QE) enhancement structure comprising at least two NIR QE enhancement elements within a region of the photodiode, wherein the NIR QE enhancement structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve an optical sensitivity, including near-infrared light sensitivity, of the image sensor.

公开(公告)号：US20150295007A1

公开(公告)日：2015-10-15

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US20190355778A1

公开(公告)日：2019-11-21

申请号：US15984136

申请日：2018-05-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/359

Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

公开(公告)号：US20190115388A1

公开(公告)日：2019-04-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

公开(公告)号：US20180366513A1

公开(公告)日：2018-12-20

申请号：US15628304

申请日：2017-06-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao ,  Xianfu Cheng ,  Xin Wang ,  Bill Phan ,  Dyson Tai

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14831 ,  H01L27/14621 ,  H01L27/14868 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

公开(公告)号：US20170221951A1

公开(公告)日：2017-08-03

申请号：US15014787

申请日：2016-02-03

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.