公开(公告)号：US20160099266A1

公开(公告)日：2016-04-07

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

公开(公告)号：US20150318327A1

公开(公告)日：2015-11-05

申请号：US14270309

申请日：2014-05-05

Applicant: OmniVision Technologies, Inc.

Inventor： Wei Zheng ,  Dyson Hsin-Chih Tai ,  Vincent Venezia

IPC: H01L27/146 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/762 ,  H01L21/76224 ,  H01L21/76829 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.

Abstract translation: 一种用于制造背面照明彩色图像传感器的方法包括：（a）修改具有像素阵列的图像传感器晶片的前侧以产生与像素阵列的电连接，其中电连接从图像传感器晶片向深度方向延伸到图像传感器晶片中 （b）修改图像传感器晶片的背面以暴露电连接。

公开(公告)号：US08759934B2

公开(公告)日：2014-06-24

申请号：US13649953

申请日：2012-10-11

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US08729712B2

公开(公告)日：2014-05-20

申请号：US14052944

申请日：2013-10-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson H. Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L21/00

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US20130032921A1

公开(公告)日：2013-02-07

申请号：US13649953

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US20190115388A1

公开(公告)日：2019-04-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

公开(公告)号：US20140035089A1

公开(公告)日：2014-02-06

申请号：US14052944

申请日：2013-10-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson H. Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

Abstract translation: 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US09520431B2

公开(公告)日：2016-12-13

申请号：US14505923

申请日：2014-10-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

Abstract translation: 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

公开(公告)号：US09360607B1

公开(公告)日：2016-06-07

申请号：US14597821

申请日：2015-01-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Wei Zheng ,  Yin Qian ,  Chen-Wei Lu ,  Jin Li

IPC: H04N5/335 ,  G02B5/20 ,  H04N9/04 ,  G02B5/22 ,  H04N5/353 ,  H04N5/378

CPC classification number: G02B5/201 ,  G02B5/22 ,  G02B5/24 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/3532 ,  H04N5/378 ,  H04N9/045

Abstract: A color filter array for use on a color image sensor includes an oxide grid having sidewalls arranged to define openings in the oxide grid. Each one of the openings is to be disposed over a corresponding pixel cell of the color image sensor. Oxide support structures are disposed in an interior region of each opening in the oxide grid over a corresponding pixel cell of the color image sensor. The openings in the oxide grid are filled with color filter material of a corresponding color filter. A surface tension between each oxide support structure and the surrounding color filter material of the color filter is adapted to provide uniform thickness for the color filters within the corresponding openings in the oxide grid.

Abstract translation: 用于彩色图像传感器的滤色器阵列包括具有设置成在氧化物栅格中限定开口的侧壁的氧化物栅格。 开口中的每一个将被布置在彩色图像传感器的相应像素单元上。 氧化物支撑结构设置在彩色图像传感器的相应像素单元上的氧化物网格中的每个开口的内部区域中。 氧化物网格中的开口用相应滤色器的滤色器材料填充。 每个氧化物载体结构和滤色器的周围滤色器材料之间的表面张力适于为氧化物网格中的相应开口内的滤色器提供均匀的厚度。

公开(公告)号：US10566380B2

公开(公告)日：2020-02-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.